公开(公告)号：US20070075349A1

公开(公告)日：2007-04-05

申请号：US11591254

申请日：2006-10-31

申请人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

发明人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

公开(公告)号：US20070069270A1

公开(公告)日：2007-03-29

申请号：US11398498

申请日：2006-04-04

申请人： Cem Basceri ,  Howard Rhodes ,  Gurtej Sandhu ,  F. Gealy ,  Thomas Graettinger

发明人： Cem Basceri ,  Howard Rhodes ,  Gurtej Sandhu ,  F. Gealy ,  Thomas Graettinger

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L21/31691 ,  H01L23/5222 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

公开(公告)号：US20060001161A1

公开(公告)日：2006-01-05

申请号：US11215238

申请日：2005-08-30

申请人： Thomas Graettinger ,  F. Gealy

发明人： Thomas Graettinger ,  F. Gealy

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/7687 ,  H01L21/28518 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

公开(公告)号：US20050104111A1

公开(公告)日：2005-05-19

申请号：US11015689

申请日：2004-12-17

申请人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

发明人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

IPC分类号： H01L21/02 ,  H01L21/334 ,  H01L21/4763 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

公开(公告)号：US20050014328A1

公开(公告)日：2005-01-20

申请号：US10920840

申请日：2004-08-18

申请人： Thomas Graettinger ,  F. Gealy

发明人： Thomas Graettinger ,  F. Gealy

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L21/8238

CPC分类号： H01L21/7687 ,  H01L21/28518 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

摘要翻译： 电触点包括围绕接触的整个高度的导电插塞材料的非导电间隔物。 间隔物通过接触体阻止氧化物和其它扩散。 在所示实施例中，触点包括耐氧化的金属或金属氧化物，以及附加的导电阻挡层。 该接触在包括高介电常数材料的集成电路中特别有用。

公开(公告)号：US20060120019A1

公开(公告)日：2006-06-08

申请号：US11326018

申请日：2006-01-05

申请人： F. Gealy ,  Thomas Graettinger

发明人： F. Gealy ,  Thomas Graettinger

IPC分类号： H01G4/228

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a capacitor are disclosed. The methods may comprise the steps of forming a substrate assembly and forming a first electrode on the substrate assembly. The first electrode may be formed to include at least one non-smooth surface and may be formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The methods may also comprise the step of forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric. The second electrode may be formed to include at least one non-smooth surface. Also, the dielectric and the second electrode may be formed only within the first electrode.

摘要翻译： 公开了形成电容器的方法。 该方法可以包括形成衬底组件并在衬底组件上形成第一电极的步骤。 第一电极可以形成为包括至少一个非光滑表面，并且可以由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 所述方法还可以包括在所述第一电极和所述基板组件的最上表面上形成电介质的步骤，以及在所述电介质上形成第二电极。 第二电极可以形成为包括至少一个非光滑表面。 此外，电介质和第二电极可以仅形成在第一电极内。

公开(公告)号：US20060097348A1

公开(公告)日：2006-05-11

申请号：US11315638

申请日：2005-12-22

申请人： F. Gealy ,  Thomas Graettinger

发明人： F. Gealy ,  Thomas Graettinger

IPC分类号： H01L29/00 ,  H01L29/94

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： Structures having an electrode formed from a transition metal or a conductive metal oxide are disclosed. The structures may comprise a first electrode made of a material selected from the group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof The first electrode may comprise a first non-smooth surface, and the first non-smooth surface may comprise a concave hemispherical grain. The structures may also comprise a dielectric in contact with the first electrode and a surface of a substrate assembly.

摘要翻译： 公开了具有由过渡金属或导电金属氧化物形成的电极的结构。 所述结构可以包括由选自过渡金属，导电金属氧化物，其合金及其组合的材料制成的第一电极。第一电极可以包括第一非光滑表面，并且第一非光滑表面 可以包括凹的半球形颗粒。 该结构还可以包括与第一电极和衬底组件的表面接触的电介质。

公开(公告)号：US20050227003A1

公开(公告)日：2005-10-13

申请号：US10822016

申请日：2004-04-08

申请人： Chris Carlson ,  Vishwanath Bhat ,  F. Gealy

发明人： Chris Carlson ,  Vishwanath Bhat ,  F. Gealy

IPC分类号： B05D5/12 ,  C23C16/00 ,  C23C16/40

CPC分类号： C23C16/45531 ,  C23C16/40

摘要： The invention includes ALD-type methods in which two or more different precursors are provided within a chamber at different and substantially non-overlapping times relative to one another to form a material, and the material is thereafter exposed to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.

摘要翻译： 本发明包括ALD型方法，其中两个或多个不同的前体在腔室内以相对于彼此的不同和基本上不重叠的时间提供以形成材料，然后将材料暴露于一种或多种反应物以改变 材料的组成。 在特定方面，用于形成材料的前体是含金属的前体，用于改变材料组成的反应物包括氧，硅和/或氮。

公开(公告)号：US20050032302A1

公开(公告)日：2005-02-10

申请号：US10636035

申请日：2003-08-06

申请人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

发明人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

IPC分类号： H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8234

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给到导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

公开(公告)号：US20060251813A1

公开(公告)日：2006-11-09

申请号：US11485658

申请日：2006-07-12

申请人： Chris Carlson ,  Vishwanath Bhat ,  F. Gealy

发明人： Chris Carlson ,  Vishwanath Bhat ,  F. Gealy

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/40

摘要： The invention includes ALD-type methods in which two or more different precursors are provided within a chamber at different and substantially non-overlapping times relative to one another to form a material, and the material is thereafter exposed to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.

摘要翻译： 本发明包括ALD型方法，其中两个或多个不同的前体在腔室内以相对于彼此的不同和基本上不重叠的时间提供以形成材料，然后将材料暴露于一种或多种反应物以改变 材料的组成。 在特定方面，用于形成材料的前体是含金属的前体，用于改变材料组成的反应物包括氧，硅和/或氮。