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    Quantum dot transistor
    1.
    发明授权
    Quantum dot transistor 有权
    量子点晶体管

    公开(公告)号：US08278647B2

    公开(公告)日：2012-10-02

    申请号：US12657225

    申请日：2010-01-15

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Xu Tian

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Xu Tian

    IPC分类号： H01L29/06

    CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/107 ,  H01L29/127 ,  H01L29/7888 ,  H01L49/006

    摘要： One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between the source/drain electrodes and the quantum dot (or dots) by tunneling through the insulating layer. Quantum dot energy levels can be controlled with one or more gate electrodes capacitively coupled to some or all of the quantum dot(s). Current can flow between source and drain if a quantum dot energy level is aligned with the energy of incident tunneling electrons. Current flow between source and drain is inhibited if no quantum dot energy level is aligned with the energy of incident tunneling electrons. Here energy level alignment is understood to have a margin of about the thermal energy (e.g., 26 meV at room temperature).

    摘要翻译： 一个或多个量子点用于控制晶体管中的电流。 代替设置在源极和漏极之间的沟道中，量子点（或点）通过绝缘层与源极和漏极垂直分离。 通过穿过绝缘层，电流可以在源/漏电极和量子点（或点）之间隧穿。 可以通过电容耦合到一些或全部量子点的一个或多个栅电极来控制量子点能级。 如果量子点能级与入射隧道电子的能量对准，电流可以在源极和漏极之间流动。 如果没有量子点能级与入射隧道电子的能量对准，则源极和漏极之间的电流将被抑制。 这里，能级对准被理解为具有大约热能的余量（例如，在室温下为26meV）。

    Quantum dot transistor
    2.
    发明申请
    Quantum dot transistor 有权
    量子点晶体管

    公开(公告)号：US20100181551A1

    公开(公告)日：2010-07-22

    申请号：US12657225

    申请日：2010-01-15

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Xu Tian

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Xu Tian

    IPC分类号： H01L29/772

    CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/107 ,  H01L29/127 ,  H01L29/7888 ,  H01L49/006

    摘要： One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between the source/drain electrodes and the quantum dot (or dots) by tunneling through the insulating layer. Quantum dot energy levels can be controlled with one or more gate electrodes capacitively coupled to some or all of the quantum dot(s). Current can flow between source and drain if a quantum dot energy level is aligned with the energy of incident tunneling electrons. Current flow between source and drain is inhibited if no quantum dot energy level is aligned with the energy of incident tunneling electrons. Here energy level alignment is understood to have a margin of about the thermal energy (e.g., 26 meV at room temperature).

    摘要翻译： 一个或多个量子点用于控制晶体管中的电流。 代替设置在源极和漏极之间的沟道中，量子点（或点）通过绝缘层与源极和漏极垂直分离。 通过穿过绝缘层，电流可以在源/漏电极和量子点（或点）之间隧穿。 可以通过电容耦合到一些或全部量子点的一个或多个栅电极来控制量子点能级。 如果量子点能级与入射隧道电子的能量对准，电流可以在源极和漏极之间流动。 如果没有量子点能级与入射隧道电子的能量对准，则源极和漏极之间的电流将被抑制。 这里，能级对准被理解为具有大约热能的余量（例如，在室温下为26meV）。

    Field-aided preferential deposition of precursors
    3.
    发明授权
    Field-aided preferential deposition of precursors 失效
    现场辅助优先沉积前体

    公开(公告)号：US08496999B2

    公开(公告)日：2013-07-30

    申请号：US12383588

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    IPC分类号： C23C16/02

    CPC分类号： C23C16/047 ,  C23C16/45536 ,  C23C16/45544 ,  G01Q30/02 ,  G01Q80/00

    摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

    摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。

    Quantum dot ultracapacitor and electron battery
    4.
    发明申请
    Quantum dot ultracapacitor and electron battery 有权
    量子点超级电容器和电子电池

    公开(公告)号：US20100183919A1

    公开(公告)日：2010-07-22

    申请号：US12657198

    申请日：2010-01-15

    申请人： Timothy P. Holme ,  Friedrich B. Prinz

    发明人： Timothy P. Holme ,  Friedrich B. Prinz

    IPC分类号： H01M4/02

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L28/40 ,  H01L29/127

    摘要： The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

    摘要翻译： 本发明提供一种具有至少一个量子限制物质（QCS）的固态储能装置，其中QCS可以包括量子点（QD），量子阱或纳米线。 本发明还包括至少一层电介质材料，其中结合有至少一个QCS，以及设置在电介质材料的至少一层的顶表面上的第一导电电极，第二导电电极设置在 所述至少一层介电材料的底表面，其中所述第一电极和所述第二电极被设置成将电荷转移到所述至少一个QCS，其中当设置电路以在所述第一电极上提供电位时 和所述第二电极，所述电位将所传送的电荷从所述至少一个QCS放电至所述电路。

    Quantum dot solar cell with quantum dot bandgap gradients
    5.
    发明申请
    Quantum dot solar cell with quantum dot bandgap gradients 有权
    量子点带隙量子点太阳能电池

    公开(公告)号：US20090255580A1

    公开(公告)日：2009-10-15

    申请号：US12383584

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0384

    摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.

    摘要翻译： 提供了带有量子点的高效光伏器件。 量子点具有许多可用于太阳能电池的理想特性，包括容易选择的带隙和费米能级。 特别地，量子点的尺寸和组成可以确定其带隙和费米能级。 通过在太阳能电池的有源层中精确沉积量子点，可以存在带隙梯度以有效的阳光吸收，激子解离和电荷传输。 不匹配费米等级也存在于相邻量子点之间，允许内置的电场形成并有助于电荷传输和预防激子重组。

    Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor
    6.
    发明申请
    Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor 有权
    通过正丙基四甲基环戊二烯基前体原子层沉积氧化锶

    公开(公告)号：US20080242111A1

    公开(公告)日：2008-10-02

    申请号：US12070376

    申请日：2008-02-14

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： C23C16/06 ,  H01L21/314

    CPC分类号： C23C16/30 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/3141

    摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

    摘要翻译： 提供了一种在衬底上沉积氧化物材料的方法。 沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。 将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。 氧化剂被提供到室，其中氧化剂具有源流速。 水被提供到室，其中水具有源温度。 通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。 可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

    Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures
    10.
    发明申请
    Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures 有权
    原子力显微镜辅助沉积纳米结构原型站

    公开(公告)号：US20120284882A1

    公开(公告)日：2012-11-08

    申请号：US13548845

    申请日：2012-07-13

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrel Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrel Iancu ,  Wonyoung Lee

    IPC分类号： G01Q60/10 ,  G01Q60/24 ,  G01Q60/00

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。