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32 条记录 (耗时 0.019 秒)

    Prototyping station for atomic force microscope-assisted deposition of nanostructures
    1.
    发明授权
    Prototyping station for atomic force microscope-assisted deposition of nanostructures 失效
    原子力显微镜辅助沉积纳米结构原型台

    公开(公告)号：US08296859B2

    公开(公告)日：2012-10-23

    申请号：US12383467

    申请日：2009-03-23

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    IPC分类号： G01N13/10

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

    Prototyping station for atomic force microscope-assisted deposition of nanostructures
    3.
    发明申请
    Prototyping station for atomic force microscope-assisted deposition of nanostructures 失效
    原子力显微镜辅助沉积纳米结构原型台

    公开(公告)号：US20090241232A1

    公开(公告)日：2009-09-24

    申请号：US12383467

    申请日：2009-03-23

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    IPC分类号： G12B21/04 ,  G12B21/08

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

    Energy storage device with large charge separation
    5.
    发明申请
    Energy storage device with large charge separation 有权
    储能装置具有较大的电荷分离

    公开(公告)号：US20120313589A1

    公开(公告)日：2012-12-13

    申请号：US13135798

    申请日：2011-07-13

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu

    IPC分类号： H01M10/36 ,  H02J7/00

    CPC分类号： H01L29/92 ,  H01G7/06 ,  H01L33/0008 ,  Y02T10/7022

    摘要： High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

    摘要翻译： 提供半导体器件中的高密度能量存储。 目前的方法有两个主要方面。 第一方面是基于在半导体中形成等离子体来在半导体器件中提供高密度能量存储。 第二方面是提供基于p-n结中的电荷分离的高密度能量存储。

    Modifying catalytic behavior of nanocrystals
    7.
    发明授权
    Modifying catalytic behavior of nanocrystals 有权
    改性纳米晶体的催化行为

    公开(公告)号：US08247318B2

    公开(公告)日：2012-08-21

    申请号：US12657580

    申请日：2010-01-21

    申请人： Timothy P. Holme ,  Friedrich B. Prinz

    发明人： Timothy P. Holme ,  Friedrich B. Prinz

    IPC分类号： H01L21/04

    CPC分类号： B82Y30/00 ,  B01J23/42 ,  B01J23/52 ,  B01J31/2234 ,  B01J31/2295 ,  B01J35/0013 ,  B01J35/002 ,  B01J2531/0211 ,  B01J2531/18 ,  B01J2531/828

    摘要： The present invention provides a method of providing a desired catalyst electron energy level. The method includes providing a donor material quantum confinement structure (QCS) having a first Fermi level, and providing an acceptor QCS material having a second Fermi level, where the first Fermi level is higher than the second Fermi level. According to the method the acceptor is disposed proximal to the donor to alter an electronic structure of the donor and the acceptor materials to provide the desired catalyst electron energy level.

    摘要翻译： 本发明提供了提供所需催化剂电子能级的方法。 该方法包括提供具有第一费米能级的施主材料量子限制结构（QCS），以及提供具有第二费米能级的受体QCS材料，其中第一费米能级高于第二费米能级。 根据该方法，将受体放置在供体附近，以改变供体的电子结构和受体材料以提供所需的催化剂电子能级。

    Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor
    8.
    发明授权
    Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor 有权
    通过N-丙基四甲基环戊二烯基前体原子层沉积氧化锶

    公开(公告)号：US07790629B2

    公开(公告)日：2010-09-07

    申请号：US12070376

    申请日：2008-02-14

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： H01L21/31

    CPC分类号： C23C16/30 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/3141

    摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

    摘要翻译： 提供了一种在衬底上沉积氧化物材料的方法。 沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。 将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。 氧化剂被提供到室，其中氧化剂具有源流速。 水被提供到室，其中水具有源温度。 通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。 可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

    Field-aided preferential deposition of precursors
    9.
    发明授权
    Field-aided preferential deposition of precursors 失效
    现场辅助优先沉积前体

    公开(公告)号：US08496999B2

    公开(公告)日：2013-07-30

    申请号：US12383588

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    IPC分类号： C23C16/02

    CPC分类号： C23C16/047 ,  C23C16/45536 ,  C23C16/45544 ,  G01Q30/02 ,  G01Q80/00

    摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

    摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。

    Quantum dot ultracapacitor and electron battery
    10.
    发明申请
    Quantum dot ultracapacitor and electron battery 有权
    量子点超级电容器和电子电池

    公开(公告)号：US20100183919A1

    公开(公告)日：2010-07-22

    申请号：US12657198

    申请日：2010-01-15

    申请人： Timothy P. Holme ,  Friedrich B. Prinz

    发明人： Timothy P. Holme ,  Friedrich B. Prinz

    IPC分类号： H01M4/02

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L28/40 ,  H01L29/127

    摘要： The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

    摘要翻译： 本发明提供一种具有至少一个量子限制物质（QCS）的固态储能装置，其中QCS可以包括量子点（QD），量子阱或纳米线。 本发明还包括至少一层电介质材料，其中结合有至少一个QCS，以及设置在电介质材料的至少一层的顶表面上的第一导电电极，第二导电电极设置在 所述至少一层介电材料的底表面，其中所述第一电极和所述第二电极被设置成将电荷转移到所述至少一个QCS，其中当设置电路以在所述第一电极上提供电位时 和所述第二电极，所述电位将所传送的电荷从所述至少一个QCS放电至所述电路。