公开(公告)号：US20120280263A1

公开(公告)日：2012-11-08

申请号：US13415626

申请日：2012-03-08

申请人： James Ibbetson ,  Ting Li ,  Bernd Keller

发明人： James Ibbetson ,  Ting Li ,  Bernd Keller

IPC分类号： H01L33/60 ,  H01L33/48

CPC分类号： H01L33/46 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/48 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.

摘要翻译： 一种具有与所述LED或封装集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。 复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。 在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

公开(公告)号：US20050184307A1

公开(公告)日：2005-08-25

申请号：US10676953

申请日：2003-09-30

申请人： Ting Li ,  James Ibbetson ,  Bernd Keller

发明人： Ting Li ,  James Ibbetson ,  Bernd Keller

IPC分类号： H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L2224/16245 ,  H01L2924/10158

摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

摘要翻译： 一种用于在半导体材料的表面上形成多孔层的方法和装置，其中提供电解质并与半导体材料层的一个或多个表面接触。 电解质被加热并且跨越所述电解质和半导体材料引入偏压，导致电流在电解质和半导体材料之间流动。 电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。 具有多孔层的半导体材料可以用作发光体的基板。 可以在衬底上形成半导体发射区域。 发射区域能够响应于偏压而全向发光，多孔层增强了通过衬底的发射区域光的提取。

公开(公告)号：US08680556B2

公开(公告)日：2014-03-25

申请号：US13415626

申请日：2012-03-08

申请人： James Ibbetson ,  Ting Li ,  Bernd Keller

发明人： James Ibbetson ,  Ting Li ,  Bernd Keller

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/46 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/48 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.

摘要翻译： 一种具有与所述LED或封装集成的复合高反射率层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。 复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。 在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

公开(公告)号：US06972438B2

公开(公告)日：2005-12-06

申请号：US10676953

申请日：2003-09-30

申请人： Ting Li ,  James Ibbetson ,  Bernd Keller

发明人： Ting Li ,  James Ibbetson ,  Bernd Keller

IPC分类号： H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L2224/16245 ,  H01L2924/10158

摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

摘要翻译： 一种在半导体材料的表面上形成多孔层的方法和装置，其中提供电解质并与半导体材料层的一个或多个表面接触。 电解质被加热并且跨越所述电解质和半导体材料引入偏压，导致电流在电解质和半导体材料之间流动。 电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。 具有多孔层的半导体材料可以用作发光体的基板。 可以在衬底上形成半导体发射区域。 发射区域能够响应于偏压而全向发光，多孔层增强了通过衬底的发射区域光的提取。

公开(公告)号：US08617909B2

公开(公告)日：2013-12-31

申请号：US12384277

申请日：2009-04-01

申请人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

发明人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

摘要： The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

公开(公告)号：US20100140637A1

公开(公告)日：2010-06-10

申请号：US12329722

申请日：2008-12-08

申请人： Matthew Donofrio ,  John Edmond ,  James Ibbetson ,  Ting Li

发明人： Matthew Donofrio ,  John Edmond ,  James Ibbetson ,  Ting Li

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/38 ,  H01L33/145 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.

摘要翻译： 公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。 透明导电氧化物层具有比所述活性结构更大的占地面积。 电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。

公开(公告)号：US09362459B2

公开(公告)日：2016-06-07

申请号：US12553025

申请日：2009-09-02

申请人： Sten Heikman ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

发明人： Sten Heikman ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

IPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/38 ,  H01L33/60 ,  H01L33/40

CPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/0062 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.

摘要翻译： 具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。 至少一个内表面被抛光以实现平滑的界面。 抛光剂可以在基体表面，复合部分的各个层上，或两者上进行。 所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。

公开(公告)号：US08759868B2

公开(公告)日：2014-06-24

申请号：US13271865

申请日：2011-10-12

申请人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

发明人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC分类号： H01L29/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/32 ,  H01L33/38

CPC分类号： H01L33/42 ,  H01L24/32 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/00

摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

摘要翻译： 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。

公开(公告)号：US20120080688A1

公开(公告)日：2012-04-05

申请号：US13271865

申请日：2011-10-12

申请人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

发明人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC分类号： H01L33/02 ,  H01L33/60

CPC分类号： H01L33/42 ,  H01L24/32 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/00

摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

摘要翻译： 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。

公开(公告)号：US08089090B2

公开(公告)日：2012-01-03

申请号：US11191111

申请日：2005-07-27

申请人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

发明人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC分类号： H01L29/22

CPC分类号： H01L33/42 ,  H01L24/32 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.

摘要翻译： 基于半导体的发光器件（LED）可以在p型氮化物层上包括p型氮化物层和金属欧姆接触。 金属欧姆接触可以具有小于约的平均厚度和小于约10-3欧姆 - 厘米2的特定接触电阻。