公开(公告)号：US20150083332A1

公开(公告)日：2015-03-26

申请号：US14561785

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KIKUCHI ,  Satoshi KAYAMORI ,  Shinya SHIMA ,  Yuichiro SAKAMOTO ,  Kimihiro HIGUCHI ,  Kaoru OOHASHI ,  Takehiro UEDA ,  Munehiro SHIBUYA ,  Tadashi GONDAI

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理的基板的表面发生。

公开(公告)号：US20180301362A1

公开(公告)日：2018-10-18

申请号：US16013189

申请日：2018-06-20

Applicant: Tokyo Electron Limited

Inventor： Kaoru OOHASHI

IPC: H01L21/67 ,  H02N13/00 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/66

Abstract: A method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece with the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece, and a heater that is arranged within or near the electrostatic chuck and is divided into a plurality of heater zones. The method includes adjusting a control temperature of the heater with respect to each of the heater zones, and correcting a temperature interference from an adjacent heater zone of each of the heater zones with respect to a setting temperature of each of the heater zones upon adjusting the control temperature.

公开(公告)号：US20170213751A1

公开(公告)日：2017-07-27

申请号：US15428313

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kaoru OOHASHI

IPC: H01L21/67 ,  H02N13/00 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/67248 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/26 ,  H02N13/00

Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.

公开(公告)号：US20200219740A1

公开(公告)日：2020-07-09

申请号：US16818132

申请日：2020-03-13

Applicant: Tokyo Electron Limited

Inventor： Kaoru OOHASHI

IPC: H01L21/67 ,  H02N13/00 ,  H01L21/683 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: A method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece with the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece, and a heater that is arranged within or near the electrostatic chuck and is divided into a plurality of heater zones. The method includes adjusting a control temperature of the heater with respect to each of the heater zones, and correcting a temperature interference from an adjacent heater zone of each of the heater zones with respect to a setting temperature of each of the heater zones upon adjusting the control temperature.

公开(公告)号：US20130174983A1

公开(公告)日：2013-07-11

申请号：US13783564

申请日：2013-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KIKUCHI ,  Satoshi KAYAMORI ,  Shinya SHIMA ,  Yuichiro SAKAMOTO ,  Kimihiro HIGUCHI ,  Kaoru OOHASHI ,  Takehiro UEDA ,  Munehiro SHIBUYA ,  Tadashi GONDAI

IPC: H01L21/67

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20190066985A1

公开(公告)日：2019-02-28

申请号：US16110201

申请日：2018-08-23

Applicant: Tokyo Electron Limited

Inventor： Jun HIROSE ,  Kaoru OOHASHI

IPC: H01J37/32 ,  H01L21/683

Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

公开(公告)号：US20150083333A1

公开(公告)日：2015-03-26

申请号：US14561595

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KIKUCHI ,  Satoshi KAYAMORI ,  Shinya SHIMA ,  Yuichiro SAKAMOTO ,  Kimihiro HIGUCHI ,  Kaoru OOHASHI ,  Takehiro UEDA ,  Munehiro SHIBUYA ,  Tadashi GONDAI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20130299083A1

公开(公告)日：2013-11-14

申请号：US13944948

申请日：2013-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Yoshiyuki KOBAYASHI ,  Kaoru OOHASHI

IPC: B32B38/08 ,  B32B38/10

CPC classification number: B32B38/08 ,  B32B38/10 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  Y10T29/49359 ,  Y10T29/494 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T279/23

Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.

Abstract translation: 基板安装台包括：板状部件，其设置有用于在其上安装基板的安装表面;多个气体注入开口，其在安装面上开口以朝向安装表面供应气体;以及气体供应通道，用于通过 气体注入口; 以及覆盖安装表面的热喷涂陶瓷层。 气体供给通道的至少内壁部分形成为曲面形状，内壁部分面对气体注入开口。