公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20230230855A1

公开(公告)日：2023-07-20

申请号：US18096144

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Ryuichi ASAKO ,  Naoki UMESHITA

IPC: H01L21/56 ,  H01L21/67

CPC classification number: H01L21/56 ,  H01L21/67126

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20230226571A1

公开(公告)日：2023-07-20

申请号：US18096537

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Ryuichi ASAKO ,  Kenichi UKI

IPC: B05D7/24 ,  B05D1/02

CPC classification number: B05D7/24 ,  B05D1/025 ,  B05D2506/10

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

公开(公告)号：US20230094546A1

公开(公告)日：2023-03-30

申请号：US17954105

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Naoki UMESHITA ,  Toshikazu AKIMOTO ,  Hiroki MAEHARA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.