公开(公告)号：US20150214423A1

公开(公告)日：2015-07-30

申请号：US14481971

申请日：2014-09-10

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Shinya KIKUTA ,  Yoshihiro KATO ,  Koji NEISHI ,  Yoji IIZUKA ,  Hitoshi MIURA ,  Yusaku KASHIWAGI ,  Nobuaki TAKAHASHI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/42 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.

Abstract translation: 一种光学器件的制造方法包括在第一GaN层的主表面上形成掩模，使得掩模在第一层的主表面上的第一区域中具有一个或多个开口，在开口中选择性地生长第一GaN，使得芯 包括在所述第一层的暴露部分上形成所述第一GaN，在所述芯上形成有源层，使得形成有源区，在所述有源区上形成第二GaN层，去除所述掩模覆盖第二区的一部分，形成 在第一层上的第二区域中的第一电极，形成覆盖第二层并在第一层上的第三区域延伸到掩模上的第二电极，在第一电极上形成第一焊盘， 在第三区域中形成第二电极的区域。

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20200083029A1

公开(公告)日：2020-03-12

申请号：US16560151

申请日：2019-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Syuji NOZAWA ,  Yoji IIZUKA ,  Tatsuya YAMAGUCHI

IPC: H01J37/32

Abstract: There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.

公开(公告)号：US20170252756A1

公开(公告)日：2017-09-07

申请号：US15510992

申请日：2015-08-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoji IIZUKA

IPC: B05B1/18 ,  C23C16/455

Abstract: A shower head for a film forming apparatus is provided. The shower head includes: a gas injection plate provided with a plurality of gas injection holes extending in the thickness direction thereof; and a gas supply unit that provides a plurality of flow paths that guide gas to the plurality of gas injection holes from a common flow path, each of the plurality of flow paths having one end connected to the common flow path and the other end. Among the flow paths, any two paths that satisfy the condition of a first linear distance between the positions of the ends of one flow path being shorter than a second linear distance between the positions of the ends of the other flow path have a relationship wherein the difference between the length of the one flow path and the first linear distance is larger than the difference between the length of the other flow path and the second linear distance.

公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20190323124A1

公开(公告)日：2019-10-24

申请号：US16390903

申请日：2019-04-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya YAMAGUCHI ,  Reiji NIINO ,  Yoji IIZUKA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  H01L21/67

Abstract: There is provided a film-forming apparatus, comprising: a process container in which a vacuum atmosphere is formed; a rotary table installed in the process container, the rotary table having substrate mounting regions formed on a side of a top surface of the rotary table and configured to mount a plurality of substrates, and the rotary table including a rotary mechanism configured to rotate the substrate mounting regions around a rotary shaft; a heating mechanism configured to heat the substrates mounted on the substrate mounting regions; a gas supply part installed to face a moving region where the substrates move when the rotary table rotates and including gas discharge holes formed to cross the moving region, the gas discharge holes being configured to discharge a first film-forming gas and a second film-forming gas; and an exhaust part configured to exhaust an interior of the process container.

公开(公告)号：US20150214429A1

公开(公告)日：2015-07-30

申请号：US14607723

申请日：2015-01-28

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Yoji IIZUKA ,  Yoshihiro KATO ,  Koji NEISHI ,  Hitoshi MIURA ,  Shinya KIKUTA ,  Yusaku KASHIWAGI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/20 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer.

Abstract translation: 提供了一种棒状发光器件的制造方法，其包括：在第一导电型的GaN层上形成具有侧面和上表面的棒，所述棒由具有第一导电性的GaN制成 -类型; 选择性地生长在杆的上表面上的高电阻率层; 形成多量子阱层以覆盖所述杆和所述高电阻率层的侧表面和所述上表面; 以及形成第二导电类型的GaN层以覆盖多量子阱层。

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20190316257A1

公开(公告)日：2019-10-17

申请号：US16378799

申请日：2019-04-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoji IIZUKA

IPC: C23C16/52 ,  B05D1/00

Abstract: There is provided a film-forming apparatus and a film-forming method. The film-forming apparatus, in a first period, sets the second heater to a temperature T1 at which no film is formed on a substrate disposed on the mounting stand without supplying a precursor gas into the process container, in a second period, sets the second heater to a temperature T2 at which no film is formed on the substrate and supplies a precursor gas into the process container from the precursor gas supply pipe, in a third period, sets the second heater to a film-forming temperature T3, and in the first to third periods, sets the first heater to a temperature T4 at which no film is formed on a periphery of a gas supply port of the precursor gas supply pipe.