公开(公告)号：US12060635B2

公开(公告)日：2024-08-13

申请号：US16881787

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Moriya ,  Tadahiro Ishizaka ,  Yoshinori Morisada

IPC: B32B9/00 ,  C23C16/27 ,  C23C16/455 ,  G03F1/00 ,  H01L21/311

CPC classification number: C23C16/27 ,  C23C16/45536 ,  G03F1/00 ,  H01L21/31144

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

公开(公告)号：US11993849B2

公开(公告)日：2024-05-28

申请号：US17415104

申请日：2019-12-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru Hori ,  Makoto Sekine ,  Hirotsugu Sugiura ,  Tsuyoshi Moriya ,  Satoshi Tanaka ,  Yoshinori Morisada

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US09708507B2

公开(公告)日：2017-07-18

申请号：US14632311

申请日：2015-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei Sugita ,  Tatsuya Yamaguchi ,  Yoshinori Morisada ,  Makoto Fujikawa

IPC: C09D179/08 ,  H01L21/67 ,  C08G73/10 ,  C23C16/30 ,  C23C16/56 ,  H01L21/3105 ,  B05D1/00 ,  B05D3/02 ,  H01L21/3065 ,  H01L21/02

CPC classification number: C09D179/08 ,  B05D1/60 ,  B05D3/0254 ,  C08G73/105 ,  C08G73/1071 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02063 ,  H01L21/3065 ,  H01L21/31058 ,  H01L21/67109

Abstract: A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.

公开(公告)号：US09422452B2

公开(公告)日：2016-08-23

申请号：US14619375

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya Yamaguchi ,  Yoshinori Morisada

IPC: C23C16/455 ,  C09D183/14 ,  B05D1/34 ,  B05D1/00 ,  C08G77/54

CPC classification number: C09D183/14 ,  B05D1/34 ,  B05D1/60 ,  C08G77/54

Abstract: A polymerized film forming method for forming a polymerized film on a target surface of a workpiece using a first raw material gas which contains a first monomer and a second raw material gas which contains a second monomer differing from the first monomer includes: supplying the first raw material gas wherein difunctional non-aromatic amine having a hydrolyzable group is used for the first monomer; and supplying the second raw material gas wherein difunctional acid anhydride is used for the second monomer.

Abstract translation: 使用包含第一单体的第一原料气体和含有与第一单体不同的第二单体的第二原料气体，在工件的目标表面上形成聚合膜的聚合膜形成方法包括：供给第一原料 其中具有可水解基团的双官能非芳族胺用于第一单体的原料气体; 并且供给第二原料气体，其中二官能酸酐用于第二单体。