公开(公告)号：US5721467A

公开(公告)日：1998-02-24

申请号：US707454

申请日：1996-09-04

申请人： Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

发明人： Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

IPC分类号： H01J9/02 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC分类号： H01J1/3042 ,  H01J2201/30423

摘要： A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.

摘要翻译： 公开了一种场致发射冷阴极，其包括由发光材料形成的第一薄膜和与第一薄膜不同的第二薄膜，其中第二薄膜各自叠置在第一薄膜的主表面上， 形成层叠结构，层叠结构的侧面暴露第一薄膜和第二薄膜的侧端部，并且第一薄膜的暴露端部在电场下发射电子。 还公开了制造冷阴极的方法。

公开(公告)号：US06456014B1

公开(公告)日：2002-09-24

申请号：US09606013

申请日：2000-06-29

申请人： Tomio Ono ,  Tadashi Sakai ,  Li Zhang

发明人： Tomio Ono ,  Tadashi Sakai ,  Li Zhang

IPC分类号： G09G310

CPC分类号： H01J1/304 ,  H01J2201/319

摘要： A field emission device comprises an anode plate, an emitter plate having a plurality of filed emission portions that face the anode plate, and a gate plate having openings corresponding to the filed emission portions. The field emission device also comprises a current limiting element composed of a J FET or a MOSFET that is integrally formed with the gate plate and that is inserted between the gate plate and a gate voltage supply terminal. The loss caused by the emitter current is small as the current limiting element is inserted into a gate input portion. If the field emission device including a number of blocks each having the above structure is constituted, a power switching device having sufficient redundancy against a short circuit between the gate and the emitter can be implemented.

摘要翻译： 场发射装置包括阳极板，具有面向阳极板的多个场发射部分的发射极板以及具有对应于场发射部分的开口的栅极板。 励磁发射装置还包括由与栅极板一体形成并且插入在栅极板和栅极电压提供端子之间的J FET或MOSFET组成的限流元件。 由于限流元件被插入到栅极输入部分中，由发射极电流引起的损耗很小。 如果构成包括多个具有上述结构的块的场发射器件，则可以实现具有足够的冗余以抵抗栅极和发射极之间的短路的功率开关器件。

公开(公告)号：US5898258A

公开(公告)日：1999-04-27

申请号：US788695

申请日：1997-01-24

申请人： Tadashi Sakai ,  Tomio Ono ,  Li Zhang

发明人： Tadashi Sakai ,  Tomio Ono ,  Li Zhang

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/025

摘要： A field emission type cold cathode apparatus comprises a mother material layer made of an n-type silicon layer, a conical emitter having an arcuate side surface, an insulating layer formed in a surface region of the mother material layer in a manner to define the arcuate side surface of the emitter and having a concave portion formed to expose the tip portion of the conical emitter, the depth of the concave portion being determined such that the lower portion of the emitter covering a region more than half the height of the emitter is buried in the insulating layer, and a gate electrode formed over the insulating film in a manner to surround the emitter and having an open portion exposing the tip portion of the emitter, the diameter of the open portion being smaller than the diameter in the base portion of the emitter.

摘要翻译： 场致发射型冷阴极装置包括由n型硅层构成的母材层，具有弓形侧面的圆锥形发射体，以母材层的表面区域形成绝缘层，以限定弓形 并且具有形成为露出锥形发射器的尖端部分的凹部，凹部的深度被确定为使得覆盖发射器的高度的一半以上的区域的发射器的下部被掩埋 在所述绝缘层中形成有栅电极，所述栅电极以围绕所述发射极的方式形成在所述绝缘膜上方，并具有露出所述发射极的前端部的开口部，所述开口部的直径比所述绝缘膜的基部的直径小 发射器。

公开(公告)号：US07642542B2

公开(公告)日：2010-01-05

申请号：US11531577

申请日：2006-09-13

申请人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

发明人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/24

CPC分类号： H01L33/02 ,  H01L33/24 ,  H01L33/44 ,  H01L33/58

摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

摘要翻译： 一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

公开(公告)号：US07528535B2

公开(公告)日：2009-05-05

申请号：US11075883

申请日：2005-03-10

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

IPC分类号： H01J1/62

CPC分类号： H01J1/32 ,  H01J9/247 ,  H01J65/046

摘要： A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

摘要翻译： 冷阴极放电灯包括：透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。 每个冷阴极包括：具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

公开(公告)号：US20070046170A1

公开(公告)日：2007-03-01

申请号：US11366468

申请日：2006-03-03

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J1/62

CPC分类号： H01J61/0672 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/72

摘要： A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.

摘要翻译： 用于放电灯的冷阴极包括具有弯曲部分的金属板; 形成在所述金属板的除了所述弯曲部之外的表面上的金刚石膜; 以及安装在金属板上的金属构件。

公开(公告)号：US20070029935A1

公开(公告)日：2007-02-08

申请号：US11495731

申请日：2006-07-31

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J17/02

CPC分类号： H01J21/04 ,  H01J3/021

摘要： The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

摘要翻译： 电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒，形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极，被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元，其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。

公开(公告)号：US06103133A

公开(公告)日：2000-08-15

申请号：US42738

申请日：1998-03-17

申请人： Naoshi Sakuma ,  Tomio Ono ,  Tadashi Sakai

发明人： Naoshi Sakuma ,  Tomio Ono ,  Tadashi Sakai

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  H01J9/02 ,  B44C1/22 ,  C23C14/34

CPC分类号： C23C16/27 ,  H01J9/025 ,  H01J2201/30457

摘要： The present invention intends to provide a manufacturing method of a vacuum micro device, including the steps of forming diamond nuclei on a substrate, forming emitters by etching the substrate with use of the diamond nuclei as a mask, forming an insulating layer and a gate electrode layer as a gate electrode on the emitters, such that the insulating layer and the gate electrode layer are stacked in order, and exposing the diamond nuclei by partially etching the gate electrode layer and the insulating layer.

摘要翻译： 本发明旨在提供一种真空微型器件的制造方法，包括以下步骤：在衬底上形成金刚石核，通过使用金刚石核作为掩模蚀刻衬底来形成发射体，形成绝缘层和栅电极 层，作为发射极上的栅电极，使得绝缘层和栅电极层依次层叠，并通过部分蚀刻栅电极层和绝缘层来暴露金刚石核。

公开(公告)号：US6057636A

公开(公告)日：2000-05-02

申请号：US931417

申请日：1997-09-16

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

IPC分类号： H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H03K17/54 ,  H01J1/46 ,  H01J1/02 ,  H01J1/05

CPC分类号： H01J21/105 ,  H03K17/545

摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

摘要翻译： 本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为 由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

公开(公告)号：US20080238296A1

公开(公告)日：2008-10-02

申请号：US12042022

申请日：2008-03-04

申请人： Yutaka Nakai ,  Tomio Ono ,  Tadashi Sakai

发明人： Yutaka Nakai ,  Tomio Ono ,  Tadashi Sakai

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J17/04 ,  H01J17/49 ,  H01J35/06 ,  H01J2235/06

摘要： An electron-emitting device includes a first electrode; an insulating film that is disposed on the first electrode, includes at least one step in an upper surface thereof, and includes a first surface on a lower step portion of the step and a second surface on an upper step portion of the step; a second electrode that is disposed on the first surface at a distance apart from the step; and a third electrode that is disposed on the second surface at a distance apart from the step.

摘要翻译： 电子发射器件包括第一电极; 设置在所述第一电极上的绝缘膜包括在其上表面中的至少一个台阶，并且包括所述台阶的下台阶部分上的第一表面和所述台阶的上台阶部分上的第二表面; 第二电极，其设置在与所述台阶相距一定距离的所述第一表面上; 以及第三电极，其设置在距离台阶一定距离的第二表面上。