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1.发明授权Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film 有权用于制造半导体氮化物膜的方法，基座托盘以及用于制造半导体氮化物膜的装置公开(公告)号：US06727164B2
公开(公告)日：2004-04-27
申请号：US10060802
申请日：2002-01-30
IPC分类号： H01L2120
CPC分类号： C23C16/4401 , C23C16/4583
摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.
摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。
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2.发明授权Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer 有权制造III族氮化物膜的方法和用于制造III族氮化物膜的底层及其制造方法公开(公告)号：US06649493B2
公开(公告)日：2003-11-18
申请号：US10044778
申请日：2001-11-07
IPC分类号： H01L2130
CPC分类号： C30B25/18 , C23C16/0218 , C23C16/303 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.
摘要翻译： 提供了一种制造III族氮化物膜的方法，包括以下步骤：制备衬底，形成底膜，然后在底膜上形成III族氮化物膜。 底膜是包含至少一种III族元素的III族氮化物，并且相对于下膜的III族氮化物的所有III族元素包括至少50原子％的元素Al。 底膜的表面是轮廓（凹凸）并且包括平坦区域，并且小于50％的底膜表面被平坦区域占据。
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公开(公告)号：US07067847B2
公开(公告)日：2006-06-27
申请号：US10017325
申请日：2001-12-14
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.
摘要翻译： 在由例如蓝宝石单晶制成的基板上形成FWHM X射线摇摆曲线值为90秒以下的Al底层。 在AlN底层上形成缓冲层，并且具有下列组成：在1-pq N（0 <= p < = 1，0 <= y <= q）。 在缓冲层上形成GaN基半导体层组。
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公开(公告)号：US06989202B2
公开(公告)日：2006-01-24
申请号：US10891340
申请日：2004-07-14
IPC分类号： B32B9/00
CPC分类号： C30B25/18 , C23C16/0218 , C23C16/303 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.
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公开(公告)号：US06554896B1
公开(公告)日：2003-04-29
申请号：US09713636
申请日：2000-11-15
IPC分类号： C30B2940
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： An AlxGayInzN(x+y+z=1,x,y,z≧0) film is epitaxially grown, for example to a thickness of about 1.0 &mgr;m, on a surface of a base material. A surface of the AlxGayInzN film opposing the base material is polished and thus, flattened to have a surface roughness Ra of less than 10 Å and a thickness of about 1.0 &mgr;m. A high crystallinity nitride film is interposed between the base material and the AlxGayInzN film.
摘要翻译： 在基材的表面上外延生长Al x Ga y In z N（x + y + z = 1，x，y，z> = 0），例如厚度约1.0μm。 抛光AlxGayInzN膜与基材相对的表面，因此被平坦化，具有小于10的表面粗糙度Ra和约1.0μm的厚度。 在基材和AlxGayInzN膜之间插入高结晶性氮化物膜。
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公开(公告)号：US06426519B1
公开(公告)日：2002-07-30
申请号：US09713547
申请日：2000-11-15
IPC分类号： H01L2978
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an AlxGayInzN (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the AlxGayInzN film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.
摘要翻译： 在蓝宝石基板上形成条形沟槽作为基材。 然后，将蓝宝石衬底置于CVD室中，并将AlxGayInzN（x + y + z = 1，x> 0，y，z> = 0）膜外延生长在蓝宝石衬底上，以便将沟渠嵌入 选择性侧向外延生长法。 结果，AlxGayInzN膜在带状沟槽的至少一个凹部和凸部上具有低位错密度区域。
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公开(公告)号：US06805982B2
公开(公告)日：2004-10-19
申请号：US10425734
申请日：2003-04-30
IPC分类号： B32B900
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/08 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L29/2003 , Y10T428/265
摘要： A group III nitride film is formed on an epitaxial substrate having an underlayer film containing Al. According to the present invention, the change of the properties of the II nitride film may be reduced The properties of the semiconductor device may be thus reduced and the production yield may be improved. An underlayer 2 made of a group III nitride containing at least Al is formed on a substrate 1 made of a single crystal. An oxide film 3 is formed on the underlayer film 2 to produce an epitaxial substrate 10. The oxygen content of the oxide film 3 at the surface is not lower than 3 atomic percent and the thickness is not larger than 50 angstrom.
摘要翻译： 在具有含有Al的下层膜的外延基板上形成III族氮化物膜。 根据本发明，可以降低II族氮化物膜的性能的变化。因此，可以降低半导体器件的性能，并且可以提高生产成品率。 在由单晶构成的基板1上形成由至少含有Al的III族氮化物构成的底层2。 在下层膜2上形成氧化膜3，制作外延衬底10.表面氧化膜3的氧含量不低于3原子％，厚度不大于50埃。
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公开(公告)号：US06765244B2
公开(公告)日：2004-07-20
申请号：US10156595
申请日：2002-05-28
IPC分类号： H01L310328
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L31/1852 , H01L33/32 , Y02E10/544
摘要： A III nitride multilayer including a given substrate, a III nitride underfilm including an Al content of 50 atomic percent or more for all of the III elements present in the III nitride underfilm, and a III nitride film including a lower Al content than the Al content of the III nitride underfilm by 10 atomic percent or more. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 800 seconds or below at the (100) plane. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 200 seconds or below at the (002) plane.
摘要翻译： 包含给定衬底的III族氮化物层，包含III族氮化物底膜中存在的所有III族元素的Al含量为50原子％以上的III族氮化物底膜，以及包含比Al含量低的Al含量的III族氮化物膜 的III族氮化物底膜减少10原子％以上。 III型氮化物膜的半高X射线摇摆曲线的全宽在（100）平面处设定为800秒以下。 III族氮化物膜的半高X射线摇摆曲线值的全宽在（002）面设定为200秒以下。
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公开(公告)号：US06495894B2
公开(公告)日：2002-12-17
申请号：US09854925
申请日：2001-05-14
IPC分类号： H01L3300
CPC分类号： H01L33/0075 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L31/105 , H01L33/007
摘要： A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
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10.发明授权III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal 有权III族氮化物外延衬底，用于III族氮化物元素的外延衬底和III族氮化物元件，其包括形成在蓝宝石单晶的主表面上的表面氮化物层公开(公告)号：US06844611B2
公开(公告)日：2005-01-18
申请号：US10247366
申请日：2002-09-20
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/16 , H01L33/32 , H01L31/0304
CPC分类号： C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： The crystal orientation of the main surface of a sapphire single crystal base material to constitute an epitaxial substrate is inclined from the orientation (c-axis) preferably for the orientation (m-axis) by a range within 0.02-0.3 degrees. Then, a surface nitride layer is formed at the main surface of the base material. Then, a III nitride underfilm is formed on the main surface of the base material via the surface nitride layer. The III nitride underfilm includes at least Al element, and the full width at half maximum at (101-2) reflection in X-ray rocking curve of the III nitride underfilm is 2000 seconds. The surface roughness Ra within 5 μm area is 3.5 Å.
摘要翻译： 用于构成外延基板的蓝宝石单晶基材的主表面的晶体取向优选从<0001>取向（c轴）向<1-100>取向（m轴）倾斜一个范围内 0.02-0.3度。 然后，在基材的主表面上形成表面氮化物层。 然后，通过表面氮化物层在基材的主表面上形成III族氮化物底膜。 III族氮化物底膜至少包括Al元素，并且III族氮化物底膜的X射线摇摆曲线中（101-2）反射处的半峰全宽为2000秒。 5um范围内的表面粗糙度Ra为3.5Å。
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