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14 条记录 (耗时 0.031 秒)

    Skin external agents and drugs
    7.
    发明授权
    Skin external agents and drugs 失效
    皮肤外用剂和药物

    公开(公告)号：US07037489B2

    公开(公告)日：2006-05-02

    申请号：US10169040

    申请日：2000-12-15

    申请人： Hideyo Uchiwa ,  Sachiyo Hirotsu ,  Akinori Haratake ,  Takeshi Ikemoto ,  Junichi Matsui ,  Shunsuke Yamazaki ,  Masaki Yoshida ,  Motoi Hayase

    发明人： Hideyo Uchiwa ,  Sachiyo Hirotsu ,  Akinori Haratake ,  Takeshi Ikemoto ,  Junichi Matsui ,  Shunsuke Yamazaki ,  Masaki Yoshida ,  Motoi Hayase

    IPC分类号： A61K31/74 ,  A61K6/00

    CPC分类号： C07C69/60 ,  A61K8/39 ,  A61K8/671 ,  A61K31/22 ,  A61K31/225 ,  A61Q17/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/007 ,  A61Q19/08 ,  A61Q19/10

    摘要： Skin external agent compositions and drugs characterized by containing fumaric acid diester derivatives represented by following general formula (1), wherein R1 represents C1-4 alkylene; R2 and R3 represent each liner or branched C1-8 alkyl; and n is an integer of 2 to 5; which provide epidermal barrier function potentiating agents and skin external agent compositions having a high safety, quickly relieving epidermal permeation barrier function failures and having an effect of maintaining the skin in a cosmetologically healthy state; agents to be used together with HB-EFG expression inducing agents accelerating epidermal turnover, amphiregulin expression inhibitors regulating excessive epidermal proliferation, and retinoic acid or its derivative preventing skin chapping caused by retinoic acid or its derivative; and skin aging relieving agents capable of ameliorating depression in the skin metabolism and thinning in association with aging.

    摘要翻译： 皮肤外用剂组合物和药物，其特征在于含有由以下通式（1）表示的富马酸二酯衍生物，其中R 1表示C 1-4烷基; R 2和R 3代表每个内衬或支链C 1-8烷基; n为2〜5的整数， 其提供表皮屏障功能增强剂和皮肤外用剂组合物，其具有高安全性，快速缓解表皮渗透屏障功能障碍并具有保持皮肤处于美观健康状态的效果; 与HB-EFG表达诱导剂加速表皮转换，调节过度表皮增生的双调蛋白表达抑制剂和视黄酸或其衍生物一起使用的药剂可以防止由视黄酸或其衍生物引起的皮肤裂伤; 以及能够改善皮肤新陈代谢抑制和与老化相关的变薄的皮肤老化缓解剂。

    Method for producing L-cysteine
    8.
    发明授权
    Method for producing L-cysteine 有权
    生产L-半胱氨酸的方法

    公开(公告)号：US09234223B2

    公开(公告)日：2016-01-12

    申请号：US13431104

    申请日：2012-03-27

    申请人： Shunsuke Yamazaki ,  Gen Nonaka ,  Kazuhiro Takumi

    发明人： Shunsuke Yamazaki ,  Gen Nonaka ,  Kazuhiro Takumi

    IPC分类号： C12P13/12 ,  C12N9/02 ,  C12N9/10 ,  C12N9/88

    CPC分类号： C12P13/12 ,  C12N9/001 ,  C12N9/0051 ,  C12N9/1007 ,  C12N9/88 ,  C12Y103/01076 ,  C12Y108/99001 ,  C12Y201/01107 ,  C12Y402/99 ,  C12Y499/01004

    摘要： A method for producing L-cysteine and the like is provided by developing a novel technique for improving bacterial L-cysteine-producing ability. The method includes the steps of culturing a bacterium belonging to the genus Escherichia which has L-cysteine-producing ability, and in which expression of a gene involved in sulfite reduction is enhanced, in a medium containing thiosulfate, and collecting L-cysteine, a related substance thereof, or a mixture thereof which accumulate in the medium.

    摘要翻译： 通过开发用于改善细菌L-半胱氨酸生产能力的新技术，提供L-半胱氨酸的生产方法。 该方法包括以下步骤：在含有硫代硫酸盐的培养基中培养属于具有L-半胱氨酸生产能力的埃希氏菌属细菌，其中涉及亚硫酸盐还原的基因的表达增强，并收集L-半胱氨酸的步骤， 其相关物质或其在培养基中积累的混合物。

    COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS
    9.
    发明申请
    COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS 有权
    化合物半导体沉积方法和装置

    公开(公告)号：US20120058627A1

    公开(公告)日：2012-03-08

    申请号：US13266337

    申请日：2010-04-28

    申请人： Motoichi Ohtsu ,  Tadashi Kawazoe ,  Shunsuke Yamazaki ,  Koichi Kajiyama ,  Michinobu Mizumura ,  Keiichi Ito

    发明人： Motoichi Ohtsu ,  Tadashi Kawazoe ,  Shunsuke Yamazaki ,  Koichi Kajiyama ,  Michinobu Mizumura ,  Keiichi Ito

    IPC分类号： H01L21/20 ,  B05C9/08

    CPC分类号： C23C16/481 ,  C23C14/548 ,  C23C16/303 ,  C23C16/52 ,  C30B25/00 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062

    摘要： Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.

    摘要翻译： 提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。 在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中，将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上，同时将化合物半导体沉积在 基板13，基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光，基于产生的近场光，以多个阶段形成化合物半导体的新的振动电平，以及 对应于激发能的化合物半导体中的成分被传播光激发，通过振动水平，激发能量等于或小于传播光的能量的新的振动水平被激发，从而解吸部件 。

    Compound semiconductor deposition method and apparatus
    10.
    发明授权
    Compound semiconductor deposition method and apparatus 有权
    化合物半导体沉积方法和装置

    公开(公告)号：US08912079B2

    公开(公告)日：2014-12-16

    申请号：US13266337

    申请日：2010-04-28

    申请人： Motoichi Ohtsu ,  Takashi Yatsui ,  Tadashi Kawazoe ,  Shunsuke Yamazaki ,  Koichi Kajiyama ,  Michinobu Mizumura ,  Keiichi Ito

    发明人： Motoichi Ohtsu ,  Takashi Yatsui ,  Tadashi Kawazoe ,  Shunsuke Yamazaki ,  Koichi Kajiyama ,  Michinobu Mizumura ,  Keiichi Ito

    IPC分类号： H01L21/20 ,  B05C9/08 ,  C23C16/48 ,  C23C16/30 ,  C30B25/00 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  C23C14/54 ,  C23C16/52

    CPC分类号： C23C16/481 ,  C23C14/548 ,  C23C16/303 ,  C23C16/52 ,  C30B25/00 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062

    摘要： Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.

    摘要翻译： 提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。 在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中，将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上，同时将化合物半导体沉积在 基板13，基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光，基于产生的近场光，以多个阶段形成化合物半导体的新的振动电平，以及 对应于激发能的化合物半导体中的成分被传播光激发，通过振动水平，激发能量等于或小于传播光的能量的新的振动水平被激发，从而解吸部件 。