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    Method of forming resist pattern
    1.
    发明授权
    Method of forming resist pattern 失效
    形成抗蚀剂图案的方法

    公开(公告)号：US08236483B2

    公开(公告)日：2012-08-07

    申请号：US12533685

    申请日：2009-07-31

    申请人： Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    发明人： Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    IPC分类号： G03F7/26

    CPC分类号： G03F7/2022 ,  G03F7/095

    摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：使用化学放大的负性抗蚀剂组合物在基板上形成抗蚀剂膜; 通过使抗蚀剂膜首先通过光掩模曝光来形成第一线和空间图案的潜像; 通过使光刻胶膜通过光掩模进行第二曝光，形成与第一线和空间图案的潜像相交的第二线和空间图案的潜像; 并且使抗蚀剂膜显影以在抗蚀剂膜中形成孔图案。

    METHOD OF FORMING RESIST PATTERN
    2.
    发明申请
    METHOD OF FORMING RESIST PATTERN 失效
    形成电阻图案的方法

    公开(公告)号：US20100035192A1

    公开(公告)日：2010-02-11

    申请号：US12533685

    申请日：2009-07-31

    申请人： Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    发明人： Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2022 ,  G03F7/095

    摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：使用化学放大型负性抗蚀剂组合物在基板上形成抗蚀剂膜; 通过使抗蚀剂膜首先通过光掩模曝光来形成第一线和空间图案的潜像; 通过使光刻胶膜通过光掩模进行第二曝光，形成与第一线和空间图案的潜像相交的第二线和空间图案的潜像; 并且使抗蚀剂膜显影以在抗蚀剂膜中形成孔图案。

    COMPOUND, POLYMERIZABLE COMPOSITION, RESIN, AND USE OF THE COMPOSITION AND THE RESIN
    4.
    发明申请
    COMPOUND, POLYMERIZABLE COMPOSITION, RESIN, AND USE OF THE COMPOSITION AND THE RESIN 有权
    化合物，可聚合组合物，树脂和组合物和树脂的用途

    公开(公告)号：US20110130516A1

    公开(公告)日：2011-06-02

    申请号：US13055280

    申请日：2009-07-23

    申请人： Masakazu Murakami ,  Tomoyuki Ando ,  Seiichi Kobayashi

    发明人： Masakazu Murakami ,  Tomoyuki Ando ,  Seiichi Kobayashi

    IPC分类号： C08G75/08 ,  C07F9/00 ,  C08L81/02

    CPC分类号： C08G75/08 ,  C07F9/005 ,  C07F9/90 ,  C08G75/06

    摘要： Disclosed is a compound represented by the following general formula (1), wherein, in the formula, M1 represents Sb or Bi; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; Y1 represents a monovalent inorganic or organic group; a represents a number of 1 or 2; b represents a number of 0 or an integer of not less than 1; c represents an integer of not less than 1 and not more than d; d represents a valence of M1; when d−c is not less than 2, a plurality of Y1s each independently represent a monovalent inorganic or organic group and may be bonded to each other to form an M1-containing ring; and e represents a number of 0 or an integer of not less than 1.

    摘要翻译： 公开了由以下通式（1）表示的化合物，其中，在式中，M1表示Sb或Bi; X1和X2各自独立地表示硫原子或氧原子; R1表示二价有机基团; Y1表示一价无机或有机基团; a代表1或2的数字; b表示0或不小于1的整数; c表示不小于1且不大于d的整数; d表示M1的化合价; 当d-c不小于2时，多个Y1各自独立地表示一价无机或有机基团，并且可以彼此键合以形成含有M1的环; e表示0或1以上的整数。

    Negative resist composition
    5.
    发明授权
    Negative resist composition 有权
    负阻抗组成

    公开(公告)号：US07749677B2

    公开(公告)日：2010-07-06

    申请号：US10593004

    申请日：2005-03-11

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC分类号： C08G77/16 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0757 ,  Y10S430/106 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/143

    摘要： The negative resist composition of the present invention comprises a silsesguioxane resin (A) comprising a constituent unit (a1) represented by the following general formula (I) and a constituent unit (a2) represented by the following general formula (II), an acid generator component (B) which generates an acid upon exposure, and a crosslinking agent component (C): wherein R1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, and

    摘要翻译： 本发明的负型抗蚀剂组合物包含由以下通式（I）表示的构成单元（a1）和由以下通式（II）表示的构成单元（a2））的硅氧烷氧树脂（A），酸 曝光时产生酸的发生剂组分（B）和交联剂组分（C）：其中R 1表示具有1至5个碳原子的直链或支链亚烷基，和

    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    7.
    发明申请
    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
    积极抵抗组合和阻力图形成方法

    公开(公告)号：US20090075177A1

    公开(公告)日：2009-03-19

    申请号：US11719179

    申请日：2005-11-28

    申请人： Tomoyuki Ando ,  Takako Hirosaki

    发明人： Tomoyuki Ando ,  Takako Hirosaki

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F1/00

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111

    摘要： A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (α-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).

    摘要翻译： 提供具有优异的尺寸控制性的正型抗蚀剂组合物和抗蚀剂图案形成方法。 该正性抗蚀剂组合物含有包含由（α-甲基）羟基苯乙烯衍生的构成单元（a11）的碱溶性结构单元（a1）和具有酸解离溶解性的结构单元（a2）的树脂成分（A） 包括由以下通式（II）表示的酸解离溶解抑制基团（II）和/或特定链酸解离溶解抑制基团（III）的组合物。 酸性发生剂组分（B），其在暴露时产生酸; 优选含有芳香族胺（C）。

    Negative Resist Composition
    8.
    发明申请
    Negative Resist Composition 有权
    负阻抗组成

    公开(公告)号：US20080241753A1

    公开(公告)日：2008-10-02

    申请号：US10593004

    申请日：2005-03-11

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： G03F7/004

    CPC分类号： C08G77/16 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0757 ,  Y10S430/106 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/143

    摘要： The negative resist composition of the present invention comprises a silsesguioxane resin (A) comprising a constituent unit (a1) represented by the following general formula (I) and a constituent unit (a2) represented by the following general formula (II), an acid generator component (B) which generates an acid upon exposure, and a crosslinking agent component (C): wherein R1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, and

    摘要翻译： 本发明的负型抗蚀剂组合物包含由以下通式（I）表示的构成单元（a1）和由以下通式（II）表示的构成单元（a2））的硅氧烷氧树脂（A），酸 曝光时产生酸的发生剂组分（B）和交联剂组分（C）：其中R 1表示具有1至5个碳原子的直链或支链亚烷基，和