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    Lithography pattern shrink process and articles
    4.
    发明授权
    Lithography pattern shrink process and articles 失效
    平版印刷图案收缩工艺和文章

    公开(公告)号：US07449230B2

    公开(公告)日：2008-11-11

    申请号：US11063411

    申请日：2005-02-23

    申请人： Ram W. Sabnis ,  James E. Lamb, III

    发明人： Ram W. Sabnis ,  James E. Lamb, III

    IPC分类号： B32B3/30

    CPC分类号： H01L21/02274 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/312 ,  H01L21/76816 ,  H01L21/76885 ,  Y10T428/24331 ,  Y10T428/24562

    摘要： Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering. The inventive methods are useful for providing highly conformal coatings on large surface substrates having super submicron (i.e., 0.15 μm or smaller) features. The process is environmentally friendly and relatively low cost compared to other options.

    摘要翻译： 提供了通过各种各样的沉积工艺将薄的，均匀的共形有机聚合物膜应用于光刻图案衬底的新方法。 本发明的方法导致平版印刷图案中间隙的缩小，从而产生更小的尺寸。 通过控制沉积速率以提供所需的最终结构尺寸来选择性地控制图案收缩量。 使用各种有机薄膜作为这些薄膜的材料。 本发明的方法适用于在光刻中使用的任何图案化技术以提供图案尺寸的减小。 可应用的器件级别的实例包括栅极层的生产，有源器件层的离子注入和实质金属层，电介质图案化，由镶嵌生成的互连工艺，双镶嵌，后端封装层以及需要通过电沉积沉积多层的器件 或溅射。 本发明的方法可用于在具有超亚微米（即0.15μm或更小）特征的大表面基底上提供高保形涂层。 与其他选项相比，该过程是环保的，成本相对较低。

    Contact planarization materials that generate no volatile byproducts or residue during curing
    5.
    发明授权
    Contact planarization materials that generate no volatile byproducts or residue during curing 有权
    接触在固化期间不产生挥发性副产物或残留物的平面化材料

    公开(公告)号：US06716767B2

    公开(公告)日：2004-04-06

    申请号：US10282542

    申请日：2002-10-28

    申请人： Wu-Sheng Shih ,  James E. Lamb, III ,  Mark Daffron

    发明人： Wu-Sheng Shih ,  James E. Lamb, III ,  Mark Daffron

    IPC分类号： H01L2131

    CPC分类号： B81C1/0046 ,  B81C1/00611 ,  B81C2201/0119 ,  C08G59/68 ,  C08L63/00 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/312

    摘要： The present invention is directed towards planarization materials that produce little or no volatile byproducts during the hardening process when used in contact planarization processes. The materials can be hardened by photo-irradiation or by heat during the planarization process, and they include one or more types of monomers, oligomers, or mixtures thereof, an optional cross-linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of the polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

    摘要翻译： 本发明涉及在用于接触平面化处理时在硬化过程中产生很少或不产生挥发性副产物的平面化材料。 这些材料可以在平坦化过程中通过光照射或加热来硬化，并且它们包括一种或多种类型的单体，低聚物或其混合物，任选的交联剂和任选的有机反应性溶剂。 溶剂（如果使用的话）与单体或低聚物发生化学反应，因此在固化过程中成为聚合物基质的一部分。 这些材料可用于镶嵌，双镶嵌，双层和多层应用，微机电系统（MEMS），封装，光学器件，光子学，光电子学，微电子学和传感器器件制造。

    Fill material for dual damascene processes
    7.
    发明授权
    Fill material for dual damascene processes 有权
    填充双镶嵌工艺的材料

    公开(公告)号：US06391472B1

    公开(公告)日：2002-05-21

    申请号：US09931264

    申请日：2001-08-16

    申请人： James E. Lamb, III ,  Xie Shao

    发明人： James E. Lamb, III ,  Xie Shao

    IPC分类号： B21D3900

    CPC分类号： H01L21/76808 ,  H01L21/312 ,  Y10T428/12556 ,  Y10T428/24802

    摘要： An improved via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid components. The boiling point of the solvent system is less than the cross-linking temperature of the composition. Preferred solvents for use in the solvent system include those selected from the group consisting of alcohols, ethers, glycol ethers, amides, ketones, and mixtures thereof. Preferred polymer binders are those having an aliphatic backbone and a molecular weight of less than about 80,000, with polyesters being particularly preferred. In use, the fill composition is applied to the substrate surfaces forming the contact or via holes as well as to the substrate surfaces surrounding the holes, followed by heating to the composition reflow temperature so as to cause the composition to uniformly flow into and cover the hole-forming surfaces and substrate surfaces. The composition is then cured, and the remainder of the dual damascene process is carried out.

    摘要翻译： 提供了一种改进的通孔和接触孔填充组合物以及在双镶嵌生产电路中使用该组合物的方法。 广泛地，填充组合物包括一定量的固体组分，包括聚合物粘合剂和固体组分的溶剂体系。 溶剂系统的沸点小于组合物的交联温度。 用于溶剂系统的优选溶剂包括选自醇，醚，二醇醚，酰胺，酮及其混合物的那些溶剂。 优选的聚合物粘合剂是具有脂族主链且分子量小于约80,000的聚合物粘合剂，特别优选聚酯。 在使用中，将填充组合物施加到形成接触或通孔的基底表面以及围绕孔的基底表面，随后加热到组成回流温度，以使组合物均匀地流入并覆盖 孔形成表面和基底表面。 然后将组合物固化，并进行双镶嵌工艺的其余部分。

    Planarization method for multi-layer lithography processing
    9.
    发明授权
    Planarization method for multi-layer lithography processing 有权
    多层光刻处理的平面化方法

    公开(公告)号：US07455955B2

    公开(公告)日：2008-11-25

    申请号：US10373897

    申请日：2003-02-24

    申请人： Wu-Sheng Shih ,  James E. Lamb, III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

    发明人： Wu-Sheng Shih ,  James E. Lamb, III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/094 ,  G03F7/095 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31144 ,  Y10T428/24802 ,  Y10T428/24851

    摘要： The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

    摘要翻译： 本发明涉及可用于平面化具有用于光刻应用的宽范围的地形特征密度的衬底表面的接触平面化方法。 这些方法使用可热固化，可光固化或热塑性材料，以在光刻应用的地形衬底表面上提供全局平面化的表面。 可以在平坦化表面上获得具有全局平面度和均匀厚度的附加涂层。 这些本发明的方法可以用于单层，双层或多层加工，其涉及底部抗反射涂层，光致抗蚀剂，硬掩模和其它有机和无机聚合物，按照特定应用所要求的合适的涂层顺序。 更具体地，本发明产生用于双镶嵌和双层工艺的全局平面表面，其具有极大改善的光刻工艺纬度。 本发明还提供了使用压印光刻，纳米压印光刻，热压印光刻和冲压图案转印技术来传输图案的全局平面表面。