Apparatus for transferring electric charges
    2.
    发明授权
    Apparatus for transferring electric charges 失效
    用于传输电荷的装置

    公开(公告)号:US5892251A

    公开(公告)日:1999-04-06

    申请号:US892935

    申请日:1997-07-15

    摘要: A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair of transfer electrodes and a potential well formed at the pair of the transfer electrodes located at the most downstream point is made shallower than that at any other pair of transfer electrodes allowing the output dynamic range of a charge transfer device to be increased for improving the output quality.

    摘要翻译: 一种电荷转移装置,其包括例如掩埋型电荷耦合器件,其中位于电荷转移方向的最下游点的一对转移电极由不同于任何另一对转移电极的驱动脉冲驱动, 在位于最下游点的一对转移电极处良好形成的电位比在任何另一对转移电极处的电位更浅,允许增加电荷转移装置的输出动态范围以提高输出质量。

    Protective device for semiconductor IC
    3.
    发明授权
    Protective device for semiconductor IC 失效
    半导体IC保护装置

    公开(公告)号:US5373179A

    公开(公告)日:1994-12-13

    申请号:US103094

    申请日:1993-08-06

    CPC分类号: H01L27/0259 H01L27/0248

    摘要: A protective circuit protects a plurality of protected portions having different withstand voltages and operation voltages of an active portion of a CCD solid state imaging device or the like by protective elements (e.g., transistors). The respective protected portions can be protected in an optimum fashion in response to the withstand voltages and operation voltages thereof. The breakdown voltages of the respective protective transistors are made different in response to the withstand voltages and operation voltages of the protected portions.

    摘要翻译: 保护电路通过保护元件(例如,晶体管)保护具有不同耐受电压和CCD固态成像器件等的有源部分的工作电压的多个受保护部分。 可以根据其耐受电压和操作电压以最佳方式保护相应的保护部分。 响应于受保护部分的耐受电压和操作电压,使各个保护晶体管的击穿电压不同。

    Solid-state imaging device having a light barrier layer
    4.
    发明授权
    Solid-state imaging device having a light barrier layer 失效
    具有遮光层的固态成像装置

    公开(公告)号:US5351081A

    公开(公告)日:1994-09-27

    申请号:US173955

    申请日:1993-12-23

    CPC分类号: H01L31/02164 H01L27/14831

    摘要: A solid-state imaging device in which a light-barrier layer is formed on transfer electrodes on top of a vertical pixel isolating region by an insulating film. The light-barrier layer is adapted to overlie the lateral sides of the transfer electrodes and the peripheral region of a photosensor region neighboring on the vertical pixel isolating region. By provision of the light-barrier layer, the light incident on the vertical pixel isolating region is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section.

    摘要翻译: 一种固体摄像器件,其中通过绝缘膜在垂直像素隔离区顶部的转移电极上形成光阻层。 光阻层适于覆盖传输电极的横向侧面和与垂直像素隔离区域相邻的光电传感器区域的周边区域。 通过设置光阻层,停止入射在垂直像素隔离区域上的光以减少否则可能侵入垂直电荷转移部分的拖尾电荷。

    PRODUCTION METHOD OF ALIPHATIC POLYESTER
    5.
    发明申请
    PRODUCTION METHOD OF ALIPHATIC POLYESTER 有权
    水性聚酯的生产方法

    公开(公告)号:US20110028678A1

    公开(公告)日:2011-02-03

    申请号:US12935121

    申请日:2009-03-23

    IPC分类号: C08G63/02

    CPC分类号: C08G63/78 C08G63/16

    摘要: An object of the present invention is to provide a method for efficient continuous production of aliphatic polyester having good quality. The invention relates to a continuous production method of aliphatic polyester, wherein the polyester is obtained through a preparation step of slurry containing aliphatic dicarboxylic acid and aliphatic diol, an esterification reaction step and a polycondensation reaction step, wherein temperature range of the slurry during the preparation step thereof is from the coagulation point of the aliphatic diol to 80° C., and moisture content in the slurry is from 0.01 to 10% by weight.

    摘要翻译: 本发明的目的是提供一种高效连续生产具有良好质量的脂族聚酯的方法。 本发明涉及脂肪族聚酯的连续制造方法,其中,通过制备含有脂族二羧酸和脂肪族二醇的浆料的制备步骤得到聚酯,酯化反应步骤和缩聚反应步骤,其中在制备过程中浆料的温度范围 其步骤是从脂族二醇的凝固点至80℃,浆料中的水分含量为0.01至10重量%。

    Production method of aliphatic polyester
    6.
    发明授权
    Production method of aliphatic polyester 有权
    脂肪族聚酯的生产方法

    公开(公告)号:US08344093B2

    公开(公告)日:2013-01-01

    申请号:US12935121

    申请日:2009-03-23

    IPC分类号: C08G63/16 C08G63/02

    CPC分类号: C08G63/78 C08G63/16

    摘要: An object of the present invention is to provide a method for efficient continuous production of aliphatic polyester having good quality. The invention relates to a continuous production method of aliphatic polyester, wherein the polyester is obtained through a preparation step of slurry containing aliphatic dicarboxylic acid and aliphatic diol, an esterification reaction step and a polycondensation reaction step, wherein temperature range of the slurry during the preparation step thereof is from the coagulation point of the aliphatic diol to 80° C., and moisture content in the slurry is from 0.01 to 10% by weight.

    摘要翻译: 本发明的目的是提供一种高效连续生产具有良好质量的脂族聚酯的方法。 本发明涉及脂肪族聚酯的连续制造方法,其中,通过制备含有脂族二羧酸和脂肪族二醇的浆料的制备步骤得到聚酯,酯化反应步骤和缩聚反应步骤,其中在制备过程中浆料的温度范围 其步骤是从脂肪族二醇的凝固点至80℃,浆料中的水分含量为0.01〜10重量%。

    Polyamide resin composition and film produced from the same
    7.
    发明授权
    Polyamide resin composition and film produced from the same 失效
    聚酰胺树脂组合物及其制备的薄膜

    公开(公告)号:US06313209B2

    公开(公告)日:2001-11-06

    申请号:US09785796

    申请日:2001-02-16

    IPC分类号: C08K334

    摘要: The present invention relates to a polyamide resin composition comprising 100 parts by weight of a polyamide resin and 0.001 to 2 parts by weight of at least two kinds of fillers having different average particle sizes from each other, an average particle size of a filler having minimum average particle size in said at least two kinds of fillers being 0.001 to 2 &mgr;m, an average particle size of a filler having maximum average particle size in said at least two kinds of fillers being more than 2 &mgr;m and not more than 15 &mgr;m, said at least two kinds of fillers having the following particle size distribution: (a) 20 to 90% by weight of a filler having a particle size of not more than 2 &mgr;m, (b) 0 to 15% by weight of a filler having a particle size of more than 2 &mgr;m and less than 3 &mgr;m, and (c) 10 to 80% by weight of a filler having a particle size of not less than 3 &mgr;m.

    摘要翻译: 本发明涉及一种聚酰胺树脂组合物,其包含100重量份的聚酰胺树脂和0.001至2重量份的彼此具有不同平均粒径的至少两种填料,平均粒径为最小的填料 所述至少两种填料中的平均粒径为0.001〜2μ​​m,所述至少2种填料中平均粒径最大的填料的平均粒径为2μm以上15μm以下, 至少两种具有以下粒度分布的填料:(a)20至90重量%的粒径不大于2μm的填料,(b)0至15重量%的填料具有 粒径大于2μm且小于3μm的粒子,和(c)10〜80重量%的粒径不小于3μm的填料。

    Friction device
    8.
    发明授权
    Friction device 失效
    摩擦装置

    公开(公告)号:US5323883A

    公开(公告)日:1994-06-28

    申请号:US29296

    申请日:1993-03-08

    摘要: An automotive disc brake assembly comprises a disc rotor made of graphite cast iron with a structure of pearlite, and a brake pad made of organic material. The disc rotor has a first thermal conductivity falling in a range from 0.090 to 0.140 cal/cm.sec..degree.C. The brake pad has second thermal conductivity falling in a range from 0.65 to 3.00 Kcal/mh.degree.C. The second thermal conductivity falls in a range from 0.65 to 0.98 Kcal/mh.degree.C. provided that the second thermal conductivity satisfies the following relationship with the first thermal conductivity:.lambda..sub.R .gtoreq.-0.152.times..lambda..sub.P +0.24where, .lambda..sub.R is first thermal conductivity, and .lambda..sub.P is the second thermal conductivity. The disc brake assembly is successful in improving heat check resistance ability which is substantially influenced by thermal conductivity of the disc rotor and the brake pad.

    摘要翻译: 一种汽车盘式制动器组件,包括由具有珠光体结构的石墨铸铁制成的圆盘转子和由有机材料制成的制动片。 圆盘转子的第一热传导率为0.090〜0.140cal / cm·sec。 制动片的第二热传导率在0.65-3.00Kcal / mh℃的范围内。第二热传导率在0.65至0.98Kcal / mh℃的范围内。只要第二导热系数满足 与第一热导率之间的关系:λR> = = 0.152×λP + 0.24其中,λR是第一热导率,λP是第二导热系数。 盘式制动器组件成功地提高了基本上受到盘式转子和制动衬块的导热性的影响的耐热检查能力。

    CCD imager
    9.
    发明授权
    CCD imager 失效
    CCD成像仪

    公开(公告)号:US5014132A

    公开(公告)日:1991-05-07

    申请号:US383179

    申请日:1989-07-21

    CPC分类号: H01L27/14831

    摘要: A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.