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公开(公告)号：US10600773B2
公开(公告)日：2020-03-24
申请号：US15445988
申请日：2017-03-01
IPC分类号： H01L25/065 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/00 , H01L25/18 , H01L23/31
摘要： A semiconductor device manufacturing method includes stacking a second semiconductor chip on a first surface of a first semiconductor chip such that the at bump electrode overlies the position of a first through silicon via in the first semiconductor chip, stacking a third semiconductor chip on the second semiconductor chip such that a second bump electrode on the second semiconductor chip overlies the position of a second through silicon via in the third semiconductor chip to form a chip stacked body, connecting the first and second bump electrodes of the chip stacked body to the first and the second through silicon vias by reflowing the bump material, placing the chip stacked body on the first substrate such that the first surface of the first semiconductor chip faces the second surface, and sealing the second surface and the first, second, and third semiconductor chips with a filling resin.
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公开(公告)号：US10903200B2
公开(公告)日：2021-01-26
申请号：US16793323
申请日：2020-02-18
IPC分类号： H01L21/77 , H01L25/065 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/00 , H01L25/18 , H01L23/31
摘要： A semiconductor device manufacturing method includes stacking a second semiconductor chip on a first surface of a first semiconductor chip such that the at bump electrode overlies the position of a first through silicon via in the first semiconductor chip, stacking a third semiconductor chip on the second semiconductor chip such that a second bump electrode on the second semiconductor chip overlies the position of a second through silicon via in the third semiconductor chip to form a chip stacked body, connecting the first and second bump electrodes of the chip stacked body to the first and the second through silicon vias by reflowing the bump material, placing the chip stacked body on the first substrate such that the first surface of the first semiconductor chip faces the second surface, and sealing the second surface and the first, second, and third semiconductor chips with a filling resin.
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公开(公告)号：US10217676B2
公开(公告)日：2019-02-26
申请号：US15233914
申请日：2016-08-10
发明人： Shinya Fukayama , Naoyuki Komuta , Hiroshi Watabe
摘要： A method for manufacturing a semiconductor device including a plurality of semiconductor chips includes steps of placing, on a first semiconductor chip, a second semiconductor chip, such that a plurality of bumps is located between the first semiconductor chip and the second semiconductor chip, determining a distance between the first semiconductor chip and the second semiconductor chip, and determining whether or not the distance is within a predetermined range and stopping placement of additional chips if the distance is determined to be outside the predetermined range.
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公开(公告)号：US10854576B2
公开(公告)日：2020-12-01
申请号：US15694838
申请日：2017-09-03
发明人： Yuji Karakane , Masatoshi Fukuda , Soichi Homma , Masayuki Miura , Naoyuki Komuta , Yuka Akahane , Yukifumi Oyama
IPC分类号： H01L21/225 , H01L25/065 , H01L23/29 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/498 , H01L21/768 , H01L23/31
摘要： A semiconductor device includes a wiring substrate having a first surface, a stacked body on the first surface, the stacked body comprising a first chip, a second chip having a through via and positioned between the first chip and the first surface, and a third chip, a first resin contacting the first surface and the third chip, and a second resin sealing the stacked body. The first and second resins are made of different materials.
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公开(公告)号：US10090273B2
公开(公告)日：2018-10-02
申请号：US14636168
申请日：2015-03-02
发明人： Naoyuki Komuta
摘要： A manufacturing apparatus of a semiconductor device includes a stage, a head unit configured to face the stage, a driving unit configured to move the head unit towards and away from the stage, a heating unit configured to heat the head unit, and a control unit configured to control the driving unit to move the head unit away from the stage when the heating unit heats the head unit.
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6.发明授权公开(公告)号：US09960143B2
公开(公告)日：2018-05-01
申请号：US15253878
申请日：2016-09-01
发明人： Soichi Homma , Naoyuki Komuta
IPC分类号： H01L23/00 , H01L21/66 , H01L25/065 , H01L25/00
CPC分类号： H01L24/81 , H01L22/20 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/75 , H01L25/0657 , H01L25/50 , H01L2224/02379 , H01L2224/03828 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05569 , H01L2224/1181 , H01L2224/11849 , H01L2224/13026 , H01L2224/131 , H01L2224/1403 , H01L2224/16146 , H01L2224/16147 , H01L2224/16227 , H01L2224/17181 , H01L2224/32145 , H01L2224/73207 , H01L2224/75251 , H01L2224/75252 , H01L2224/75744 , H01L2224/75745 , H01L2224/75753 , H01L2224/75804 , H01L2224/75824 , H01L2224/75901 , H01L2224/81011 , H01L2224/81024 , H01L2224/81048 , H01L2224/81121 , H01L2224/8118 , H01L2224/81191 , H01L2224/81205 , H01L2224/81206 , H01L2224/81207 , H01L2224/81815 , H01L2224/81906 , H01L2224/81948 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/3656 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
摘要： A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.
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