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    PATTERN FORMATION METHOD
    1.
    发明申请
    PATTERN FORMATION METHOD 审中-公开

    公开(公告)号：US20190121232A1

    公开(公告)日：2019-04-25

    申请号：US16101547

    申请日：2018-08-13

    Applicant: Toshiba Memory Corporation

    Inventor： Tomoaki SAWABE ,  Shinobu Sugimura ,  Koji Asakawa

    IPC: G03F7/00 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/027 ,  G03F7/075 ,  C09C1/30 ,  C03C17/22 ,  C03C17/30

    Abstract: According to one embodiment, a pattern formation method can include performing a first processing of causing a surface of a first member of a processing body to be hydrophobic. The processing body includes the first member and a second member. The second member is provided at a portion of the first member. The method can include performing a second processing of causing the processing body to contact an atmosphere including a metal compound. The second processing is after the first processing. The method can include performing a third processing of processing the processing body in an atmosphere including at least one selected from the group consisting of water, oxygen, and ozone. The third processing is after the second processing. In addition, the method can include removing, after the third processing, at least a portion of another portion of the first member by using the second member as a mask.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200013892A1

    公开(公告)日：2020-01-09

    申请号：US16351245

    申请日：2019-03-12

    Applicant: Toshiba Memory Corporation

    Inventor： Junji KATAOKA ,  Tomomasa UEDA ,  Tomoaki SAWABE ,  Keiji IKEDA ,  Nobuyoshi SAITO

    IPC: H01L29/786 ,  H01L29/24 ,  H01L45/00

    Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer and a first layer. The semiconductor layer includes a first portion including a first element and oxygen. The first element includes at least one selected from the group consisting of In, Ga, Zn, Al, Sn, Ti, Si, Ge, Cu, As, and W. The first layer includes a second element including at least one selected from the group consisting of W, Ti, Ta, Mo, Cu, Al, Ag, Hf, Au, Pt, Pd, Ru, Y, V, Cr, Ni, Nb, In, Ga, Zn, and Sn. The first portion includes a first region and a second region. The second region is provided between the first region and the first layer. The first region includes a bond of the first element and oxygen. The second region includes a bond of the first element and a metallic element.

    PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD
    3.
    发明申请
    PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD 审中-公开

    公开(公告)号：US20190086805A1

    公开(公告)日：2019-03-21

    申请号：US15919443

    申请日：2018-03-13

    Applicant: TOSHIBA MEMORY CORPORATION

    Inventor： Koji ASAKAWA ,  Naoko KIHARA ,  Seekei LEE ,  Norikatsu SASAO ,  Tomoaki SAWABE ,  Shinobu SUGIMURA

    IPC: G03F7/038 ,  G03F7/26

    Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

    SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 审中-公开

    公开(公告)号：US20200303554A1

    公开(公告)日：2020-09-24

    申请号：US16563307

    申请日：2019-09-06

    Applicant: TOSHIBA MEMORY CORPORATION

    Inventor： Tomoaki SAWABE ,  Nobuyoshi SAITO ,  Junji KATAOKA ,  Tomomasa UEDA ,  Keiji IKEDA

    IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/49

    Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, an oxide semiconductor channel, an insulation layer, an oxide layer, and a gate electrode. The oxide semiconductor channel includes a portion extending along a first direction and connects the first electrode to the second electrode. The insulation layer surrounds the oxide semiconductor channel. The oxide layer covers the oxide semiconductor channel and the insulation layer, and includes an oxide of a metal element. The gate electrode covers the oxide semiconductor channel, the insulation layer, and the oxide layer, and includes the metal element.

    PATTERN FORMATION METHOD
    5.
    发明申请
    PATTERN FORMATION METHOD 审中-公开

    公开(公告)号：US20180138048A1

    公开(公告)日：2018-05-17

    申请号：US15703127

    申请日：2017-09-13

    Applicant: Toshiba Memory Corporation

    Inventor： Tomoaki SAWABE ,  Shinobu SUGIMURA ,  Koji ASAKAWA

    IPC: H01L21/308 ,  H01L21/027 ,  G03F7/00

    Abstract: According to one embodiment, a pattern formation method includes forming a structure body on a first surface of a patterning member, the structure body having protrusions and a recess. The protrusions are arranged at a first pitch along a first direction. The first direction is aligned with the first surface. The recess is between the protrusions. The method further includes forming a resin film of a block copolymer on the structure body. The block copolymer includes first portions and second portions. The first and second portions are arranged alternately at a second pitch along the first direction. The structure body includes first and second regions. The first portions are on the first regions. The second portions on the second regions. The method further includes removing the second portions and the second regions, introducing a metal to the first regions, and etching the patterning member using the first regions.

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