公开(公告)号：US07875883B2

公开(公告)日：2011-01-25

申请号：US10490598

申请日：2002-09-24

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

IPC分类号： H01L29/06

CPC分类号： G11C13/0011 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/16 ,  H01L45/1633

摘要： The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

摘要翻译： 本发明涉及用于选择存储单元的晶体管和使用固体电解质的开关。 在存储单元中，在形成在半导体衬底表面上的场效应晶体管的漏极扩散层上堆叠金属。 使用金属作为载体的固体电解质堆叠在金属上。 固体电解质通过间隙与金属接触，并且金属连接到公共接地导体。 场效应晶体管的源极连接到列地址线，并且场效应晶体管的栅极连接到行地址线。

公开(公告)号：US20060157802A1

公开(公告)日：2006-07-20

申请号：US10490598

申请日：2002-09-24

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonbu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonbu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

IPC分类号： H01L29/76

CPC分类号： G11C13/0011 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/16 ,  H01L45/1633

摘要： The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

摘要翻译： 本发明涉及用于选择存储单元的晶体管和使用固体电解质的开关。 在存储单元中，在形成在半导体衬底表面上的场效应晶体管的漏极扩散层上堆叠金属。 使用金属作为载体的固体电解质堆叠在金属上。 固体电解质通过间隙与金属接触，并且金属连接到公共接地导体。 场效应晶体管的源极连接到列地址线，并且场效应晶体管的栅极连接到行地址线。

公开(公告)号：US20050127524A1

公开(公告)日：2005-06-16

申请号：US10512571

申请日：2003-04-25

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

IPC分类号： G11C13/02 ,  H01L27/10 ,  H01L45/00 ,  H01L21/8238 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same. A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

公开(公告)号：US07750332B2

公开(公告)日：2010-07-06

申请号：US10512571

申请日：2003-04-25

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

IPC分类号： H01L47/00

CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

公开(公告)号：US20050014325A1

公开(公告)日：2005-01-20

申请号：US10918360

申请日：2004-08-16

申请人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

发明人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

IPC分类号： G11C11/56 ,  G11C13/02 ,  G11C16/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/24 ,  H01L29/26 ,  H01L29/45 ,  H01L51/00 ,  H01L51/30 ,  H03K19/02 ,  H01L21/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5614 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/0011 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/2463 ,  H01L29/242 ,  H01L29/26 ,  H01L29/45 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/1633 ,  H03K17/545 ,  H03K19/02

摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.

摘要翻译： 使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

公开(公告)号：US20050243844A1

公开(公告)日：2005-11-03

申请号：US11165037

申请日：2005-06-24

申请人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

发明人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

IPC分类号： G11C11/56 ,  G11C13/02 ,  G11C16/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/24 ,  H01L29/26 ,  H01L29/45 ,  H01L51/00 ,  H01L51/30 ,  H03K19/02 ,  H04L12/28 ,  H04L12/56

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5614 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/0011 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/2463 ,  H01L29/242 ,  H01L29/26 ,  H01L29/45 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/1633 ,  H03K17/545 ,  H03K19/02

摘要： There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0

摘要翻译： 提供了一种点接触阵列，其中布置有多个点触点，每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路，逻辑电路和存储器件，NOT电路和 使用该电路的电子电路。 电路包括多个点接点，每个点接触由由具有离子导电性和电子传导性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。 控制每个点接触的电导以实现电路。 优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物 导电材料。 当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或 优选使用WO x（0

公开(公告)号：US07473982B2

公开(公告)日：2009-01-06

申请号：US10918360

申请日：2004-08-16

申请人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

发明人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

IPC分类号： H01L27/24

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5614 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/0011 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/2463 ,  H01L29/242 ,  H01L29/26 ,  H01L29/45 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/1633 ,  H03K17/545 ,  H03K19/02

摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.

摘要翻译： 使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

公开(公告)号：US07026911B2

公开(公告)日：2006-04-11

申请号：US10363259

申请日：2001-10-29

申请人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

发明人： Masakazu Aono ,  Tsuyoshi Hasegawa ,  Kazuya Terabe ,  Tomonobu Nakayama

IPC分类号： H01C1/012

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5614 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/0011 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/2463 ,  H01L29/242 ,  H01L29/26 ,  H01L29/45 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/1633 ,  H03K17/545 ,  H03K19/02

摘要： A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0

摘要翻译： 一种点接触阵列，包括多个点接点，电和可逆地控制电极之间的电导，并且可应用于运算电路，逻辑电路，存储器件，NOT电路和包括其的电子电路。 该电路包括多个点接点，每个接点包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 控制每个点接触的电导以实现电路。 优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物 导电材料。 当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或 优选使用WO x（0

公开(公告)号：US06891186B2

公开(公告)日：2005-05-10

申请号：US10363479

申请日：2001-08-30

申请人： Masakazu Aono ,  Kazuya Terabe ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama

发明人： Masakazu Aono ,  Kazuya Terabe ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama

IPC分类号： H01L29/06 ,  G11C13/02 ,  H01L29/80 ,  H01L45/00 ,  H01L49/00 ,  H01L21/44

CPC分类号： H01L45/1266 ,  G11C13/02 ,  H01L45/085 ,  H01L45/1226 ,  H01L49/006

摘要： This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode. In a third aspect, this invention is a method of controlling inter-electrode conductance comprising at least one of applying a voltage between the electrodes of the above electronic element so that the second electrode is negative with respect to the first electrode so that a bridge is formed between the electrodes due to the migration of movable ions from the first electrode to the second electrode, and reversing the inter-electrode polarity so that the bridge is thinned or disconnected.

摘要翻译： 本发明提供一种用于构造包括精细线或点接触的桥的方法，其产生电化学电极间的电导率，并且提供了一种容易控制该桥的电导的方法。 此外，其目的在于提供一种电子元件，其由于在电极之间形成的桥，细线或点接触而使用电导控制。 这些目的是通过电子元件实现的，该电子元件包括具有离子传导性和电子传导性的混合导电材料的第一电极和包含导电物质的第二电极，其中可以控制电导率。 在另一方面，本发明是通过在电极之间的桥接形成的电子元件，通过在电极之间施加电压使得第二电极相对于第一电极为负极，并且可移动离子从第一电极迁移到第二电极。 在第三方面，本发明是一种控制电极间电导的方法，包括以下步骤中的至少一种：在上述电子元件的电极之间施加电压，使得第二电极相对于第一电极为负极， 由于可移动离子从第一电极迁移到第二电极而形成在电极之间，并且使电极间极性反转，使得桥变薄或断开。

公开(公告)号：US06833719B2

公开(公告)日：2004-12-21

申请号：US10148900

申请日：2002-06-19

申请人： Tsuyoshi Hasegawa ,  Masakazu Aono ,  Tomonobu Nakayama ,  Taichi Okuda ,  Kazuya Terabe ,  Hirofumi Tanaka

发明人： Tsuyoshi Hasegawa ,  Masakazu Aono ,  Tomonobu Nakayama ,  Taichi Okuda ,  Kazuya Terabe ,  Hirofumi Tanaka

IPC分类号： G01R3102

CPC分类号： G01Q60/40 ,  G01Q60/04 ,  G01R1/06727 ,  G01R1/06738 ,  Y10S977/874

摘要： An apparatus provided for evaluating electrical characteristics by bringing a plurality of metal probes in contact with a sample. A metal probe is formed on a free end of a cantilever on which are formed a resistor, two electrodes for resistance detection, and an electrode for measuring electrical characteristics. A tip of the metal probe projects beyond the free end of the cantilever. The probe position is controlled by an atomic force microscopy.

摘要翻译： 一种用于通过使多个金属探针与样品接触来评估电特性的装置。 金属探针形成在悬臂的自由端上，其上形成电阻器，两个用于电阻检测的电极和用于测量电特性的电极。 金属探针的尖端超出悬臂的自由端。 探针位置由原子力显微镜控制。