公开(公告)号：US5097358A

公开(公告)日：1992-03-17

申请号：US514225

申请日：1990-04-25

申请人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Masanobu Senda ,  Takahiko Asaoka

发明人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Masanobu Senda ,  Takahiko Asaoka

IPC分类号： G02F1/15

CPC分类号： G02F1/1523

摘要： An electrochromic element comprising a pair of electrode films, at least one of which is a transparent electrode film, a color forming film laminated between both the electrode films and an electrolyte. The color forming film is formed on the electrode film by depositing thereon a conductive metal oxide such as indium oxide and tungsten oxide. The depositing ratio of tungsten oxide and indium oxide preferably is within the range of 10:1 to 3:1 by weight ratio.

摘要翻译： 一种电致变色元件，包括一对电极膜，其中至少一个是透明电极膜，层压在两个电极膜和电解质之间的成色膜。 通过在其上沉积诸如氧化铟和氧化钨的导电金属氧化物，在电极膜上形成彩色形成膜。 氧化钨和氧化铟的沉积比优选在10:1至3:1的重量比范围内。

公开(公告)号：US5015075A

公开(公告)日：1991-05-14

申请号：US313478

申请日：1989-02-22

申请人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Masanobu Senda

发明人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Masanobu Senda

IPC分类号： G02F1/17 ,  G02F1/163

CPC分类号： G02F1/163

摘要： An electrochromic element including a color-forming film and an electrolyte sandwiched between a pair of substrates each having a electrode film. Each electrode film is divided into a plurality of electrode pieces with micro grooves. One of the electrode films has its electrode pieces intersected with the electrode pieces of the other film so as to define a plurality of pairs of facing surfaces at intersecting portions. Resistors are connected between each of the electrode pieces and a power source to equalize values of current flowing between each of the pairs of the facing surfaces. The resistor may be an ordinary one, or resistance film made of conductive material, or a projected portion projecting from a longitudinal end of the electrode piece. A predetermined shape of cut-out is formed on the projected portion.

摘要翻译： 一种电致变色元件，包括成色膜和夹在一对基板之间的电解质，每个基板均具有电极膜。 每个电极膜被分成多个具有微槽的电极片。 一个电极膜的电极片与另一个膜的电极片相交，从而在交叉部分形成多对面对面。 电阻器连接在每个电极片和电源之间，以均衡在每对相对表面之间流动的电流的值。 电阻器可以是普通的电阻器，或由导电材料制成的电阻膜，或从电极片的纵向端突出的突出部分。 在突出部分上形成预定形状的切口。

公开(公告)号：US5173146A

公开(公告)日：1992-12-22

申请号：US722507

申请日：1991-06-27

申请人： Toshiyasu Ito ,  Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Shigeyuki Takahashi ,  Masanobu Senda

发明人： Toshiyasu Ito ,  Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Shigeyuki Takahashi ,  Masanobu Senda

IPC分类号： B29C59/14

CPC分类号： B29C59/14 ,  B29C2037/903

摘要： Method and apparatus for improving the surface quality of a resin molding by treating it with a plasma gas, measuring and integrating ion density and stopping the treatment when the integration reaches a predetermined value.

摘要翻译： 通过用等离子体气体处理来提高树脂成形体的表面质量的方法和装置，测量和积分离子密度并在积分达到预定值时停止处理。

公开(公告)号：US5064679A

公开(公告)日：1991-11-12

申请号：US572624

申请日：1990-08-27

申请人： Toshiyasu Ito ,  Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Shigeyuki Takahashi ,  Masanobu Senda

发明人： Toshiyasu Ito ,  Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Shigeyuki Takahashi ,  Masanobu Senda

IPC分类号： C08J7/00 ,  B01J19/08 ,  B29C59/14

CPC分类号： B29C59/14 ,  B29C2037/903

摘要： Method and apparatus for improving the surface quality of a resin molding by treating it with a plasma gas, measuring and integrating ion density and stopping the treatment when the integration reaches a predetermined value.

摘要翻译： 通过用等离子体气体处理来提高树脂成形体的表面质量的方法和装置，测量和积分离子密度并在积分达到预定值时停止处理。

公开(公告)号：US20070246736A1

公开(公告)日：2007-10-25

申请号：US11785248

申请日：2007-04-16

申请人： Masanobu Senda ,  Naoki Arazoe

发明人： Masanobu Senda ,  Naoki Arazoe

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A light emitting element has a well layer formed of a GaN-based semiconductor, a barrier layer next to the well layer, the barrier layer being formed of a GaN-based semiconductor, and a GaN-based semiconductor layer formed between the well layer and the barrier layer. The GaN-based semiconductor layer has a dopant to cancel a piezoelectric field caused between the well layer and the barrier layer.

摘要翻译： 发光元件具有由GaN基半导体形成的阱层，阱层旁边的势垒层，由GaN系半导体形成的阻挡层，以及形成于阱层与GaN基半导体层之间的GaN系半导体层 阻挡层。 GaN基半导体层具有消除在阱层和阻挡层之间引起的压电场的掺杂剂。

公开(公告)号：US07042012B2

公开(公告)日：2006-05-09

申请号：US10515655

申请日：2003-04-18

申请人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

发明人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

IPC分类号： H01L27/15

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/44

摘要： An insulation film 150 made of SiO2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

摘要翻译： 在p型层106上形成由SiO 2构成的绝缘膜150，并且在绝缘膜上形成作为通过金属沉积形成的金属膜的多重厚膜正极120 并且在其中心部分具有窗口并露出的p型层106上。 绝缘膜150具有发射波长的四分之一倍的厚度。 绝缘膜150的厚度通常通过将四分之一的内部发射波长乘以奇数来确定。 通过干涉效应，可以提高辐射光沿光轴方向的方向性。

公开(公告)号：US06939733B2

公开(公告)日：2005-09-06

申请号：US10725380

申请日：2003-12-03

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

摘要翻译： 通过不使用金属有机化合物作为原料的方法在基板上形成的第一III族氮化物化合物层在含有氢或氮气和氨气的混合气体的气氛中加热，使得结晶度 形成在第一III族氮化物层上的第二III族氮化物化合物半导体层。 当通过溅射法在基板上形成第一III族氮化物化合物层时，第一III族氮化物化合物层的厚度被设定在从50到3000的范围内。

公开(公告)号：US5590887A

公开(公告)日：1997-01-07

申请号：US169666

申请日：1993-12-21

申请人： Masanobu Senda ,  Yasuhiko Ogisu ,  Toshikazu Funahashi

发明人： Masanobu Senda ,  Yasuhiko Ogisu ,  Toshikazu Funahashi

IPC分类号： F16J15/06 ,  F16J15/32

CPC分类号： F16J15/064 ,  F16J15/3236 ,  Y10S277/944

摘要： A sealing apparatus, which provides a seal between a metal surface and a member sliding along the metal surface is made of rubber material which contains a rubber polymer having alkyl lateral chains. At least a part of alkyl group hydrogen of rubber polymer in cortex is substituted from fluorine by plasma treatment. The plasma treatment reduces the noise which is normally present in device as of this type.

摘要翻译： 在金属表面和沿着金属表面滑动的构件之间提供密封的密封装置由含有具有烷基侧链的橡胶聚合物的橡胶材料制成。 皮质中橡胶聚合物的烷基氢的至少一部分由等离子体处理取代氟。 等离子体处理降低了通常存在于这种类型的装置中的噪声。

公开(公告)号：US06593016B1

公开(公告)日：2003-07-15

申请号：US09606081

申请日：2000-06-29

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： H01L2900

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US5985451A

公开(公告)日：1999-11-16

申请号：US819556

申请日：1997-03-17

申请人： Masanobu Senda ,  Yasuhiko Ogisu

发明人： Masanobu Senda ,  Yasuhiko Ogisu

IPC分类号： F16J15/10 ,  B60T11/236 ,  C09K3/10 ,  C23C16/26 ,  F16J3/02 ,  F16J15/32 ,  B32B9/00

CPC分类号： B60T11/236 ,  C23C16/26 ,  Y10S427/103 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056 ,  Y10T428/30 ,  Y10T428/31504 ,  Y10T428/31678

摘要： A master brake cylinder comprises a reservoir and a cylinder for generating fluid pressure. Provided in the cylinder is a sliding piston, and mounted to front and rear ends of piston are piston cups for sealing a gap between the piston and the cylinder. The piston cups comprise a substrate made of rubber and a coating layer made of diamond-like carbon and provided on an outer peripheral surface (sliding surface) of the substrate. A surface of the coating layer constitutes a sliding surface, and so a frictional resistance thereof relative to an inner peripheral surface of the cylinder, on which the coating layer slides, is made relatively low. The coating layer can easily follow deformation of the substrate and securely adheres to the substrate.

摘要翻译： 主制动缸包括容器和用于产生流体压力的气缸。 在气缸中设置有滑动活塞，并且安装到活塞的前端和后端是用于密封活塞和气缸之间的间隙的活塞杯。 活塞杯包括由橡胶制成的基材和由类金刚石碳制成的涂层，并且设置在基材的外周表面（滑动表面）上。 涂层的表面构成滑动面，因此其相对于涂覆层滑动的圆筒的内周面的摩擦阻力相对较低。 涂层可以容易地跟随基材的变形并牢固地粘附到基材上。