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公开(公告)号：US07123642B2
公开(公告)日：2006-10-17
申请号：US10789848
申请日：2004-02-27
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L2224/48463 , H01L2924/3025 , H01S5/02212 , H01S5/02252 , H01S5/02272 , H01S5/2231 , H01S5/3432 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2304/04 , H01L2924/00
摘要： A multi-wavelength laser device includes at least two of a blue laser diode, a red laser diode, and an infrared laser diode, which are arranged in the same direction on the same base. One laser light emission point is arranged behind another in increasing order of wavelengths of the laser diodes.
摘要翻译： 多波长激光器件包括蓝色激光二极管，红色激光二极管和红外激光二极管中的至少两个，它们在同一基底上沿相同的方向布置。 一个激光发射点以激光二极管的波长递增的次序布置在另一个之后。
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2.发明授权Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method 有权半导体激光芯片，半导体激光器件和半导体激光器芯片的制造方法公开(公告)号：US08861561B2
公开(公告)日：2014-10-14
申请号：US12926660
申请日：2010-12-02
申请人： Toshiyuki Kawakami , Akira Ariyoshi
发明人： Toshiyuki Kawakami , Akira Ariyoshi
CPC分类号： H01S5/34333 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/49111 , H01S5/0202 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/02461 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2214 , H01L2924/00014 , H01L2924/00
摘要： Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.
摘要翻译： 提供了更多的散热性能的半导体激光芯片。 该半导体激光器芯片包括形成在基板的前表面上的具有前表面和后表面的氮化物半导体层的基板，形成在氮化物半导体层中的光波导（脊部） 形成在基板的后表面上的n侧电极和形成在包括基板的区域中的切口部分沿着光波导（脊部）延伸。 切口部分形成有与n侧电极连接的金属层的切口表面。
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公开(公告)号：US07995632B2
公开(公告)日：2011-08-09
申请号：US12155186
申请日：2008-05-30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光器芯片中，为了抑制氮化物半导体层上的台阶的发展，基板具有（1-100）面作为主面，谐振器面垂直于主面，在切割 表面形成谐振器面，至少由条形波导的一侧形成蚀刻入蚀刻区域，以朝向氮化物半导体层的表面开口。
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公开(公告)号：US08170076B2
公开(公告)日：2012-05-01
申请号：US12982231
申请日：2010-12-30
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译： 在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面， 在其宽度方向夹着条形波导。 处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。
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公开(公告)号：US07724793B2
公开(公告)日：2010-05-25
申请号：US11605305
申请日：2006-11-29
CPC分类号： H01S5/227
摘要： At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.
摘要翻译： 在脊条110的每一侧，沟槽形成为相对于晶片表面雕刻的区域，使得在分裂时，在有源层附近的镜面处产生的表面不规则性被防止到达脊 条纹110。
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公开(公告)号：US20080304528A1
公开(公告)日：2008-12-11
申请号：US12155332
申请日：2008-06-03
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光装置中，为了抑制氮化物半导体层上的台阶的发展，基板具有（11-20）面作为主面，共振器端面垂直于主面，在 形成谐振器端面的解理面至少由条状波导的一侧形成为朝向氮化物半导体层的表面开口的蚀刻区域的蚀刻部分。
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公开(公告)号：US20070121692A1
公开(公告)日：2007-05-31
申请号：US11605305
申请日：2006-11-29
IPC分类号： H01S5/00
CPC分类号： H01S5/227
摘要： At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.
摘要翻译： 在脊条110的每一侧，沟槽形成为相对于晶片表面雕刻的区域，使得在分裂时，在有源层附近的镜面处产生的表面不规则性被防止到达脊 条纹110。
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公开(公告)号：US08358675B2
公开(公告)日：2013-01-22
申请号：US12801800
申请日：2010-06-25
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S3/097
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译： 提供了一种减小电容以获得更好响应的氮化物半导体激光器件。 氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。
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9.发明申请Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method 有权半导体激光芯片，半导体激光器件和半导体激光器芯片的制造方法公开(公告)号：US20110134948A1
公开(公告)日：2011-06-09
申请号：US12926660
申请日：2010-12-02
申请人： Toshiyuki Kawakami , Akira Ariyoshi
发明人： Toshiyuki Kawakami , Akira Ariyoshi
CPC分类号： H01S5/34333 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/49111 , H01S5/0202 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/02461 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2214 , H01L2924/00014 , H01L2924/00
摘要： Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.
摘要翻译： 提供了更多的散热性能的半导体激光芯片。 该半导体激光器芯片包括形成在基板的前表面上的具有前表面和后表面的氮化物半导体层的基板，形成在氮化物半导体层中的光波导（脊部） 形成在基板的后表面上的n侧电极和形成在包括基板的区域中的切口部分沿着光波导（脊部）延伸。 切口部分形成有与n侧电极连接的金属层的切口表面。
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公开(公告)号：US07928460B2
公开(公告)日：2011-04-19
申请号：US12314214
申请日：2008-12-05
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0281 , H01S5/0282 , H01S5/2201 , H01S5/34333
摘要： In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
摘要翻译： 在使用六方晶体结构的氮化物半导体的激光芯片1中，使用-c面作为第一谐振器面A，其是发射光的激光芯片1的一侧。 在第一谐振器面A上，即在-c平面上形成刻面保护膜14。 这确保了第一谐振器面A和小面保护膜14之间的牢固的接合，并且减轻了第一谐振器面A的劣化。
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