公开(公告)号：US5337326A

公开(公告)日：1994-08-09

申请号：US953458

申请日：1992-09-29

申请人： Yasuo Kan ,  Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Kentaro Tani ,  Masanori Watanabe

发明人： Yasuo Kan ,  Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Kentaro Tani ,  Masanori Watanabe

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/32325

摘要： A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.

摘要翻译： 半导体激光装置包括：基板; 形成在基板的上表面上的具有n型包覆层，有源层和p型覆层的双异质结构; 以及形成在所述基板的下表面上和所述双异质结构的上表面上的电极，其中所述双异质结构还包括形成在所述p型覆层和所述有源层之间的p型异质势垒层， 由于晶格失配而被压缩而变形。

公开(公告)号：US5310697A

公开(公告)日：1994-05-10

申请号：US993058

申请日：1992-12-18

申请人： Yasuo Kan ,  Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Kentaro Tani

发明人： Yasuo Kan ,  Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Kentaro Tani

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/323 ,  H01L21/20

CPC分类号： H01S5/32325 ,  H01L33/0062 ,  H01S5/2231 ,  Y10S148/017 ,  Y10S438/974

摘要： A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.

摘要翻译： 一种制造具有衬底的AlGaInP半导体发光器件的方法和包括在衬底上形成的AlGaInP第一半导体层的多层结构。 该方法包括以下步骤：去除部分多层结构，使得第一半导体层被暴露，用等离子体束照射形成在暴露的第一半导体层上的氧化膜，衬底温度保持在500℃或更低，因此 从第一半导体层去除氧化膜并在第一半导体层上生长第二半导体层。

公开(公告)号：US5360762A

公开(公告)日：1994-11-01

申请号：US080004

申请日：1993-06-21

申请人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

发明人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/105 ,  H01L31/1844 ,  H01L33/0062 ,  H01S5/2231 ,  H01S2304/02 ,  H01S5/0421 ,  H01S5/209 ,  H01S5/3211 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/095

摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

摘要翻译： 在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。 通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。 由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

公开(公告)号：US5027169A

公开(公告)日：1991-06-25

申请号：US531386

申请日：1990-06-01

申请人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Masafumi Kondo ,  Takahiro Suyama

发明人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Masafumi Kondo ,  Takahiro Suyama

IPC分类号： H01L21/203 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/045 ,  H01L33/0062 ,  H01L33/06

摘要： A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

公开(公告)号：US5255279A

公开(公告)日：1993-10-19

申请号：US698001

申请日：1991-05-09

申请人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

发明人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/105 ,  H01L31/1844 ,  H01L33/0062 ,  H01S5/2231 ,  H01S2304/02 ,  H01S5/0421 ,  H01S5/209 ,  H01S5/3211 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/095

摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

公开(公告)号：US06738402B1

公开(公告)日：2004-05-18

申请号：US09499027

申请日：2000-02-07

申请人： Masahiro Hosoda ,  Tadashi Takeoka ,  Atsuo Tsunoda

发明人： Masahiro Hosoda ,  Tadashi Takeoka ,  Atsuo Tsunoda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L2224/48463 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an oscillation wavelength in an infrared region and a semiconductor laser resonator having an oscillation wavelength in a red region are formed in parallel on the same semiconductor substrate.

摘要翻译： 通过使用单个半导体激光器件，在近光发射点之间的距离处产生红外和红色区域中的激光束。 在同一半导体衬底上平行地形成具有红外区域中的振荡波长的半导体激光谐振器和具有红色区域的振荡波长的半导体激光谐振器。

公开(公告)号：US4426132A

公开(公告)日：1984-01-17

申请号：US500804

申请日：1983-06-07

申请人： Atsuo Tsunoda ,  Koyo Midorikawa ,  Hidetoshi Murase ,  Mikio Suzuta ,  Masazumi Moriwaki ,  Noritaka Mochizuki ,  Setsuo Minami ,  Yoshiya Matsui

发明人： Atsuo Tsunoda ,  Koyo Midorikawa ,  Hidetoshi Murase ,  Mikio Suzuta ,  Masazumi Moriwaki ,  Noritaka Mochizuki ,  Setsuo Minami ,  Yoshiya Matsui

IPC分类号： G03B27/50 ,  G02B3/00 ,  G02B7/00 ,  G02B27/18 ,  G03B27/52

CPC分类号： G02B3/0062 ,  G03B27/525 ,  G02B3/0012 ,  G02B3/0056 ,  G02B3/0068

摘要： A projecting device is disclosed which has plural element lens systems arranged in at least two rows in a staggered fashion in two grooved blocks, with one row displaced relative to the adjacent row by a distance equal to half the pitch of the adjacent row. Each lens system is composed of at least one bar lens for imaging a part of the object as a part of the corresponding image. An opaque elastomer material fills the space between the rows for preventing light from entering into the space while allowing the positional relation between the rows to be fine-adjusted.

摘要翻译： 公开了一种投影装置，其具有多个元件透镜系统，其以交错的方式布置在至少两行中的两个凹槽块中，一行相对于相邻行移位等于相邻行的间距的一半的距离。 每个透镜系统由至少一个条形透镜组成，用于将物体的一部分成像为相应图像的一部分。 不透明的弹性体材料填充行之间的空间，以防止光进入空间，同时允许行之间的位置关系被微调。

公开(公告)号：US4368975A

公开(公告)日：1983-01-18

申请号：US240835

申请日：1981-03-05

申请人： Yoshiya Matsui ,  Setsuo Minami ,  Noritaka Mochizuki ,  Isao Harumoto ,  Atsuo Tsunoda ,  Shiro Hirai ,  Masami Ohkubo

发明人： Yoshiya Matsui ,  Setsuo Minami ,  Noritaka Mochizuki ,  Isao Harumoto ,  Atsuo Tsunoda ,  Shiro Hirai ,  Masami Ohkubo

IPC分类号： G03B27/50 ,  G02B3/00 ,  G02B13/22 ,  G02B13/24 ,  G02B27/18 ,  G03G15/04 ,  G03G15/047 ,  G03B27/48

CPC分类号： G02B13/24 ,  G02B13/22 ,  G02B3/00

摘要： This specification discloses a projection device in which a plurality of element lens systems for projecting a part area of an object onto a predetermined part area on the image plane at erect one-to-one magnification are arranged parallel to one another in a plane perpendicular to the optical axis. Each element lens system is a telecentric system comprising three thin lenses of the same shape arranged in the direction of the optical axis, and an intermediate lens is provided at a position deviated from the intermediate point between the object side lens and the image plane side lens. A light absorbing member for extinguishing any light rays exceeding the effective lens diameter is provided between the lenses, and the light intensity distribution on the image plane of each element lens system is controlled substantially to Gauss distribution form by aperture eclipse and, even if there is any error in the arrangement interval, the exposure amount distribution in the arrangement direction superposed on the image plane is uniform.

摘要翻译： 本说明书公开了一种投影装置，其中用于将物体的一部分区域以直立的一对一放大率在像面上的预定部分区域投影的多个元件透镜系统在垂直于...的平面中彼此平行地布置 光轴。 每个元件透镜系统是一种远心系统，包括沿光轴方向布置的相同形状的三个薄透镜，并且在偏离物侧透镜和像平面侧透镜之间的中间点的位置处设置中间透镜 。 在透镜之间设置用于熄灭超过有效透镜直径的光线的光吸收部件，并且每个元件透镜系统的像面上的光强度分布基本上由孔眼日蚀控制为高斯分布形式，并且即使存在 布置间隔中的任何误差，叠加在图像平面上的排列方向上的曝光量分布是均匀的。

公开(公告)号：US20060094141A1

公开(公告)日：2006-05-04

申请号：US11262548

申请日：2005-10-28

申请人： Atsuo Tsunoda ,  Akiyoshi Sugahara

发明人： Atsuo Tsunoda ,  Akiyoshi Sugahara

IPC分类号： H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/34326

摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.

摘要翻译： 提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。 通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分 除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子 防止效率。

公开(公告)号：US20050100067A1

公开(公告)日：2005-05-12

申请号：US10602827

申请日：2003-06-25

申请人： Atsuo Tsunoda

发明人： Atsuo Tsunoda

IPC分类号： H01S5/227 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/173 ,  H01S2304/02

摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.

摘要翻译： 在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。 通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。 通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。 因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。