公开(公告)号：US4968374A

公开(公告)日：1990-11-06

申请号：US359817

申请日：1989-06-01

申请人： Tsutomu Tsukada ,  Toshio Tamaki ,  Tatsuhiko Yoshida

发明人： Tsutomu Tsukada ,  Toshio Tamaki ,  Tatsuhiko Yoshida

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01J37/32541

摘要： A dry etching apparatus has a vacuum chamber provided therein with an RF electrode. On the RF electrode an object substrate(s) is placed. The RF electrode is covered with a substrate bed(s) and detachable dielectric members. The substrate bed(s) includes a dielectric portion and a conductive portion provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. At least one gap extension is consituted of a gap(s) between the dielectric members, a gap(s) between the dielectric members and the substrate bed(s), etc. and extends from the surface of the RF electrode to the plasma space. The gap extension(s) extends zigzaggedly from the RF electrode to the plasma space so that the plasma space can not structurally be viewed from the surface of the RF electrode irrespective the dimesions of the substrate. To the RF electrode is applied a negative DC voltage having larger absolute value than that of a negative self-bias voltage at the object substrate(s) induced by plasma discharge.

公开(公告)号：US4816638A

公开(公告)日：1989-03-28

申请号：US110253

申请日：1987-10-20

申请人： Katsumi Ukai ,  Tsutomu Tsukada ,  Kouji Ikeda ,  Toshio Adachi

发明人： Katsumi Ukai ,  Tsutomu Tsukada ,  Kouji Ikeda ,  Toshio Adachi

IPC分类号： H01L21/302 ,  H01J37/18 ,  H01L21/3065 ,  H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67751 ,  H01J37/185

摘要： A vacuum processing apparatus comprising a load-lock chamber, a vacuum transferring chamber and a processing chamber respectively having evacuating systems for evacuating the respective chambers. The load-lock chamber has a first isolation valve for isolating and opening communication of the load-lock chamber with the atmosphere and a second isolating valve for isolating and opening communication of the load-lock chamber with the vacuum transferring chamber. The processing chamber comprises a vessel detachably located at an arranging aperture formed in a wall of the vacuum transferring chamber and closing the arranging aperture in an air-tight manner from the outside of the apparatus. A substrate arranging portion is arranged in the vacuum transferring chamber so as to be move toward and away from the vessel to form an air-tight chamber space in the vessel isolated from the vacuum transferring chamber when the substrate arranging portion has moved to the vessel. The vacuum transferring chamber comprises therein a substrate transferring mechanism for transferring the substrates along transferring passages in the vacuum transferring chamber. The substrate arranging portion comprises a substrate lifter for moving the substrate between the transferring passages and the substrate arranging portion.

摘要翻译： 一种真空处理装置，包括负载锁定室，真空传送室和处理室，分别具有用于抽空各个室的抽空系统。 负载锁定室具有用于隔离和打开负载锁定室与大气的连通的第一隔离阀和用于隔离和打开负载锁定室与真空传送室的连通的第二隔离阀。 处理室包括可拆卸地定位在形成在真空传送室的壁中的布置孔处的容器，并且从设备的外部以气密的方式封闭布置孔。 衬底布置部分布置在真空传送室中，以便朝向和远离容器移动，以在衬底布置部分移动到容器时与真空传送室隔离的容器中形成气密室空间。 真空传送室包括用于沿着真空传送室中的传送通道传送基板的基板传送机构。 基板布置部分包括用于在输送通道和基板布置部分之间移动基板的基板升降器。

公开(公告)号：US4399016A

公开(公告)日：1983-08-16

申请号：US357216

申请日：1982-03-11

申请人： Tsutomu Tsukada ,  Hideo Takei

发明人： Tsutomu Tsukada ,  Hideo Takei

IPC分类号： H01L21/205 ,  C23C14/48 ,  C23C14/50 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C15/00

CPC分类号： H01J37/32431 ,  C23C14/50

摘要： In a support member for supporting a sample processed in a hollow space between first and second electrodes between which a high frequency a.c. voltage is supplied to produce plasma in the hollow space, a conductor is laid on the first electrode with a first dielectric layer interposed therebetween and is covered with a second dielectric layer to be attached to the sample. A d.c. voltage source is connected through the first dielectric layer out of contact with the first electrode to induce electrostatic attraction during production of the plasma and, thereby, to fixedly attach the sample to the second dielectric layer. A temperature control member is embedded in the first electrode to control a temperature of the sample. The control member may be a cooling member or a heater. A plurality of the support members may be located on the first electrode. Preferably, the first and the second dielectric layers are of epoxy resin and polyimide resin, respectively.

摘要翻译： 在用于支撑处理在第一和第二电极之间的中空空间中的样品的支撑构件中，高频率交流 电压被提供以在中空空间中产生等离子体，导体放置在第一电极上，其间插入有第一介电层，并且被第二电介质层覆盖以附着到样品。 一个d.c. 电压源通过与第一电极不接触的第一介电层连接，以在制造等离子体期间引起静电吸引，从而将样品固定地附接到第二介电层。 温度控制部件嵌入第一电极中以控制样品的温度。 控制构件可以是冷却构件或加热器。 多个支撑构件可以位于第一电极上。 优选地，第一和第二电介质层分别是环氧树脂和聚酰亚胺树脂。

公开(公告)号：US20140056785A1

公开(公告)日：2014-02-27

申请号：US14001278

申请日：2012-02-02

申请人： Tsutomu Tsukada ,  Hiroshi Imamura ,  Hiroki Kuzuoka ,  Hiroaki Kaneshiro ,  Isamu Nagai ,  Takashi Kataoka

发明人： Tsutomu Tsukada ,  Hiroshi Imamura ,  Hiroki Kuzuoka ,  Hiroaki Kaneshiro ,  Isamu Nagai ,  Takashi Kataoka

IPC分类号： B01J19/00

CPC分类号： B01J19/0046 ,  B01D53/58 ,  F23G7/063 ,  F23G7/068 ,  F23J2215/10 ,  F23J2219/40 ,  F23J2219/80 ,  F23L15/02 ,  Y02A50/2346 ,  Y02E20/348

摘要： Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen.

摘要翻译： 提供了一种氨解毒装置，当通过热分解对氨进行解毒时，能够防止产生氮氧化物。 也就是说，通过使用以下方式配置氨解毒装置来解决问题：电加热器; 氨分解室，其接受待处理的含氨气体，并且使用来自所述电加热器的热量在不存在氧的情况下热分解氨; 一种热分解气体燃烧室，其接受通过氨的热分解产生的并且从氨分解室排出的待处理的含氮和氢的气体;以及供给装置，用于从 外部进入热分解气体燃烧室，以燃烧氢气。

公开(公告)号：US5936352A

公开(公告)日：1999-08-10

申请号：US753090

申请日：1996-11-20

申请人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hirofumi Matsumoto ,  Hiroyuki Ueyama

发明人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hirofumi Matsumoto ,  Hiroyuki Ueyama

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05B37/00

CPC分类号： H01J37/3211 ,  H01J37/32082 ,  H01J37/32165 ,  H05H1/46 ,  H01J2237/3346

摘要： A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.

摘要翻译： 等离子体处理装置包括等离子体室和由第一组平行天线元件和第二组平行天线元件形成的天线，第一组的天线元件与第二组的天线元件交错布置。 能量源将第一相位的振荡能量提供给第一组天线元件，并将第二组相对于第二组天线振子的振荡能量提供给第二组天线元件，以在腔室中产生相反移动的能量场，使得电子被限制在 在室内产生的等离子体。

公开(公告)号：US5900699A

公开(公告)日：1999-05-04

申请号：US876902

申请日：1997-06-16

申请人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hiroyuki Ueyama

发明人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hiroyuki Ueyama

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/00

CPC分类号： H01L21/67069

摘要： The plasma generator includes a plasma generation chamber which is pumped and into which plasma generation gas is introduced. An antenna provided outside the plasma generation chamber, a RF source supplying a RF power with the antenna to excite the antenna. A part or whole of the plasma generation chamber is made of dielectric. The antenna radiates the RF through the dielectric and includes an antenna element which longitudinal direction is vertical to the direction for the plasma. The plasma generation chamber has a side wall intersecting the longitudinal direction of the antenna element at both sides. A part or whole of a plasma generation chamber is made of dielectric having relative permittivity .epsilon..sub.S. The antenna radiates a RF through the dielectric and is comprised of multiple antenna elements which longitudinal directions are on a plane vertical to the direction for the plasma. A shield is provided at the opposite side of the electric interposing the antenna, and, the electric distance between the antenna and the shield is shorter than the length made from adding 1/.epsilon..sub.S times of the thickness of the dielectric with the distance between the dielectric and the antenna. A surface treatment apparatus using the plasma generator, includes a substrate holder for placing a substrate to be treated in parallel with the longitudinal direction of the antenna elements in the plasma generation chamber.

摘要翻译： 等离子体发生器包括等离子体产生室，其被泵送并被引入等离子体产生气体。 设置在等离子体产生室外部的天线，RF天线提供RF功率以激发天线。 等离子体生成室的一部分或全部由电介质构成。 天线通过电介质辐射RF，并且包括纵向方向垂直于等离子体的方向的天线元件。 等离子体产生室具有与两侧的天线元件的纵向方向相交的侧壁。 等离子体产生室的一部分或全部由具有相对介电常数εS的电介质制成。天线通过电介质辐射RF，并且由多个天线元件组成，纵向方向在垂直于等离子体的方向的平面上。 在插入天线的电气的相对侧设置有屏蔽，并且天线和屏蔽之间的电距离短于由电介质的厚度的1 / epsilon S倍增加的长度 电介质和天线。 使用等离子体发生器的表面处理装置包括用于将待处理基板与等离子体发生室中的天线元件的纵向平行放置的基板保持器。

公开(公告)号：US4430151A

公开(公告)日：1984-02-07

申请号：US502461

申请日：1983-06-09

申请人： Tsutomu Tsukada

发明人： Tsutomu Tsukada

IPC分类号： G01N21/62 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/3065 ,  G01N21/62 ,  H01J37/32935

摘要： In a monitoring method of monitoring status of a silicon layer etched in a hollow space by plasma, a chlorine including gas is introduced into a hollow space to cause CCl-radical to occur in the hollow space. A first spectrum region is selected to detect first emission spectra of the CCl-radical which are variable in intensity only during the etching and which may include a wavelength of 307 nm. Preferably, a second spectrum region is selected to second emission spectra invariable even during the etching and to indicate the beginning and the end of the etching by monitoring a relationship between the first and the second emission spectra. The second spectrum region may include a wavelength of 396 nm. Alternatively, emission spectra of OH-radical which results from water remaining in the hollow space may be monitored as the first emission spectra.

摘要翻译： 在通过等离子体监测在中空空间中蚀刻的硅层的状态的监视方法中，将含氯的气体引入中空空间中以在中空空间中发生CCl-自由基。 选择第一光谱区域以检测仅在蚀刻期间强度可变的CCl-基团的第一发射光谱，并且其可以包括307nm的波长。 优选地，即使在蚀刻期间，第二发射光谱被选择为第二发射光谱也不变，并且通过监测第一和第二发射光谱之间的关系来指示蚀刻的开始和结束。 第二光谱区可以包括396nm的波长。 或者，可以监测由中空空间中剩余的水产生的OH-基团的发射光谱作为第一发射光谱。

公开(公告)号：US20070086939A1

公开(公告)日：2007-04-19

申请号：US11639155

申请日：2006-12-15

申请人： Yoichiro Numasawa ,  Tsutomu Tsukada

发明人： Yoichiro Numasawa ,  Tsutomu Tsukada

IPC分类号： C01B7/00 ,  B01J19/08

CPC分类号： H01J37/321 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0832 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0894 ,  C01B7/00 ,  C01B7/193 ,  H01J2237/022

摘要： The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.

摘要翻译： 本发明提供了一种使用等离子体化学反应制造卤素气体的方法和装置，具有简单，实用和维护处理源材料的安全性以及能够在卤素气体相同设备中制造卤素气体的特征 并且还提供能够有效地循环和使用卤素气体的卤素气体循环和回收系统。 在化学式A中表示的气体（A表示金属元素或半导体元素，X表示卤素元素，i和j表示整数）被引入 真空中的反应容器在反应容器中产生等离子体，产生等离子体化学反应。 通过等离子体化学反应生成的含有卤素元素以外的元素作为主要成分的微粒从反应容器中除去，从而在反应容器中产生卤素气体。

公开(公告)号：US6016765A

公开(公告)日：2000-01-25

申请号：US905767

申请日：1997-08-04

申请人： Yoichiro Numasawa ,  Shinya Hasegawa ,  Tsutomu Tsukada ,  Nobuyuki Takahashi

发明人： Yoichiro Numasawa ,  Shinya Hasegawa ,  Tsutomu Tsukada ,  Nobuyuki Takahashi

IPC分类号： H05H1/46 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467

摘要： A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.

摘要翻译： 等离子体处理装置配备有反应器，该反应器具有基座12，将反应气体输送到反应器内部的反应气体输送机构，泵出反应器内部的泵送机构24， 生成机制。 反应器由金属制成，等离子体产生机构包括产生感应电场的至少单绕组线圈16，并且线圈建立在反应器内并围绕等离子体产生空间围绕电介质部分 15和17。

公开(公告)号：US5565738A

公开(公告)日：1996-10-15

申请号：US440453

申请日：1995-05-12

申请人： Seiji Samukawa ,  Kibatsu Shinohara ,  Hirobumi Matsumoto ,  Tsutomu Tsukada ,  Yukito Nakagawa

发明人： Seiji Samukawa ,  Kibatsu Shinohara ,  Hirobumi Matsumoto ,  Tsutomu Tsukada ,  Yukito Nakagawa

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/00

CPC分类号： H01J37/3211 ,  H01J37/32669

摘要： A plasma processing apparatus comprises a plasma chamber having a gas inlet opening and a gas outlet opening. A first high-frequency energy source supplies accelerating energy to a holder that supports a semiconductor specimen within the chamber to produce a high-frequency accelerating electric field. Gas is introduced to the chamber through the inlet opening and accelerated by the electric field toward the specimen. An antenna structure is connected to a second high-frequency energy source which supplies exciting energy at a frequency in the range between 100 MHz and 1 GHz which is higher than the frequency of the accelerating energy. The antenna structure has radially outwardly extending, circumferentially equally spaced apart elements of length equal to the quarter wavelength of the exciting energy so that there is a phase difference of 180 degrees between adjacent ones of the antenna elements. The accelerated gas is uniformly excited and converted to high-density plasma.

摘要翻译： 等离子体处理装置包括具有气体入口和气体出口的等离子体室。 第一高频能源将加速能量提供给支撑室内的半导体样品以产生高频加速电场。 通过入口将气体引入腔室，并通过电场向样品加速。 天线结构连接到第二高频能源，其在比加速能量的频率高的100MHz和1GHz之间的频率处提供激励能量。 天线结构具有长度等于激发能量的四分之一波长的径向向外延伸的周向等间隔的元件，使得相邻天线元件之间存在180度的相位差。 加速气体被均匀地激发并转化为高密度等离子体。