公开(公告)号：US07439114B2

公开(公告)日：2008-10-21

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US20050225253A1

公开(公告)日：2005-10-13

申请号：US11100613

申请日：2005-04-07

申请人： Tsutomu Yamada ,  Kazuhiro Imao

发明人： Tsutomu Yamada ,  Kazuhiro Imao

IPC分类号： H01L51/50 ,  G09F9/30 ,  G09G3/10 ,  G09G3/30 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/32 ,  H01L29/04 ,  H01L29/786 ,  H05B3/10 ,  H05B33/08 ,  H05B33/12 ,  H05B33/14

CPC分类号： H01L27/1233 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78696

摘要： The invention is directed to reduction of a pattern size of a driving transistor of an emissive element and an improvement of an aperture ratio of a pixel. A second active layer of a driving TFT is formed of a two laminated polysilicon layers. The upper polysilicon layer is formed at the same time when a polysilicon layer forming a first active layer of a pixel selecting TFT is formed, and has a same thickness as that of the first active layer. Therefore, the second active layer is formed thicker by a film thickness of the lower polysilicon layer. An average crystal grain size of the second active layer is smaller than an average crystal grain size of the first active layer. Therefore, a carrier mobility of the driving TFT is lower than a carrier mobility of the pixel selecting TFT. This can shorten a channel length of the driving TFT.

摘要翻译： 本发明旨在减少发射元件的驱动晶体管的图案尺寸和改善像素的开口率。 驱动TFT的第二有源层由两层叠多晶硅层形成。 当形成形成像素选择TFT的第一有源层的多晶硅层并且具有与第一有源层相同的厚度时，同时形成上多晶硅层。 因此，第二有源层由下部多晶硅层的膜厚形成得较厚。 第二有源层的平均晶粒尺寸小于第一有源层的平均晶粒尺寸。 因此，驱动TFT的载流子迁移率低于像素选择TFT的载流子迁移率。 这可以缩短驱动TFT的沟道长度。

公开(公告)号：US20050287825A1

公开(公告)日：2005-12-29

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/336 ,  H01L21/42 ,  H01L21/4763 ,  H01L21/477 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US07061017B2

公开(公告)日：2006-06-13

申请号：US10714829

申请日：2003-11-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L29/76

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US06274414B1

公开(公告)日：2001-08-14

申请号：US08911505

申请日：1997-08-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21324

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US20050062047A1

公开(公告)日：2005-03-24

申请号：US10945782

申请日：2004-09-21

申请人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

发明人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L29/78645 ,  H01L29/78675

摘要： A device has a first transistor and a second transistor wherein a channel length direction of the first transistor extends along a first direction and a channel length direction of the second transistor extends along a second direction intersecting the first direction, and the second transistor is formed on a same substrate as the first transistor. A first channel region and a second channel region are formed in semiconductor layers which are simultaneously formed and a mobility of the semiconductor film has an anisotropy in the first and second directions. With this structure, transistors having different mobilities can be obtained while using the semiconductor films formed on the same substrate and from a same material. For example, it is possible to form a transistor in which a high resistance is required using a semiconductor layer of the same characteristics as that in a transistor in which a high speed operation is desired, on the same substrate and with a minimum area.

摘要翻译： 器件具有第一晶体管和第二晶体管，其中第一晶体管的沟道长度方向沿着第一方向延伸，并且第二晶体管的沟道长度方向沿着与第一方向相交的第二方向延伸，并且第二晶体管形成在 与第一晶体管相同的衬底。 在同时形成的半导体层中形成第一沟道区和第二沟道区，并且半导体膜的迁移率在第一和第二方向上具有各向异性。 利用这种结构，可以在使用形成在同一衬底上的相同材料的半导体膜上获得具有不同迁移率的晶体管。 例如，可以在同一衬底上并且具有最小面积的情况下，使用与需要高速运算的晶体管相同特性的半导体层，形成要求高电阻的晶体管。

公开(公告)号：US06426791B2

公开(公告)日：2002-07-30

申请号：US09790915

申请日：2001-02-22

申请人： Kazuhiro Imao ,  Takashi Kuwahara ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kazuhiro Imao ,  Takashi Kuwahara ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G01N2155

CPC分类号： H01L22/24 ,  H01L22/12

摘要： Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.

摘要翻译： 测量通过激光退火结晶的p-Si膜的反射率，发现反射率的波长依赖性，并且计算一阶变化率以确定波长500nm附近的最小值。 该值是在激光功率下的固有光学值，并且涉及通过Secco蚀刻等测量的晶粒尺寸。 记录光学值和晶粒尺寸之间的一些对应关系并线性绘制。 通过从线上p-Si膜的反射率计算光学值，相应地确定晶粒尺寸。 因此，可以在线监测半导体膜，从而提高成品率并节省制造半导体器件的成本。

公开(公告)号：US06797651B2

公开(公告)日：2004-09-28

申请号：US10080424

申请日：2002-02-22

申请人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

发明人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

IPC分类号： H01L2126

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268

摘要： A laser annealing apparatus is provided in which laser light is irradiated onto an amorphous semiconductor layer placed inside an annealing chamber through a chamber window, thereby poly-crystallizing the amorphous semiconductor film. Inside the annealing chamber a low degree vacuum (about 1.3×103 Pa to about 1.3 Pa) is maintained at a room temperature. An inert gas such as nitrogen, hydrogen, or argon is introduced into the atmosphere while maintaining the low degree vacuum. As a result, the surface smoothness of the polycrystalline semiconductor layer is comparable to that resulting from high degree vacuum annealing, while, unlike high degree vacuum annealing, there is less contamination of the chamber window and productivity is improved.

摘要翻译： 提供一种激光退火装置，其中激光照射到通过室窗放置在退火室内部的非晶半导体层上，从而使非晶半导体膜多晶化。 在退火室内，将低度真空度（约1.3×10 3 Pa至约1.3Pa）保持在室温。 将惰性气体如氮气，氢气或氩气引入气氛中同时保持低度真空度。 结果，多晶半导体层的表面平滑度与高度真空退火得到的表面平滑度相当，而与高度真空退火不同，室窗口的污染较少，生产率提高。

公开(公告)号：US08064028B2

公开(公告)日：2011-11-22

申请号：US11953103

申请日：2007-12-10

申请人： Shigenori Katayama ,  Tomohide Onogi ,  Kazuhiro Imao

发明人： Shigenori Katayama ,  Tomohide Onogi ,  Kazuhiro Imao

IPC分类号： G02F1/1345 ,  G02F1/1333

CPC分类号： G02F1/13452 ,  G02F1/136204 ,  G02F2202/023 ,  H01L27/0248 ,  H05K1/0259 ,  H05K1/181 ,  H05K3/284 ,  H05K3/361 ,  H05K2201/10977 ,  H05K2203/304

摘要： A method for manufacturing an electro-optical device including an element substrate which includes a plurality of pixels including pixel electrodes and which is connected to a circuit board includes providing a UV-curable molding member on the element substrate such that the molding member extends from the element substrate to the circuit board and also includes curing the molding member by irradiating the molding member with UV light. The element substrate includes an electrostatic protection circuit. The electrostatic protection circuit is shielded from the UV light applied to the molding member in the operation of curing the molding member.

摘要翻译： 一种制造包括元件基板的电光装置的方法，该元件基板包括包括像素电极并且连接到电路板的多个像素，包括在元件基板上提供可UV固化的模制构件，使得模制构件从 元件基板连接到电路板，还包括通过用UV光照射模制构件来固化模制构件。 元件基板包括静电保护电路。 在固化成型构件的操作中，静电保护电路与施加到模制构件的UV光屏蔽。

公开(公告)号：US06218198B1

公开(公告)日：2001-04-17

申请号：US09032243

申请日：1998-02-27

申请人： Kazuhiro Imao ,  Takashi Kuwahara ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kazuhiro Imao ,  Takashi Kuwahara ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L2100

CPC分类号： H01L22/24 ,  H01L22/12

摘要： Reflectance of a p-Si film crystallized by laser annealing is measured, a wavelength dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wavelength of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.

摘要翻译： 测量通过激光退火结晶的p-Si膜的反射率，发现反射率的波长依赖性，并且计算一阶变化率以确定在500nm波长附近的最小值。 该值是在激光功率下的固有光学值，并且涉及通过Secco蚀刻等测量的晶粒尺寸。 记录光学值和晶粒尺寸之间的一些对应关系并线性绘制。 通过从线上p-Si膜的反射率计算光学值，相应地确定晶粒尺寸。 因此，可以在线监测半导体膜，从而提高成品率并节省制造半导体器件的成本。