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    Semiconductor memory device and method of refreshing semiconductor memory device
    1.
    发明授权
    Semiconductor memory device and method of refreshing semiconductor memory device 失效
    半导体存储器件和刷新半导体存储器件的方法

    公开(公告)号：US5926429A

    公开(公告)日：1999-07-20

    申请号：US199050

    申请日：1998-11-24

    申请人： Tsuyoshi Saitoh ,  Kiyoyuki Shiroshima ,  Michio Nakajima ,  Masaaki Matsuo ,  Nobuyuki Fujii ,  Akira Kitaguchi

    发明人： Tsuyoshi Saitoh ,  Kiyoyuki Shiroshima ,  Michio Nakajima ,  Masaaki Matsuo ,  Nobuyuki Fujii ,  Akira Kitaguchi

    IPC分类号： G11C11/406 ,  G11C7/00

    CPC分类号： G11C11/406

    摘要： A semiconductor memory device includes memory elements, each maintaining memory contents within a period of time during which a refresh operation is repeated, and a refresh request circuit for making a refresh request. The semiconductor memory device includes refreshing circuits each of which, in response to a refresh request from the refresh request circuit, performs a refresh operation on a different number of memory elements at the same time, and a selecting circuit for selecting one refreshing circuit from among the refreshing circuits according to the number of memory elements included in the semiconductor memory device. The refresh request circuit can change the interval at which it makes a refresh request.

    摘要翻译： 半导体存储器件包括存储器元件，每个存储器元件在重复刷新操作的时间段内保持存储器内容，以及刷新请求电路。 半导体存储器件包括刷新电路，每个刷新电路响应于来自刷新请求电路的刷新请求同时对不同数量的存储器元件执行刷新操作，以及选择电路，用于从其中选择一个刷新电路 根据包括在半导体存储器件中的存储元件的数量的刷新电路。 刷新请求电路可以改变刷新请求的间隔。

    Semiconductor device test board and method for evaluating semiconductor devices
    3.
    发明授权
    Semiconductor device test board and method for evaluating semiconductor devices 失效
    半导体器件测试板和半导体器件评估方法

    公开(公告)号：US6114866A

    公开(公告)日：2000-09-05

    申请号：US18445

    申请日：1998-02-04

    申请人： Masaaki Matsuo ,  Tsuyoshi Saitoh ,  Takekazu Yamashita ,  Michio Nakajima ,  Akira Kitaguchi ,  Hideki Toki

    发明人： Masaaki Matsuo ,  Tsuyoshi Saitoh ,  Takekazu Yamashita ,  Michio Nakajima ,  Akira Kitaguchi ,  Hideki Toki

    IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  G01R35/00 ,  G01R31/02

    CPC分类号： G01R31/2863 ,  H01L2924/0002

    摘要： A semiconductor device test board solves a problem with conventional test boards in that test results obtained through a burn-in procedure could be identified only before the test board is taken out of a burn-in oven. Hence, conventional test boards required additional steps for checking the test results after removing the test boards from the burn-in oven. This extra step prevents the efficiency of the test from being improved. One embodiment of the present test board has indicator arms, each rotatably mounted on a pivot on the test board, for indicating, in response to a signal on a signal line, the test result of the semiconductor device associated with it. Each of the indicator arms maintains its rest position when no failure has occurred in the semiconductor device associated with it during the test. Each indicator arm changes its position if a failure has occurred in the semiconductor device during the test, and retains one of the two positions until after the test board is taken out of the burn-in oven. Thus, the test result can be determined after taking out the test board from the burn-in oven.

    摘要翻译： 半导体器件测试板解决了常规测试板的问题，因为只有在将测试板从老化炉中取出之前，才能识别通过烧录程序获得的测试结果。 因此，常规测试板需要额外的步骤，以便在从老化炉中取出测试板后检查测试结果。 这个额外的步骤可以防止测试的效率得到改善。 本测试板的一个实施例具有指示臂，每个指示臂可旋转地安装在测试板上的枢轴上，用于响应于信号线上的信号，指示与其相关联的半导体器件的测试结果。 当在测试期间与其相关联的半导体器件中没有发生故障时，每个指示器臂保持其静止位置。 如果在测试期间在半导体器件中发生故障，则每个指示臂改变其位置，并且保持两个位置中的一个，直到将测试板从老化炉中取出。 因此，可以在从老化炉中取出测试板之后确定测试结果。

    SEMICONDUCTOR LASER ELEMENT
    5.
    发明申请
    SEMICONDUCTOR LASER ELEMENT 有权
    半导体激光元件

    公开(公告)号：US20110211608A1

    公开(公告)日：2011-09-01

    申请号：US12998518

    申请日：2008-10-31

    申请人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

    发明人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

    IPC分类号： H01S5/34

    CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/18

    摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.

    摘要翻译： 半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置 在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于 阻挡层和n型波导层。

    Method for treating prostatic hypertrophy with estradiol derivatives
    8.
    发明授权
    Method for treating prostatic hypertrophy with estradiol derivatives 失效
    用雌二醇衍生物治疗前列腺肥大的方法

    公开(公告)号：US5480878A

    公开(公告)日：1996-01-02

    申请号：US408389

    申请日：1995-03-22

    申请人： Koichi Niimura ,  Takako Kawabe ,  Tsutomu Wada ,  Tsuyoshi Saitoh ,  Kenji Bannai

    发明人： Koichi Niimura ,  Takako Kawabe ,  Tsutomu Wada ,  Tsuyoshi Saitoh ,  Kenji Bannai

    IPC分类号： A61K31/565 ,  A61P35/00 ,  C07J1/00 ,  C07J41/00

    CPC分类号： C07J41/0072 ,  C07J1/0077

    摘要： Disclosed is a method for treating prostatic hypertrophy with an estradiol derivative-alkylating agent conjugate of the formula (1'): ##STR1## wherein R.sup.1 is C.sub.1-4 alkyl or C.sub.1-4 alkoxy; R.sup.2 is acyl or benzyl; m is an integer of 1 to 3; and n is an integer of 0 to 3. Also disclosed is the treatment of prostatic hypertrophy with an estradiol derivative of the formula (II): ##STR2## wherein R.sup.1 is C.sub.1-4 alkyl or C.sub.1-4 alkoxy; R.sup.2 is acyl or benzyl; m is an integer of 1 to 3; and n is an integer of 0 to 3; and X is hydroxy or halogen.

    摘要翻译： 公开了一种用式（1'）的雌二醇衍生物 - 烷化剂缀合物治疗前列腺肥大的方法：其中R 1是C 1-4烷基或C 1-4烷氧基; R2为酰基或苄基; m为1〜3的整数。 并且n是0至3的整数。还公开了用式（II）的雌二醇衍生物治疗前列腺肥大：其中R 1是C 1-4烷基或C 1-4烷氧基; R2是酰基或苄基; m为1〜3的整数。 n为0〜3的整数。 X是羟基或卤素。

    Semiconductor laser element
    10.
    发明授权
    Semiconductor laser element 有权
    半导体激光元件

    公开(公告)号：US08437375B2

    公开(公告)日：2013-05-07

    申请号：US12998518

    申请日：2008-10-31

    申请人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

    发明人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/18

    摘要： A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.

    摘要翻译： 半导体激光元件可以包括n型覆盖层; 与n型覆盖层相邻的n型波导层; 与n型波导层相邻的n型载流子阻挡层; 活性层 以及与有源层相邻的p型覆盖层。 n型覆盖层的带隙宽度可以大于n型波导层的带隙宽度。 n型载流子阻挡层的带隙宽度可以大于或等于第一和第二阻挡层的带隙宽度。 p型覆盖层的带隙宽度可以大于第一和第二阻挡层的带隙宽度和n型波导层的带隙宽度。 有源层可以包括量子阱层和阻挡层。