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公开(公告)号：US08391046B2
公开(公告)日：2013-03-05
申请号：US12644628
申请日：2009-12-22
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including: word lines and first and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and a switching element formed inside a contact hole, the switching element includes first and second conductive layers and a gap in which a resistance value is changed by applying a predetermined voltage, each word line is connected to a gate electrode, each first bit line is connected to a second electrode, each second bit line is connected to the second conductive layer, and data is written by supplying a write voltage to the first bit line connected to the selected memory cell and specifying the word line connected to the memory cell, and data is read by supplying a read voltage to the first bit lines connected to the memory cell and specifying the word line connected to the memory cells.
摘要翻译： 公开了一种存储单元阵列，包括：字线和分别连接到存储单元的第一和第二位线，其中每个存储单元包括MOS晶体管和形成在接触孔内的开关元件，所述开关元件包括第一和第二导电层， 通过施加预定电压来改变电阻值的间隙，每个字线连接到栅电极，每个第一位线连接到第二电极，每个第二位线连接到第二导电层，并且数据 通过向连接到所选择的存储单元的第一位线提供写入电压并指定连接到存储单元的字线来写入写入电压，并且通过向连接到存储器单元的第一位线提供读取电压并指定 字线连接到存储单元。
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公开(公告)号：US08094484B2
公开(公告)日：2012-01-10
申请号：US12644851
申请日：2009-12-22
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the first bit line to connect it to the sense amplifier, specifying the word line and supplying a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the word line voltage becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译： 公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙 通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定第一位线将其连接到感测来读取 放大器，指定字线并将低于写入电压的读取电压提供给第二位线，并且当字线电压变为栅极阈值电压或更高时指定字线，并且驱动电压和 门极阈值电压以下。
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公开(公告)号：US20100165696A1
公开(公告)日：2010-07-01
申请号：US12644608
申请日：2009-12-22
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译： 公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙 通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线 以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线 或更少。
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公开(公告)号：US09130159B2
公开(公告)日：2015-09-08
申请号：US12756522
申请日：2010-04-08
申请人： Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
发明人： Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
摘要翻译： 公开了一种具有纳米隙电极的元件的制造方法，其包括第一电极，设置在第一电极上方的第二电极和设置在第一电极和第二电极之间的间隙，间隙为纳米级，以允许电阻状态 通过在第一电极和第二电极之间施加预定电压进行切换，该方法包括：形成第一电极; 在所述第一电极的上表面上形成间隔物; 形成与间隔物的上表面接触的第二电极; 并移除间隔物以形成间隙。
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5.发明申请公开(公告)号：US20130155757A1
公开(公告)日：2013-06-20
申请号：US13819217
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。
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公开(公告)号：US08395185B2
公开(公告)日：2013-03-12
申请号：US12140411
申请日：2008-06-17
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
IPC分类号： H01L29/66
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/124
摘要： A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
摘要翻译： 一种开关元件，包括：绝缘基板; 设置在所述绝缘基板的一个表面上的第一电极和第二电极; 以及电极间间隙，其设置在第一电极和第二电极之间，并且通过在第一电极和第二电极之间施加预定电压而具有在电阻发生开关现象的纳米级的间隔，其中，一个表面 的绝缘底物含有氮。
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7.发明授权公开(公告)号：US09190145B2
公开(公告)日：2015-11-17
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。
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公开(公告)号：US08174871B2
公开(公告)日：2012-05-08
申请号：US12644608
申请日：2009-12-22
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译： 公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙 通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线 以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线 或更少。
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公开(公告)号：US20100165694A1
公开(公告)日：2010-07-01
申请号：US12644628
申请日：2009-12-22
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including: word lines and first and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and a switching element formed inside a contact hole, the switching element includes first and second conductive layers and a gap in which a resistance value is changed by applying a predetermined voltage, each word line is connected to a gate electrode, each first bit line is connected to a second electrode, each second bit line is connected to the second conductive layer, and data is written by supplying a write voltage to the first bit line connected to the selected memory cell and specifying the word line connected to the memory cell, and data is read by supplying a read voltage to the first bit lines connected to the memory cell and specifying the word line connected to the memory cells.
摘要翻译： 公开了一种存储单元阵列，包括：字线和分别连接到存储单元的第一和第二位线，其中每个存储单元包括MOS晶体管和形成在接触孔内的开关元件，所述开关元件包括第一和第二导电层， 通过施加预定电压来改变电阻值的间隙，每个字线连接到栅电极，每个第一位线连接到第二电极，每个第二位线连接到第二导电层，并且数据 通过向连接到所选择的存储单元的第一位线提供写入电压并指定连接到存储单元的字线来写入写入电压，并且通过向连接到存储器单元的第一位线提供读取电压并指定 字线连接到存储单元。
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10.发明授权Memory element array having switching elements including a gap of nanometer order 有权具有包括纳米级间隙的开关元件的存储元件阵列公开(公告)号：US07679946B2
公开(公告)日：2010-03-16
申请号：US12141492
申请日：2008-06-18
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/003 , G11C2213/76 , H01L27/2418 , H01L45/04 , H01L45/124
摘要： Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
摘要翻译： 公开了包括以阵列布置的多个存储元件的存储元件阵列，其中存储元件是各自包括纳米级的间隙的开关元件，其中通过在电极之间施加预定电压而引起电阻的切换现象，并且 存储元件阵列设置有分别与开关元件串联连接的隧道元件，每个隧道元件防止在施加预定电压时产生流向另一开关元件的潜行电流电流。
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