公开(公告)号：US20140084463A1

公开(公告)日：2014-03-27

申请号：US14095144

申请日：2013-12-03

Applicant: Unimicron Technology Corporation

Inventor： Tzyy-Jang Tseng ,  Dyi-Chung Hu ,  Yu-Shan Hu

IPC: H01L21/56 ,  H01L21/768 ,  H01L23/498

CPC classification number: H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76885 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2224/12105 ,  H01L2224/45144 ,  H01L2224/4824 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00015 ,  H01L2924/00

Abstract: A semiconductor package structure is provided, including: a semiconductor chip having electrode pads disposed thereon and metal bumps disposed on the electrode pads; an encapsulant encapsulating the semiconductor chip; a dielectric layer formed on the encapsulant and having a plurality of patterned intaglios formed therein for exposing the metal bumps; a wiring layer formed in the patterned intaglios of the dielectric layer and electrically connected to the metal bumps; and a metal foil having a plurality of metal posts disposed on a surface thereof such that the metal foil is disposed on the encapsulant with the metal posts penetrating the encapsulant so as to extend to the inactive surface of the semiconductor chip. Compared with the prior art, the present invention reduces the overall thickness of the package structure, increases the electrical transmission efficiency and improves the heat dissipating effect.

Abstract translation: 提供一种半导体封装结构，包括：具有设置在其上的电极焊盘的半导体芯片和设置在电极焊盘上的金属凸块; 封装半导体芯片的密封剂; 介电层，其形成在所述密封剂上并且具有形成在其中的多个图案化的凹凸，用于暴露所述金属凸块; 形成在电介质层的图案化凹凸中并与金属凸块电连接的布线层; 以及具有设置在其表面上的多个金属柱的金属箔，使得金属箔设置在密封剂上，金属柱穿透密封剂，以延伸到半导体芯片的非活性表面。 与现有技术相比，本发明减小了封装结构的整体厚度，提高了电传输效率并提高了散热效果。

公开(公告)号：US09111948B2

公开(公告)日：2015-08-18

申请号：US14095144

申请日：2013-12-03

Applicant: Unimicron Technology Corporation

Inventor： Tzyy-Jang Tseng ,  Dyi-Chung Hu ,  Yu-Shan Hu

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L23/36

CPC classification number: H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76885 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2224/12105 ,  H01L2224/45144 ,  H01L2224/4824 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00015 ,  H01L2924/00

Abstract: A semiconductor package structure is provided, including: a semiconductor chip having electrode pads disposed thereon and metal bumps disposed on the electrode pads; an encapsulant encapsulating the semiconductor chip; a dielectric layer formed on the encapsulant and having a plurality of patterned intaglios formed therein for exposing the metal bumps; a wiring layer formed in the patterned intaglios of the dielectric layer and electrically connected to the metal bumps; and a metal foil having a plurality of metal posts disposed on a surface thereof such that the metal foil is disposed on the encapsulant with the metal posts penetrating the encapsulant so as to extend to the inactive surface of the semiconductor chip. Compared with the prior art, the present invention reduces the overall thickness of the package structure, increases the electrical transmission efficiency and improves the heat dissipating effect.

Abstract translation: 提供一种半导体封装结构，包括：具有设置在其上的电极焊盘的半导体芯片和设置在电极焊盘上的金属凸块; 封装半导体芯片的密封剂; 介电层，其形成在所述密封剂上并且具有形成在其中的多个图案化的凹凸，用于暴露所述金属凸块; 形成在电介质层的图案化凹凸中并与金属凸块电连接的布线层; 以及具有设置在其表面上的多个金属柱的金属箔，使得金属箔设置在密封剂上，金属柱穿透密封剂，以延伸到半导体芯片的非活性表面。 与现有技术相比，本发明减小了封装结构的整体厚度，提高了电传输效率并提高了散热效果。

公开(公告)号：US08633061B2

公开(公告)日：2014-01-21

申请号：US13948671

申请日：2013-07-23

Applicant: Unimicron Technology Corporation

Inventor： Tzyy-Jang Tseng ,  Dyi-Chung Hu ,  Yu-Shan Hu

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L21/56 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/214 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/4824 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/30107 ,  H01L2224/29099 ,  H01L2224/83 ,  H01L2224/19 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: A package structure includes a metal sheet having perforations; a semiconductor chip having an active surface and an opposite inactive surface, wherein the active surface has electrode pads thereon, conductive bumps are disposed on the electrode pads, the semiconductor chip is combined with the metal sheet via the inactive surface thereof, a protective buffer layer is formed on the active surface to cover the conductive bumps, and the perforations are arranged around a periphery of the inactive surface of the semiconductor chip; an encapsulant formed on the metal sheet and in the perforations, for encapsulating the semiconductor chip and exposing the protective buffer layer; and a circuit fan-out layer formed on the encapsulant and the protective buffer layer and having conductive vias penetrating the protective buffer layer and electrically connecting to the conductive bumps. A method of fabricating the package structure and a package-on-package device including the package structure are also provided.

Abstract translation: 包装结构包括具有穿孔的金属片; 具有活性表面和相反的非活性表面的半导体芯片，其中活性表面上具有电极焊盘，导电凸块设置在电极焊盘上，半导体芯片通过其非活性表面与金属片组合，保护缓冲层 形成在活性表面上以覆盖导电凸块，并且穿孔布置在半导体芯片的非活性表面周围; 形成在所述金属片上和所述穿孔中的密封剂，用于封装所述半导体芯片并暴露所述保护缓冲层; 以及形成在密封剂和保护缓冲层上并具有穿过保护缓冲层并且电连接到导电凸块的导电通孔的电路扇出层。 还提供了制造封装结构的方法和包括封装结构的封装封装器件。

公开(公告)号：US20130309817A1

公开(公告)日：2013-11-21

申请号：US13948671

申请日：2013-07-23

Applicant: UNIMICRON TECHNOLOGY CORPORATION

Inventor： Tzyy-Jang Tseng ,  Dyi-Chung Hu ,  Yu-Shan Hu

IPC: H01L21/56

CPC classification number: H01L21/56 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/214 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/4824 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/30107 ,  H01L2224/29099 ,  H01L2224/83 ,  H01L2224/19 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: A package structure includes a metal sheet having perforations; a semiconductor chip having an active surface and an opposite inactive surface, wherein the active surface has electrode pads thereon, conductive bumps are disposed on the electrode pads, the semiconductor chip is combined with the metal sheet via the inactive surface thereof, a protective buffer layer is formed on the active surface to cover the conductive bumps, and the perforations are arranged around a periphery of the inactive surface of the semiconductor chip; an encapsulant formed on the metal sheet and in the perforations, for encapsulating the semiconductor chip and exposing the protective buffer layer; and a circuit fan-out layer formed on the encapsulant and the protective buffer layer and having conductive vias penetrating the protective buffer layer and electrically connecting to the conductive bumps. A method of fabricating the package structure and a package-on-package device including the package structure are also provided.

Abstract translation: 包装结构包括具有穿孔的金属片; 具有活性表面和相反的非活性表面的半导体芯片，其中活性表面上具有电极焊盘，导电凸块设置在电极焊盘上，半导体芯片通过其非活性表面与金属片组合，保护缓冲层 形成在活性表面上以覆盖导电凸块，并且穿孔布置在半导体芯片的非活性表面周围; 形成在所述金属片上和所述穿孔中的密封剂，用于封装所述半导体芯片并暴露所述保护缓冲层; 以及形成在密封剂和保护缓冲层上并具有穿过保护缓冲层并且电连接到导电凸块的导电通孔的电路扇出层。 还提供了制造封装结构的方法和包括封装结构的封装封装器件。