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    Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices
    1.
    发明申请
    Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices 审中-公开
    钛 - 钨合金基镜和电极在体声波器件中的应用

    公开(公告)号：US20070035364A1

    公开(公告)日：2007-02-15

    申请号：US11203543

    申请日：2005-08-11

    申请人： Uppili Sridhar ,  Ralph Wall ,  Guillaume Bouche

    发明人： Uppili Sridhar ,  Ralph Wall ,  Guillaume Bouche

    IPC分类号： H03H9/56

    CPC分类号： H03H9/587 ,  H03H3/02 ,  H03H9/175 ,  H03H9/584

    摘要： Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices simplify processing by eliminating the need for adhesion, barrier and seed layers, and preserve the advantages of tungsten layers. Alternate layers of high and low acoustic impedance materials are use, wherein the high acoustic impedance layers are titanium-tungsten alloy layers, preferably deposited by physical vapor deposition, and isotropically patterned with a wet etch. SiO2 is preferably used for the low acoustic impedance layers, though other low acoustic impedance materials may be used if desired. Electrodes and loads may also be a Titanium-tungsten alloy. Titanium-tungsten alloys in the range of 3 to 15 percent of titanium by weight are preferred.

    摘要翻译： 体积波形器件中的钛 - 钨合金镜和电极通过消除对粘合，阻挡层和种子层的需要，并且保留了钨层的优点，从而简化了加工过程。 使用高和低声阻抗材料的交替层，其中高声阻抗层是钛 - 钨合金层，优选通过物理气相沉积沉积，并用湿蚀刻各向同性地图案化。 优选地，低SiO 2 SiO 2用于低声阻抗层，尽管如果需要可以使用其它低声阻抗材料。 电极和负载也可以是钛 - 钨合金。 优选钛 - 钨合金的重量比为3〜15％的钛 - 钨合金。

    LDMOS with field plate connected to gate
    2.
    发明授权
    LDMOS with field plate connected to gate 有权
    LDMOS与场板连接到门

    公开(公告)号：US09450074B1

    公开(公告)日：2016-09-20

    申请号：US13194210

    申请日：2011-07-29

    申请人： Fanling Hsu Yang ,  Timothy K. McGuire ,  Sudarsan Uppili ,  Guillaume Bouche

    发明人： Fanling Hsu Yang ,  Timothy K. McGuire ,  Sudarsan Uppili ,  Guillaume Bouche

    IPC分类号： H01L29/40 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/66681 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7835

    摘要： Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the device. In one or more implementations, the semiconductor devices include a substrate having a source region of a first conductivity type and a drain region of the first conductivity type. A gate is positioned over the surface and between the source region and the drain region. The gate is configured to receive a voltage so that a conduction region may be formed at least partially below the gate to allow majority carriers to travel between the source region and the drain region. The device also includes a field plate at least partially positioned over and connected to the gate. The field plate is configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.

    摘要翻译： 描述了半导体器件，例如横向扩散的金属氧化物半导体（LDMOS）器件，其具有连接到器件的栅极的场板。 在一个或多个实施方案中，半导体器件包括具有第一导电类型的源极区和第一导电类型的漏极区的衬底。 栅极位于表面上并且在源极区域和漏极区域之间。 栅极被配置为接收电压，使得可以至少部分地在栅极下方形成导电区域，以允许多数载流子在源极区域和漏极区域之间行进。 该装置还包括至少部分地定位在栅极上并连接到栅极的场板。 场板被配置为当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

    LDMOS with thick interlayer-dielectric layer
    3.
    发明授权
    LDMOS with thick interlayer-dielectric layer 有权
    LDMOS具有较厚的层间介电层

    公开(公告)号：US09171916B1

    公开(公告)日：2015-10-27

    申请号：US13272301

    申请日：2011-10-13

    申请人： David L. Snyder ,  Sudarsan Uppili ,  Guillaume Bouche

    发明人： David L. Snyder ,  Sudarsan Uppili ,  Guillaume Bouche

    IPC分类号： H01L29/40 ,  H01L21/8238

    CPC分类号： H01L29/402 ,  H01L21/82385 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

    摘要： Semiconductor devices, such as LDMOS devices, are described that include an interlayer-dielectric layer (ILD) region having a thickness of at least two and one half (2.5) microns to increase the maximum breakdown voltage. In one or more implementations, the semiconductor devices include a substrate having a source region and a drain region formed proximate to a surface of the substrate. A gate is positioned over the surface and between the source region and the drain region. An ILD region having a thickness of at least two and one half (2.5) microns is formed over the surface and the gate of the device. The device also includes one or more field plates configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.

    摘要翻译： 描述了诸如LDMOS器件的半导体器件，其包括具有至少两个和一个（2.5）微米厚度的层间介电层（ILD）区域以增加最大击穿电压。 在一个或多个实施方案中，半导体器件包括具有靠近衬底表面形成的源区和漏区的衬底。 栅极位于表面上并且在源极区域和漏极区域之间。 在器件的表面和栅极上形成具有至少两个半（2.5）微米厚度的ILD区域。 该装置还包括一个或多个场板，其配置成当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

    BAW resonator filter bandwidth and out-of-band frequency rejection
    8.
    发明授权
    BAW resonator filter bandwidth and out-of-band frequency rejection 有权
    BAW谐振器滤波器带宽和带外频率抑制

    公开(公告)号：US07646265B2

    公开(公告)日：2010-01-12

    申请号：US11734188

    申请日：2007-04-11

    申请人： Carlton Stuebing ,  Guillaume Bouche

    发明人： Carlton Stuebing ,  Guillaume Bouche

    IPC分类号： H03H9/00

    CPC分类号： H03H9/605 ,  H03H9/542

    摘要： Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

    摘要翻译： 本发明的实施例提供用于改善BAW谐振器带通滤波器的带宽和抑制通带以上的带外频率的系统，装置和方法。 在本发明的各种实施例中，阻塞电感器串联在滤波器输入和滤波器输出之间，以实现带宽增强和改进的带外频率抑制。 例如，第一阻塞电感器可以位于输入端，并且第二阻塞电感器可以位于BAW谐振器带通滤波器的输出处。

    Methods of contacting the top layer of a BAW resonator
    9.
    发明授权
    Methods of contacting the top layer of a BAW resonator 失效
    接触BAW谐振器顶层的方法

    公开(公告)号：US07567024B2

    公开(公告)日：2009-07-28

    申请号：US11862020

    申请日：2007-09-26

    申请人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

    发明人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

    IPC分类号： H01L41/08

    CPC分类号： H03H9/132

    摘要： Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.

    摘要翻译： 通过在BAW器件上沉积金属层来接触BAW器件中的顶层的方法，使金属层图案化，使得金属层仅在相邻的多个间隔开的位置处延伸并接触BAW器件的顶部电极层 有源谐振器区域的周边，并且具有从顶部和底部电极横向移位的公共区域，并且电连接在多个间隔开的位置处延伸并接触BAW装置的顶部电极的金属层的部分。

    Acoustic resonator device
    10.
    发明授权
    Acoustic resonator device 有权
    声谐振器装置

    公开(公告)号：US07550900B2

    公开(公告)日：2009-06-23

    申请号：US11009688

    申请日：2004-12-10

    申请人： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    发明人： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    IPC分类号： H01L41/08

    CPC分类号： H03H9/587 ,  H03H9/564

    摘要： Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.

    摘要翻译： 声谐振器装置（1）包括有源元件（6）和具有膜（5）的支撑件。 有源元件（6）设置有至少一个压电层（10），并被多层叠层（12）所覆盖。 多层堆叠（12）设置有至少三层，包括至少一层高声阻抗层（15）和至少一层低声阻抗层（13）。 还公开了包括至少一个这样的声谐振器装置的集成电路。