公开(公告)号：US20170373471A1

公开(公告)日：2017-12-28

申请号：US15193069

申请日：2016-06-26

Applicant: VI Systems GmbH

Inventor： Joerg-Reinhardt KROPP ,  Nikolay LEDENTSOV ,  Vitaly SHCHUKIN

IPC: H01S5/22 ,  H01S5/187 ,  H01S5/183 ,  H01S5/042 ,  H01S5/30 ,  H01S5/02

CPC classification number: H01S5/18316 ,  H01L31/00 ,  H01L31/022408 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01S5/0208 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/183 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/1833 ,  H01S5/187 ,  H01S5/2202 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/32

Abstract: An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

公开(公告)号：US20170373470A1

公开(公告)日：2017-12-28

申请号：US15632133

申请日：2017-06-23

Applicant: VI Systems GmbH

Inventor： Nikolay LEDENTSOV ,  Vitaly SHCHUKIN

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/18369 ,  H01S5/18313 ,  H01S5/205

Abstract: An oxide-confined vertical cavity surface emitting laser including a distributed Bragg reflector (DBR) wherein the layers of the (DBR) includes a multi-section layer consisting of a first section having a moderately high aluminum composition, an second section which is an insertion having a low aluminum composition, and a third section which is an oxide-confined aperture formed by partial oxidation of a layer having a high aluminum composition (95% and above). A difference in aluminum composition between a high value in the aperture layer and a moderately high value in the first section prevents non-desirable oxidation of the first section from the mesa side while the aperture layer is being oxidized. A low aluminum composition in the second section prevents non-desirable oxidation in the vertical direction of the layer adjacent to the targeted aperture layer.

公开(公告)号：US20200313392A1

公开(公告)日：2020-10-01

申请号：US16656323

申请日：2019-10-17

Applicant: VI SYSTEMS GmbH

Inventor： Vitaly SHCHUKIN ,  Nikolay LEDENTSOV

IPC: H01S5/183 ,  H01S5/10 ,  H01S5/22 ,  H01S5/20 ,  H01S5/02

Abstract: An in-plane-emitting semiconductor diode laser employs a surface-trapped optical mode existing at a boundary between a distributed Bragg reflector and a homogeneous medium, dielectric or air. The device can operate in both TM-polarized and TE-polarized modes. The mode exhibits an oscillatory decay in the DBR away from the surface and an evanescent decay in the dielectric or in the air. The active region is preferably placed in the top part of the DBR close to the surface. The mode behavior strongly depends on the wavelength of light, upon increase of the wavelength the mode becomes more and more extended into the homogeneous medium, the optical confinement factor of the mode in the active region drops until the surface-trapped mode vanishes. Upon a decrease of the wavelength, the leakage loss of the mode into the substrate increases. Thus, there is an optimum wavelength, at which the laser threshold current density is minimum, and at which the lasing starts. This optimum wavelength is temperature-stabilized, and shifts upon temperature increase at a low rate less than 0.1 nm/K, indicating wavelength-stabilized operation of the device. The approach applies also to semiconductor optical amplifiers or semiconductor gain chips which are also wavelength-stabilized. Reflectivity of the surface-trapped mode from an uncoated facet of the device can be extremely low, also

公开(公告)号：US20180233882A1

公开(公告)日：2018-08-16

申请号：US13771875

申请日：2013-02-20

Applicant: VI Systems GmbH

Inventor： Nikolay LEDENTSOV ,  Vitaly SHCHUKIN

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/10

CPC classification number: H01S5/18302 ,  H01S5/0215 ,  H01S5/1021 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18352 ,  H01S5/205 ,  H01S5/222 ,  H01S5/423 ,  H01S2301/166

Abstract: Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity. High-order lateral optical modes in the aperture region exhibit larger leakage losses than the fundamental lateral optical mode due to the resonant interaction with the continuum of modes outside the aperture, enabling single-mode lasing from a broad aperture vertical cavity surface emitting laser.

公开(公告)号：US20170317472A1

公开(公告)日：2017-11-02

申请号：US15040965

申请日：2016-02-10

Applicant: VI Systems GmbH

Inventor： Nikolay LEDENTSOV ,  Nikolay LEDENTSOV, JR. ,  Vitaly SHCHUKIN

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/02 ,  H01S5/18 ,  H01S5/32 ,  H01S5/30

CPC classification number: H01S5/183 ,  H01S5/0206 ,  H01S5/18 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/1833 ,  H01S5/187 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/32 ,  H01S5/423 ,  H01S2301/166

Abstract: Optoelectronic device undergoes selective chemical transformation like alloy compositional intermixing forming a non-transformed core region and an adjacent to it periphery where transformation has occurred. Activated by selective implantation or diffusion of impurities like Zinc or Silicon, implantation or diffusion of point defects, or laser annealing, transformation results in a change of the refractive index such that the vertical profile of the refractive index at the periphery is distinct from that in the core. Therefore the optical modes of the core are no longer orthogonal to the modes of the periphery, are optically coupled to them and exhibit lateral leakage losses to the periphery. High order transverse optical modes associated to the same vertical optical mode have higher lateral leakage losses to the periphery than the fundamental transverse optical mode, thus supporting single transverse mode operation of the device. This approach applies to single transverse mode vertical cavity surface emitting lasers, edge-emitting lasers and coherently coupled arrays of such devices.