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130 条记录 (耗时 0.028 秒)

    Ohmic contact on p-type GaN
    1.
    发明申请
    Ohmic contact on p-type GaN 失效
    p型GaN上的欧姆接触

    公开(公告)号：US20070069380A1

    公开(公告)日：2007-03-29

    申请号：US11234993

    申请日：2005-09-26

    申请人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    发明人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

    摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

    Structures for reducing operating voltage in a semiconductor device
    2.
    发明申请
    Structures for reducing operating voltage in a semiconductor device 失效
    用于降低半导体器件中的工作电压的结构

    公开(公告)号：US20070034853A1

    公开(公告)日：2007-02-15

    申请号：US11203917

    申请日：2005-08-15

    申请人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    发明人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/305

    摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

    摘要翻译： 发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种 材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

    Edge-emitting LED light source
    3.
    发明申请
    Edge-emitting LED light source 审中-公开
    边缘发光LED光源

    公开(公告)号：US20070029555A1

    公开(公告)日：2007-02-08

    申请号：US11197010

    申请日：2005-08-04

    申请人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    发明人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0756 ,  H01L25/075 ,  H01L33/02 ,  H01L33/08 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.

    摘要翻译： 边缘发光LED光源，以及制造边缘发光LED光源的方法。 边缘发射LED光源具有彼此靠近布置的多个边缘发射LED，以限定边缘发射LED的阵列。 阵列中的多个边缘发光LED中的每一个单独发射的光束一起形成具有大致二维横截面形状的单个光束，例如正方形或其它矩形形状，以及增加的整体光线 助焊剂

    Edge-emitting LED assembly
    4.
    发明申请
    Edge-emitting LED assembly 有权
    边缘发光LED组件

    公开(公告)号：US20070069228A1

    公开(公告)日：2007-03-29

    申请号：US11235592

    申请日：2005-09-26

    申请人： Jeffrey Miller ,  Steven Lester ,  Virginia Robbins

    发明人： Jeffrey Miller ,  Steven Lester ,  Virginia Robbins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46

    摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

    摘要翻译： 根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件 比外部发光面。 反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。 反射光的至少一部分然后从外部发射表面发射。

    Self deploying implant in needle
    8.
    发明授权
    Self deploying implant in needle 有权
    自行部署植入物针

    公开(公告)号：US08652216B2

    公开(公告)日：2014-02-18

    申请号：US12938474

    申请日：2010-11-03

    申请人： Steve Chen ,  Ryan Dempsey ,  Jeffrey Miller ,  Amy Overby

    发明人： Steve Chen ,  Ryan Dempsey ,  Jeffrey Miller ,  Amy Overby

    IPC分类号： A61F2/02

    CPC分类号： A61F2/0059 ,  A61B17/3468 ,  A61B2017/00792 ,  A61B2017/00862 ,  A61B2017/00969 ,  A61B2017/061 ,  A61F2/0077

    摘要： Described, in certain inventive embodiments, are unique devices and methods for introducing implants into soft tissue of a patient. One of these devices includes a tissue-penetrating member that is configured to pass in its entirety through a volume of patient tissue. The tissue-penetrating member has a leading end and a trailing end, and provides a receiving space for receipt of an implant body portion for carrying the implant body portion into the volume of patient tissue. The device also includes an implant that has an implant body portion removably received in the receiving space of the tissue-penetrating member. The implant body portion is configured for deployment from the receiving space in the volume of patient tissue so as to remain deployed there along a passageway traversed by the tissue-penetrating member.

    摘要翻译： 在某些发明实施例中描述了用于将植入物引入患者的软组织中的独特装置和方法。 这些装置中的一个包括组织穿透构件，所述组织穿透构件被构造成整体穿过患者组织的体积。 组织穿透构件具有前端和后端，并且提供用于接收用于将植入物主体部分携带到患者组织体积中的植入物主体部分的接收空间。 该装置还包括植入物，其具有可拆卸地容纳在组织穿透构件的容纳空间中的植入物主体部分。 植入物主体部分构造成从患者组织体积中的接收空间展开，以便沿着由组织穿透构件穿过的通道保持展开。

    Continuously variable graded artificial dielectrics using nanostructures
    10.
    发明授权
    Continuously variable graded artificial dielectrics using nanostructures 失效
    使用纳米结构的连续可变分级人造电介质

    公开(公告)号：US08089152B2

    公开(公告)日：2012-01-03

    申请号：US11589988

    申请日：2006-10-31

    申请人： Jeffrey Miller

    发明人： Jeffrey Miller

    IPC分类号： H01L23/46

    CPC分类号： H01L29/4908 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/18 ,  G11C2213/81 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0537 ,  H01L2924/0002 ,  Y10T428/249921 ,  Y10T428/249924 ,  H01L2924/00

    摘要： Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.

    摘要翻译： 公开了使用纳米结构的分级人造电介质，例如纳米线。 分级人造电介质包括具有嵌入电介质材料内的多个纳米结构（如纳米线）的材料（通常为电介质）。 纳米结构的一个或多个特征在电介质内的第一区域在空间上变化到电介质内的第二区域，以产生在空间上变化的渐变人造电介质的介电常数。 可以变化的特征包括但不限于纳米结构密度，纳米结构长度，纳米结构长宽比，纳米结构氧化物比和纳米结构对准。 还提供了生产分级人造电介质的方法。 诸如天线的各种电子设备可以使用具有纳米结构的分级人造电介质来提高性能。