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16 条记录 (耗时 0.024 秒)

    Edge-emitting LED light source
    1.
    发明申请
    Edge-emitting LED light source 审中-公开
    边缘发光LED光源

    公开(公告)号：US20070029555A1

    公开(公告)日：2007-02-08

    申请号：US11197010

    申请日：2005-08-04

    申请人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    发明人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0756 ,  H01L25/075 ,  H01L33/02 ,  H01L33/08 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.

    摘要翻译： 边缘发光LED光源，以及制造边缘发光LED光源的方法。 边缘发射LED光源具有彼此靠近布置的多个边缘发射LED，以限定边缘发射LED的阵列。 阵列中的多个边缘发光LED中的每一个单独发射的光束一起形成具有大致二维横截面形状的单个光束，例如正方形或其它矩形形状，以及增加的整体光线 助焊剂

    Structures for reducing operating voltage in a semiconductor device
    4.
    发明申请
    Structures for reducing operating voltage in a semiconductor device 失效
    用于降低半导体器件中的工作电压的结构

    公开(公告)号：US20070034853A1

    公开(公告)日：2007-02-15

    申请号：US11203917

    申请日：2005-08-15

    申请人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    发明人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/305

    摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

    摘要翻译： 发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种 材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

    Ohmic contact on p-type GaN
    5.
    发明申请
    Ohmic contact on p-type GaN 失效
    p型GaN上的欧姆接触

    公开(公告)号：US20070069380A1

    公开(公告)日：2007-03-29

    申请号：US11234993

    申请日：2005-09-26

    申请人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    发明人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

    摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

    Edge-emitting LED assembly
    6.
    发明申请
    Edge-emitting LED assembly 有权
    边缘发光LED组件

    公开(公告)号：US20070069228A1

    公开(公告)日：2007-03-29

    申请号：US11235592

    申请日：2005-09-26

    申请人： Jeffrey Miller ,  Steven Lester ,  Virginia Robbins

    发明人： Jeffrey Miller ,  Steven Lester ,  Virginia Robbins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46

    摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

    摘要翻译： 根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件 比外部发光面。 反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。 反射光的至少一部分然后从外部发射表面发射。

    Methods for oriented growth of nanowires on patterned substrates
    10.
    发明申请
    Methods for oriented growth of nanowires on patterned substrates 有权
    在图案化衬底上纳米线定向生长的方法

    公开(公告)号：US20080038521A1

    公开(公告)日：2008-02-14

    申请号：US11641946

    申请日：2006-12-20

    申请人： Virginia Robbins

    发明人： Virginia Robbins

    IPC分类号： B05D5/12

    CPC分类号： C30B25/04 ,  C30B29/62 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  Y10T428/24917

    摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

    摘要翻译： 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施例中，提供了用于纳米线生长和掺杂的方法，包括使用硅前体的组合的外延取向纳米线生长的方法，以及我们用于生长取向的纳米线的图案化衬底。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。