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    Buried heterostructure quantum cascade laser
    4.
    发明申请
    Buried heterostructure quantum cascade laser 失效
    埋入异质结量子级联激光器

    公开(公告)号：US20060203865A1

    公开(公告)日：2006-09-14

    申请号：US11076599

    申请日：2005-03-09

    申请人： David Bour ,  Scott Corzine

    发明人： David Bour ,  Scott Corzine

    IPC分类号： H01S5/00

    CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01S5/2226 ,  H01S5/3402

    摘要： A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.

    摘要翻译： 掩埋异质结量子级联激光器结构使用反向偏置结实现电流阻塞。 可以调整结构的掺杂和脊宽以提供有效的模式鉴别。

    Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD
    5.
    发明申请
    Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
    具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件

    公开(公告)号：US20050276557A1

    公开(公告)日：2005-12-15

    申请号：US11154034

    申请日：2005-06-16

    申请人： David Bour ,  Scott Corzine

    发明人： David Bour ,  Scott Corzine

    IPC分类号： G02B6/10 ,  G02B6/13 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/343

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

    摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

    摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

    Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
    6.
    发明申请
    Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
    具有通过外延层过度生长制造的环形激光器的半导体系统

    公开(公告)号：US20070041419A1

    公开(公告)日：2007-02-22

    申请号：US11209994

    申请日：2005-08-22

    申请人： Michael Tan ,  Scott Corzine ,  David Bour

    发明人： Michael Tan ,  Scott Corzine ,  David Bour

    IPC分类号： H01S3/083

    CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2272 ,  H01S5/34 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

    摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

    摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

    Nitride semiconductor vertical cavity surface emitting laser
    9.
    发明申请
    Nitride semiconductor vertical cavity surface emitting laser 失效
    氮化物半导体垂直腔表面发射激光器

    公开(公告)号：US20070036186A1

    公开(公告)日：2007-02-15

    申请号：US11203699

    申请日：2005-08-15

    申请人： Scott Corzine ,  David Bour

    发明人： Scott Corzine ,  David Bour

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0424 ,  B82Y20/00 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/20 ,  H01S5/34333 ,  H01S2304/12

    摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

    摘要翻译： 在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。 有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。 接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。 第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。 还描述了制造VCSEL的方法。

    Single ELOG growth transverse p-n junction nitride semiconductor laser
    10.
    发明申请
    Single ELOG growth transverse p-n junction nitride semiconductor laser 审中-公开
    单个ELOG生长横向p-n结氮化物半导体激光器

    公开(公告)号：US20060284163A1

    公开(公告)日：2006-12-21

    申请号：US11154010

    申请日：2005-06-15

    申请人： David Bour ,  Scott Corzine

    发明人： David Bour ,  Scott Corzine

    IPC分类号： H01L31/00

    CPC分类号： H01S5/0424 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/30 ,  H01S5/3202 ,  H01S5/34 ,  H01S5/34333 ,  H01S2304/12

    摘要： A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally growing edges and forming the transverse junction in a single ELOG-MOCVD (metal organic chemical vapor deposition) growth step. Vertical quantum wells may be used for both GaN vertical cavity surface emitting lasers (VCSELs) and GaN edge emitting lasers.

    摘要翻译： 垂直量子阱氮化物激光器可以通过ELOG（外延横向过度生长）制造，垂直量子阱通过沉积在横向生长边缘的垂直面上而形成，并在单个ELOG-MOCVD（金属 有机化学气相沉积）生长步骤。 垂直量子阱可用于GaN垂直腔表面发射激光器（VCSEL）和GaN边缘发射激光器。