利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.014 秒)

    Device and method to measure the complex permeability of thin films at ultra-high frequencies
    1.
    发明授权
    Device and method to measure the complex permeability of thin films at ultra-high frequencies 失效
    测量超高频薄膜复合磁导率的装置和方法

    公开(公告)号：US5744972A

    公开(公告)日：1998-04-28

    申请号：US627638

    申请日：1996-04-05

    申请人： Vladislav Korenivski ,  Zhengxiang Ma ,  Paul Matthew Mankiewich ,  Paul Anthony Polakos ,  Robert Bruce van Dover

    发明人： Vladislav Korenivski ,  Zhengxiang Ma ,  Paul Matthew Mankiewich ,  Paul Anthony Polakos ,  Robert Bruce van Dover

    IPC分类号： G01R33/12 ,  G01N27/72

    CPC分类号： G01R33/1223

    摘要： The device has a single strip having a first end, a second end, a length and a width. The first end of the strip is curved toward the second end of the strip to form a loop having a height. The length is approximately 10 mm, the width is approximately 5-8 mm, and the height is approximately 0.8-1.2 mm. The loop is preferably fabricated from copper. The loop is mounted directly to a test instrument such as a computer controlled impedance analyzer or network analyzer. The test instrument measures the inductance and resistance of the loop with no thin film sample placed therein, and then measures the inductance and resistance of the loop containing the sample under test. From these measurements, the device ultimately derives the permeability of the sample under test. The method for measuring the complex permeability of thin films at ultra-high frequencies includes the steps of recording the residual inductance and resistance for the loop empty; measuring the total inductance and resistance for the loop loaded with the sample under test; determining the change in resistance by subtracting the resistance of the loop without any sample from the resistance when the loop is loaded with the sample under test; determining the change in inductance by subtracting the inductance of the loop without any sample from the inductance when the loop is loaded with the sample under test; and calculating permeability.

    摘要翻译： 该装置具有单条，其具有第一端，第二端，长度和宽度。 条带的第一端朝向带的第二端弯曲以形成具有高度的环。 长度约为10mm，宽度约为5-8mm，高度约为0.8-1.2mm。 该环优选由铜制成。 该回路直接安装在诸如计算机控制的阻抗分析仪或网络分析仪之类的测试仪器上。 测试仪器测量没有薄膜样品的环路的电感和电阻，然后测量包含被测试样品的回路的电感和电阻。 从这些测量中，该装置最终导出被测试样品的渗透性。 用于测量超高频薄膜复合磁导率的方法包括记录剩余电感和电阻为空的步骤; 测量负载待测试样品的环路的总电感和电阻; 当环路装载被测试样品时，通过从电阻中减去没有任何样品的环路的电阻来确定电阻的变化; 当环路加载被测试样品时，通过从电感中减去没有任何样本的环路的电感来确定电感的变化; 并计算渗透率。

    Article comprising an inductive element with a magnetic thin film
    2.
    发明授权
    Article comprising an inductive element with a magnetic thin film 失效
    该文章包括具有磁性薄膜的电感元件

    公开(公告)号：US5847634A

    公开(公告)日：1998-12-08

    申请号：US902686

    申请日：1997-07-30

    申请人： Vladislav Korenivski ,  Robert Bruce van Dover

    发明人： Vladislav Korenivski ,  Robert Bruce van Dover

    IPC分类号： H01F10/14 ,  H01F10/12 ,  H01F10/13 ,  H01F17/00 ,  H01F17/04 ,  H01F30/00 ,  H01L21/822 ,  H01L27/04 ,  H01F5/00 ,  H01F17/06 ,  H01F27/24

    CPC分类号： H01F17/0006 ,  H01F17/04

    摘要： A thin film inductive element according to this invention comprises an elongate conductor, and spaced apart magnetic strips that substantially surround the conductor, with dielectric material between the magnetic strips and the conductor. The inductive element can have relatively high inductance and low loss, can be used in linear form, meander on spiral form, or any other desired form, is suitable for use at RF frequencies, and can be integrated with conventional circuitry. Criteria for choosing the length of the magnetic strips and the thickness of the dielectric are disclosed.

    摘要翻译： 根据本发明的薄膜感应元件包括细长导体和基本上围绕导体的间隔开的磁条，其中电介质材料在磁条和导体之间。 电感元件可以具有相对较高的电感和低损耗，可以线性形式使用，螺旋形式上的曲折或任何其它所需形式，适用于RF频率，并可与常规电路集成。 公开了用于选择磁条的长度和电介质的厚度的标准。

    Article comprising spinel-structure material on a substrate, and method of making the article
    3.
    发明授权
    Article comprising spinel-structure material on a substrate, and method of making the article 失效
    在基材上包含尖晶石结构材料的制品以及制造该制品的方法

    公开(公告)号：US5728421A

    公开(公告)日：1998-03-17

    申请号：US697402

    申请日：1996-08-23

    申请人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    发明人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    IPC分类号： C30B23/06 ,  H01F10/18 ,  H01F10/193 ,  H01F10/20 ,  H01F10/30 ,  H01F17/04 ,  H01F41/20 ,  H01L21/822 ,  H01L27/04 ,  H01L29/34 ,  B05D5/12 ,  C23C16/40

    CPC分类号： H01F41/20 ,  H01F10/20 ,  H01F10/265 ,  H01F10/30

    摘要： Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500.degree. C.) processing if an appropriate template layer is deposited on a conventional substrate body (e.g., SrTiO.sub.3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0.79-0.89 nm, preferably within about 0.015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe.sub.2 O.sub.4 film was deposited at 400.degree. C. on a CoCr.sub.2 O.sub.4 template which had been deposited on (100) SrTiO.sub.3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe.sub.2 O.sub.4 on SrTiO.sub.3), and was comparable to that of a NiFe.sub.2 O.sub.4 film on SrTiO.sub.3 that was annealed at 1000.degree. C. The ability to produce ferrite films of good magnetic properties without high temperature treatment inter alia makes possible fabrication of on-board magnetic components (e.g., inductor) on Si chips designed for operation at relatively high frequencies, e.g., >10 MHz, even at about 100 MHz.

    摘要翻译： 如果在常规基板主体（例如，SrTiO 3，立方氧化锆，Si）上沉积适当的模板层，则不需要高温（> 500℃）处理即可获得具有优异结晶和磁性能的铁氧体膜，铁素体沉积在 退火模板。 该模板是尖晶石结构金属氧化物，其晶格常数在铁素体的晶格常数的0.79-0.89nm范围内，优选在约0.015nm范围内。 示例性地，在400℃下沉积在（100）SrTiO 3上的CoCr 2 O 4模板上沉积NiFe 2 O 4膜。 铁氧体膜在4000Oe下的磁化强度是同样沉积的比较铁氧体膜（SrTiO3上的NiFe2O4）的磁化强度的两倍，并且与在1000℃退火的SrTiO 3上的NiFe 2 O 4膜的磁化相当。 生产具有良好磁性能的铁氧体膜，而不需要高温处理，特别是可以在设计用于在相对高的频率（例如> 10MHz）操作的Si芯片上制造车载磁性部件（例如，电感器），甚至在约100MHz。

    Method of making a superconductive oxide body
    6.
    发明授权
    Method of making a superconductive oxide body 失效
    制造超导氧化物体的方法

    公开(公告)号：US06291402B1

    公开(公告)日：2001-09-18

    申请号：US07426485

    申请日：1989-10-23

    申请人： Sungho Jin ,  Richard Curry Sherwood ,  Thomas Henry Tiefel ,  Robert Bruce van Dover

    发明人： Sungho Jin ,  Richard Curry Sherwood ,  Thomas Henry Tiefel ,  Robert Bruce van Dover

    IPC分类号： B05D512

    CPC分类号： H01L39/143 ,  H01L39/126 ,  H01L39/2429 ,  H01L39/248

    摘要： Some mechanical, electrical, and thermal properties of high Tc superconductors such as (Ba, Y) cuprates can be substantially improved by the dispersal of an appropriate metal in the superconductive body. For instance, mixing Ag particles with superconductive powder of nominal composition Ba2YCu3O7 and processing the mixture in the conventional manner can produce superconductive bodies having Tc of about 93 K and substantially greater fracture strength and normal state electrical and thermal conductivity than otherwise identical bodies that do not contain Ag particles.

    摘要翻译： 通过在超导体中分散适当的金属，可以显着提高高Tc超导体（如Ba，Y）铜酸盐的一些机械，电和热性能。 例如，将Ag颗粒与标称组成Ba2YCu3O7的超导粉末混合并以常规方式处理混合物可以产生具有大约93K的Tc的超导体，并且具有比其它不相同的相同体的断裂强度和正常状态的电和热导率更高的超导体 含有Ag颗粒。

    Dielectric materials of amorphous compositions and devices employing same
    9.
    发明授权
    Dielectric materials of amorphous compositions and devices employing same 失效
    无定形组合物的介电材料和采用其的器件

    公开(公告)号：US5912797A

    公开(公告)日：1999-06-15

    申请号：US936132

    申请日：1997-09-24

    申请人： Lynn Frances Schneemeyer ,  Robert Bruce van Dover

    发明人： Lynn Frances Schneemeyer ,  Robert Bruce van Dover

    IPC分类号： H01G4/33 ,  H01B3/00 ,  H01B3/12 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01G4/06

    CPC分类号： H01L28/55 ,  H01L21/31691

    摘要： A thin dielectric film that uses an amorphous composition of R--Sn--Ti--O as the main component is disclosed, wherein R is Zr or Hf, having particular application for use in a capacitor of a DRAM cell. The preferable range of the dielectric thin film composition is centered around Zr.sub.x Sn.sub.y Ti.sub.z O.sub.w, where 0.1.ltoreq.x.ltoreq.1.8; 0.1.ltoreq.y.ltoreq.1.6; 0.2.ltoreq.z.ltoreq.1.9; and 2.0.ltoreq.w.ltoreq.4.0; and x+y+z=2. Preferably, x is about 0.2, y is about 0.2, and z is about 0.6. Doping of the composition with nitrogen is further disclosed as improving the dielectric properties and uniformity of the film.

    摘要翻译： 公开了使用R-Sn-Ti-O的非晶质组合物作为主要成分的薄电介质膜，其中R是Zr或Hf，其特别适用于DRAM电池的电容器。 电介质薄膜组合物的优选范围以Zr x Sn y Ti z O w为中心，其中0.1≤x≤1.8; 0.1