公开(公告)号：US3565704A

公开(公告)日：1971-02-23

申请号：US3565704D

申请日：1967-12-19

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHU TING LI

IPC: C23C16/30 ,  H01L21/205 ,  H01L23/29 ,  H01L7/36

CPC classification number: H01L21/02389 ,  C23C16/303 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/113 ,  H01L2924/00

Abstract: PROCESS FOR PRODUCING FILMS OF ALUMINUM NITRIDE IN A FLOW SYSTEM AND IN A CLOSED SYSTEM. IN THE FLOW SYSTEM THE AMMONOLYSIS OF AN ALUMINUM TRIHALIDE OR AN ALUMINUM TRIALKYL IS CAPABLE OF PRODUCING FILMS OF SINGLE CRYSTAL ALUMINUM NITRIDE SUITABLE FOR USE IN JUNCTION DEVICES OR FILMS OF AMORPHOUS ALUMINUM NITRIDE SUITABLE FOR USE AS A DIELECTRIC IN ELECTRONIC DEVICES. IN THE CLOSED SYSTEM, ALUMINUM NITRIDE FROM A SUITABLE LOCATED SOURCE IS TRANSPORTED BY EITHER A HYDROGEN HALIDE OR AN AMMONIUM HALIDE TO A SUITABLE SUBSTRATE MAINTAINED AT A LOWER TEMPERATURE WHERE A FILM OF ALUMINUM NITRIDE IS FORMED ON THE SUBSTRATE.

公开(公告)号：US3501356A

公开(公告)日：1970-03-17

申请号：US3501356D

申请日：1966-05-12

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHU TING LI

IPC: C30B29/00 ,  C23C11/00 ,  C23C13/00

CPC classification number: C30B29/00 ,  Y10S148/148

公开(公告)号：US3658572A

公开(公告)日：1972-04-25

申请号：US3658572D

申请日：1968-11-05

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHU TING LI

IPC: B05B7/22 ,  C01B31/00 ,  C01B31/30 ,  C23C16/513 ,  H01J37/32 ,  H05H1/42

CPC classification number: H05H1/42 ,  B05B7/226 ,  C01B32/00 ,  C01B32/90 ,  C01P2004/80 ,  C01P2006/80 ,  C23C16/513 ,  H01J37/32

Abstract: A plasma-forming fluid consisting of a monatomic gas and at least one other gas having a diatomic molecule is employed to pyrolytically produce chemical elements and chemical compounds, such, for example, as pyrolytic carbon and refractory carbides. Pyrolytic carbon having a density of from 2.1 to 2.25 grams per cubic centimeter and an impurity content of less than 20 parts per million is made from a reactant material comprising aliphatic halides of carbon introduced into the plasma-forming fluid.

Abstract translation: 由单原子气体和至少一种具有双原子分子的其它气体组成的等离子体形成流体被用于热解地产生化学元素和化学化合物，例如热解碳和难熔碳化物。 密度为2.1〜2.25克/立方厘米，杂质含量低于百万分之二十的热解碳由包含引入等离子体形成流体的碳的脂肪族卤化物的反应物料制成。

公开(公告)号：US3615878A

公开(公告)日：1971-10-26

申请号：US3615878D

申请日：1970-01-30

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHANG HUNG CHI ,  CHU TING LI

IPC: C30B15/00 ,  C30B15/02 ,  H05B6/30 ,  B01J17/02

CPC classification number: C30B29/40 ,  C30B15/02 ,  H05B6/30 ,  Y10S117/906 ,  Y10S148/022 ,  Y10S148/056 ,  Y10S148/107 ,  Y10S438/909 ,  Y10S438/971

Abstract: A semiconductor material having a volatile component is thermally treated in an ambient formed by a gaseous mixture which constantly maintains the stoichiometry of the semiconductor material during the thermal treatment.

公开(公告)号：US3556732A

公开(公告)日：1971-01-19

申请号：US3556732D

申请日：1968-01-31

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHANG HUNG CHI ,  CHU TING LI

IPC: C30B13/00 ,  C30B15/00 ,  C30B15/02 ,  B01D9/02

CPC classification number: C30B15/02 ,  C30B29/40 ,  Y10S117/906 ,  Y10S148/041 ,  Y10S148/107 ,  Y10T117/1016 ,  Y10T117/1032

Abstract: A SEMICONDUCTOR MATERIAL HAVING A VOLATILE COMPONENT IS THERMALLY TREATED IN AN AMBIENT FORMED BY A GASEOUS MIXTURE WHICH CONSTANTLY MAINTAINS THE STOICHIOMETRY OF THE SEMICONDUCTOR MATERIAL DURING THE THERMAL TREATMENT.

公开(公告)号：US3512056A

公开(公告)日：1970-05-12

申请号：US3512056D

申请日：1967-04-25

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHU TING LI ,  KANNAM PETER J ,  WALCZAK DONALD A

IPC: H01L21/205 ,  H01L29/00 ,  H01L29/73 ,  H01L7/36 ,  H01L11/00

CPC classification number: H01L29/00 ,  H01L29/73 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/051