公开(公告)号：US06899796B2

公开(公告)日：2005-05-31

申请号：US10428476

申请日：2003-05-01

申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  B05D1/36

CPC分类号： C23C14/046 ,  C23C14/185 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76877

摘要： A two-step method of filling copper into a high-aspect ratio via or dual-damascene structure. The first step sputters at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole. The initial copper sputtering is preferably performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter resulting overhangs from the corners while depositing deep in the hole. The second step may include either electrochemical plating or sputtering performed at a higher temperature, e.g., at least 200° C. and with lower wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma.

摘要翻译： 将铜填充到高纵横比或双镶嵌结构的两步法。 第一步在不超过100℃的低温下进行喷射，并且至少部分高晶片偏置，从而填充孔的下半部分。 初始铜溅射优选通过多个低水平和高水平基座偏压的周期进行，以在暴露的拐角上沉积铜，并且在沉积在孔中深处时从角部溅射所得到的突出端。 第二步可以包括在较高温度例如至少200℃进行的电化学电镀或溅射，并且具有较低的晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。

公开(公告)号：US06884329B2

公开(公告)日：2005-04-26

申请号：US10340564

申请日：2003-01-10

申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76877

摘要： A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.

摘要翻译： 一种通过等离子体溅射工艺将铜填充到高纵横比通孔并允许消除电化学电镀的方法。 在本发明的一个方面，溅射被分为在不超过100℃的低温下进行的第一步骤和至少部分高晶片偏压，从而填充孔的下半部分，并且第二步骤 步骤在较高的温度例如至少200℃进行，并且至少部分低晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。 在另一方面，即使在最终填充阶段，铜溅射也是通过多个低级和高级底座偏压循环进行的，以便在暴露的拐角上沉积铜并从拐角溅射。

公开(公告)号：US06277249B1

公开(公告)日：2001-08-21

申请号：US09518180

申请日：2000-03-02

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1435

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。 例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场， 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US06485618B2

公开(公告)日：2002-11-26

申请号：US09917985

申请日：2001-07-30

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1434

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US06274008B1

公开(公告)日：2001-08-14

申请号：US09677946

申请日：2000-10-02

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1434

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US06730196B2

公开(公告)日：2004-05-04

申请号：US10210953

申请日：2002-08-01

申请人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

发明人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C1435

CPC分类号： H01J37/3455 ,  C23C14/046 ,  C23C14/165 ,  C23C14/358 ,  H01J37/3405 ,  H01L21/76877

摘要： A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.

公开(公告)号：US06758949B2

公开(公告)日：2004-07-06

申请号：US10241114

申请日：2002-09-10

申请人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

发明人： Wei D. Wang ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C1435

CPC分类号： C23C14/345 ,  C23C14/221 ,  C23C14/35 ,  C23C14/352 ,  H01J37/3266 ,  H01J37/3402

摘要： A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.

摘要翻译： 金属气相沉积反应器包括具有包括天花板和侧壁的主室外壳的初级反应室。 反应器还包括二次反应器室，该二次反应器室具有二次室外壳和在待沉积在所述半导体晶片上的金属物质形成的次级室内的金属源靶。 工艺气体入口将工艺气体提供到靠近所述金属源靶的工作表面的次级室的区域中。 连接在所述金属源靶和所述次室壳体的导电部分之间的直流电源具有足够的功率以支持在金属源靶的工作表面附近的工艺气体的离子化，从而形成等离子体，从而将金属离子和中性粒子从 金属源目标的工作面。

公开(公告)号：US20130139878A1

公开(公告)日：2013-06-06

申请号：US13266738

申请日：2011-04-07

申请人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

发明人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/076 ,  H01L31/1864 ,  Y02E10/548

摘要： Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer.

摘要翻译： 本发明的实施例提供了一种形成太阳能电池的方法，包括在基底上形成包含氧化铝的层，并在包含氧化铝的层上形成透明导电层。 该方法还可以包括在包含氧化铝的层上形成透明导电籽晶层，并在透明导电种子层上形成透明导电体层。 本发明的实施例还包括具有基底的光伏器件，与基底相邻的氧化铝层，与氧化铝相邻的含氧化锌的透明导电籽晶层和与锌相邻的含氧化锌的透明导电体层 含氧化物的透明导电种子层。

公开(公告)号：US06837975B2

公开(公告)日：2005-01-04

申请号：US10211473

申请日：2002-08-01

申请人： Wei D. Wang ,  Praburam Gopalraja

发明人： Wei D. Wang ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/35 ,  H01J37/34 ,  H01L21/768

CPC分类号： H01J37/3455 ,  C23C14/046 ,  C23C14/165 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/76877

摘要： A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.

摘要翻译： 一种用于溅射靶的磁控管系统，其具有面向待涂覆的晶片的环形拱顶并具有内侧壁和外侧壁以及屋顶。 一个小磁控管位于屋顶上。 沿着目标轴线具有第一磁体极性的第一磁体组件位于内侧壁的后面。 具有相对的第二相对磁极性的第二磁体组件设置在外侧壁的后部，并且具有比第一磁体组件大得多的磁强度，但是其强度围绕目标轴线不对称地分布。 第二磁体组件和屋顶组件围绕目标轴线一起旋转。 旋转的不对称侧壁磁体组件也可以与具有或不具有屋顶磁控管的中空阴极靶一起使用。

公开(公告)号：US08119525B2

公开(公告)日：2012-02-21

申请号：US12037578

申请日：2008-02-26

申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

IPC分类号： H01L21/44

CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。