公开(公告)号：US20130200444A1

公开(公告)日：2013-08-08

申请号：US13583121

申请日：2012-03-22

申请人： Wei Wang ,  Jing Wang ,  Mei Zhao ,  Renrong Liang

发明人： Wei Wang ,  Jing Wang ,  Mei Zhao ,  Renrong Liang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/47 ,  H01L21/02115 ,  H01L21/02285 ,  H01L29/401 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/7839

摘要： A Schottky barrier field effect transistor with a carbon-containing insulation layer and a method for fabricating the same are provided. The Schottky barrier field effect transistor comprises: a substrate; a gate stack formed on the substrate; a metal source and a metal drain formed in the substrate on both sides of the gate stack respectively; and the carbon-containing insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively, in which a material of the carbon-containing insulation layer is organic molecular chains containing an alkyl group.

摘要翻译： 提供了具有含碳绝缘层的肖特基势垒场效应晶体管及其制造方法。 肖特基势垒场效应晶体管包括：衬底; 形成在所述基板上的栅极堆叠; 金属源和金属漏极分别形成在栅极堆叠两侧的基板中; 以及分别形成在基板和金属源之间以及基板和金属排出口之间的含碳绝缘层，其中含碳绝缘层的材料是含有烷基的有机分子链。

公开(公告)号：US20130320446A1

公开(公告)日：2013-12-05

申请号：US13576933

申请日：2012-07-18

申请人： Wei Wang ,  Jing Wang ,  Lei Guo

发明人： Wei Wang ,  Jing Wang ,  Lei Guo

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/02521 ,  H01L21/0237 ,  H01L21/02488 ,  H01L29/045 ,  H01L29/7849 ,  H01L29/78603

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a rare earth oxide layer formed on the semiconductor substrate; a channel region formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region respectively, in which a relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底上的稀土氧化物层; 形成在稀土氧化物层上的沟道区; 以及源极区域和漏极区域，分别形成在沟道区域的两侧，其中稀土氧化物层的晶格常数a与沟道区域的半导体材料的晶格常数b之间的关系和/或 源极区和漏极区是a =（n±c）b，其中n是整数，c是晶格常数的失配比，0

公开(公告)号：US08546857B1

公开(公告)日：2013-10-01

申请号：US13576937

申请日：2012-07-16

申请人： Jing Wang ,  Lei Guo ,  Wei Wang

发明人： Jing Wang ,  Lei Guo ,  Wei Wang

IPC分类号： H01L29/08 ,  H01L29/417 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a source region and a drain region defined in the semiconductor substrate respectively, and a trench formed in the source region and/or the drain region, in which a rare earth oxide layer is formed in the trench; a source and/or a drain formed on the rare earth oxide layer; and a channel region formed between the source and the drain. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the source and/or the drain and/or the channel region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 限定在半导体衬底中的源极区和漏极区，以及在沟道中形成有稀土氧化物层的源极区和/或漏极区中形成的沟槽; 在稀土氧化物层上形成的源极和/或漏极; 以及形成在源极和漏极之间的沟道区域。 源极和/或漏极和/或沟道区的半导体材料的稀土氧化物层的晶格常数a与晶格常数b之间的关系为a =（n±c）b，其中n为 整数，c是晶格常数的失配比，0

公开(公告)号：US20130240958A1

公开(公告)日：2013-09-19

申请号：US13521051

申请日：2012-05-29

申请人： Jing Wang ,  Lei Guo ,  Wei Wang

发明人： Jing Wang ,  Lei Guo ,  Wei Wang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/76283 ,  H01L29/7846

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; an active region formed in the semiconductor substrate, in which the active region comprises: a channel region, and a source region and a drain region formed on both sides of the channel region respectively; and a first isolation trench formed in the semiconductor substrate and on both sides of the active region, in which a first rare earth oxide layer is formed in each first isolation trench to produce a stress in the channel region in a channel length direction.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在所述半导体衬底中的有源区，其中所述有源区包括：沟道区，以及分别形成在所述沟道区两侧的源区和漏区; 以及形成在所述半导体衬底中并且在所述有源区的两侧上形成的第一隔离沟槽，其中在每个第一隔离沟槽中形成第一稀土氧化物层，以在沟道长度方向上的沟道区域中产生应力。

公开(公告)号：US20120025279A1

公开(公告)日：2012-02-02

申请号：US13132760

申请日：2011-05-10

申请人： Jing Wang ,  Wei Wang ,  Lei Guo ,  Jun Xu

发明人： Jing Wang ,  Wei Wang ,  Lei Guo ,  Jun Xu

IPC分类号： H01L29/812 ,  H01L21/338

CPC分类号： H01L29/66636 ,  H01L29/0895 ,  H01L29/1054 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/66643 ,  H01L29/78 ,  H01L29/7839

摘要： A low Schottky barrier semiconductor structure is provided, comprising: a substrate; a SiGe layer with low Ge content formed on the substrate; a channel layer with high Ge content formed on the SiGe layer; a gate stack formed on the substrate and a side wall of one or more layers formed on both sides of the gate stack; a metal source and a metal drain formed in the channel layer and on the both sides of the gate stack respectively; and an insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively.

摘要翻译： 提供了一种低肖特基势垒半导体结构，包括：衬底; 在基板上形成具有低Ge含量的SiGe层; 在SiGe层上形成具有高Ge含量的沟道层; 形成在所述基板上的栅极叠层和形成在所述栅极堆叠的两侧上的一个或多个层的侧壁; 金属源和金属漏极分别形成在沟道层中和栅极堆叠的两侧; 以及分别形成在基板和金属源之间以及基板和金属引线之间的绝缘层。

公开(公告)号：US20130320413A1

公开(公告)日：2013-12-05

申请号：US13576934

申请日：2012-07-18

申请人： Wei Wang ,  Jing Wang ,  Lei Guo

发明人： Wei Wang ,  Jing Wang ,  Lei Guo

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L29/7849 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a trench formed in the semiconductor substrate, in which a rare earth oxide layer is formed in the trench; a channel region partly or entirely formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region, respectively. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底中的沟槽，其中在沟槽中形成稀土氧化物层; 部分或全部形成在稀土氧化物层上的沟道区; 以及分别形成在沟道区两侧的源区和漏区。 稀土氧化物层的晶格常数a与沟道区域和/或源极区域和漏极区域的半导体材料的晶格常数b之间的关系为a =（n±c）b，其中n为 整数，c是晶格常数的失配比，0

公开(公告)号：US12115004B2

公开(公告)日：2024-10-15

申请号：US17445866

申请日：2021-08-25

申请人： Luyun Qin ,  Ke Liao ,  Xiaojing Fan ,  Jinting Hou ,  Wei Wang

发明人： Luyun Qin ,  Ke Liao ,  Xiaojing Fan ,  Jinting Hou ,  Wei Wang

IPC分类号： A61B5/00

CPC分类号： A61B5/7232 ,  A61B5/7203 ,  A61B5/7225

摘要： Disclosed are a method and apparatus for processing physiological signals. The method is inclusive of steps of obtaining the physiological signals; grouping the physiological signals based on their sampling frequencies and/or generation mechanisms, so as to acquire grouping results; and compressing, based on the grouping results, each group of physiological signals.

公开(公告)号：US20240312634A1

公开(公告)日：2024-09-19

申请号：US18183493

申请日：2023-03-14

申请人： Wei Wang ,  Moira E. Pierce ,  Matthew W. Brown

发明人： Wei Wang ,  Moira E. Pierce ,  Matthew W. Brown

IPC分类号： G16H50/30 ,  G16H10/60

CPC分类号： G16H50/30 ,  G16H10/60

摘要： A mental health equipment data store may contain electronic records associated with mental health equipment identifiers. For each mental health equipment identifier, the data store may include a communication address and associated equipment parameters. A risk relationship data store may contain electronic records associated with parties having risk relationships with an enterprise. A back-end application computer server may associate a selected equipment identifier in the mental health equipment data store with a selected party having a risk relationship with the enterprise. The server may update the risk relationship data store with the selected equipment identifier and arrange to collect selected mental health data for the selected party in accordance with the communication address of the selected equipment identifier. The selected mental health data is input to a predictive model algorithm, and the server automatically executes a treatment workflow for the selected party based on an output of the algorithm.

公开(公告)号：USD1040963S1

公开(公告)日：2024-09-03

申请号：US29851189

申请日：2022-08-26

申请人： Wei Wang

设计人： Wei Wang

摘要： FIG. 1 is a first perspective view of a fishing rod holder showing my new design;
FIG. 2 is a second perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines shown in the drawings depict portions of the fishing rod holder that form no part of the claimed design.

公开(公告)号：US20230285456A1

公开(公告)日：2023-09-14

申请号：US17625896

申请日：2020-07-17

申请人： Fu-Sen Liang ,  Wei Wang ,  Judy Cannon ,  Alex Huang ,  Huong Nguyen ,  UNM RAINFOREST INNOVATIONS ,  CASE WESTERN RESERVE UNIVERSITY

发明人： Fu-Sen Liang ,  Wei Wang ,  Judy Cannon ,  Alex Huang ,  Huong Nguyen

IPC分类号： A61K35/17 ,  C12N15/62 ,  A61P35/00 ,  A61K47/66 ,  A61K38/17

CPC分类号： A61K35/17 ,  A61K38/177 ,  A61K47/66 ,  A61P35/00 ,  C12N15/62

摘要： A modified T cell includes exogenous polynucleotides that encode components of a therapeutic expression system. A first exogenous polynucleotide encodes a therapeutic polypeptide operably linked to a regulatory region inducible by inducer. A second exogenous polynucleotide encodes polypeptide components of a chemical induced proximity (CIP) complex. A third exogenous polynucleotide that encodes a chimeric antigen receptor that specifically binds to an antigen.