Opposed-magnet bearing with interposed superconductor
    6.
    发明授权
    Opposed-magnet bearing with interposed superconductor 失效
    带插入式超导体的对位磁铁

    公开(公告)号:US5159219A

    公开(公告)日:1992-10-27

    申请号:US701206

    申请日:1991-05-16

    摘要: A superconductor-magnet system having high thrust and stability, with a method for increasing the thrust and stability of such a system, comprises a first magnet, a second magnet and a superconductor. The magnets are in motion relative to each other and the superconductor is in motion relative to one and stationary relative to the other magnet. High thrust and stability can be achieved by increasing the magnetic field of the magnet in motion relative to the superconductor. Also disclosed are magnetic thrust and journal bearings utilizing the above system.

    摘要翻译: 具有高推力和稳定性的超导体 - 磁体系统以及用于增加这种系统的推力和稳定性的方法包括第一磁体,第二磁体和超导体。 磁体相对于彼此运动,并且超导体相对于另一个磁体相对于一个并且固定地运动。 通过增加磁体相对于超导体运动的磁场可以实现高推力和稳定性。 还公开了利用上述系统的磁力推力和轴颈轴承。

    Method to overcome instability of ultra-shallow semiconductor junctions
    10.
    发明申请
    Method to overcome instability of ultra-shallow semiconductor junctions 审中-公开
    克服超浅半导体结的不稳定性的方法

    公开(公告)号:US20050260836A1

    公开(公告)日:2005-11-24

    申请号:US10523127

    申请日:2003-07-17

    摘要: A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

    摘要翻译: 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定的电荷的方法包括以下步骤:将掺杂剂离子注入到表面层中; 清洁和氧化表面层,并对晶片进行两次退火,以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围,持续时间约为几分之一秒至小于约1000秒,斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时,更优选约60秒至约1小时。 退火过程都包括冷却过程。