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    METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS
    1.
    发明申请
    METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS 审中-公开
    激光扫描过程中激光聚焦平面测定的方法和系统

    公开(公告)号：US20150037915A1

    公开(公告)日：2015-02-05

    申请号：US14035402

    申请日：2013-09-24

    申请人： Wei-Sheng LEI ,  Brad Eaton ,  Apama IYER ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng LEI ,  Brad Eaton ,  Apama IYER ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  B23K26/03 ,  B23K26/04 ,  B23K26/06

    CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50

    摘要： In embodiments, a method of laser scribing a mask disposed over a semiconductor wafer includes determining a height of the semiconductor over which a mask layer is disposed prior to laser scribing the mask layer. In one embodiment the method includes: determining a height of the semiconductor wafer under the mask in a dicing street using an optical sensor and patterning the mask with a laser scribing process. The laser scribing process focuses a scribing laser beam at a plane corresponding to the determined height of the semiconductor wafer in the dicing street. Examples of determining the height of the semiconductor wafer can include directing a laser beam to the dicing street of the semiconductor wafer, which is transmitted through the mask and reflected from the wafer, and identifying an image on a surface of the wafer under the mask with a camera.

    摘要翻译： 在实施例中，激光划片设置在半导体晶片上方的掩模的方法包括确定在激光划线掩模层之前在其上设置掩模层的半导体的高度。 在一个实施例中，该方法包括：使用光学传感器在切割街道中确定半导体晶片下面的高度，并用激光划线工艺对掩模进行构图。 激光划线工艺将划线激光束聚焦在与切割街道中确定的半导体晶片的高度相对应的平面上。 确定半导体晶片的高度的示例可以包括将激光束引导到半导体晶片的切割街道，透射通过掩模并从晶片反射，并且在掩模下面在晶片的表面上识别图像， 相机。

    Uniform masking for wafer dicing using laser and plasma etch
    2.
    发明授权
    Uniform masking for wafer dicing using laser and plasma etch 有权
    使用激光和等离子体蚀刻的晶圆切割均匀掩模

    公开(公告)号：US09048309B2

    公开(公告)日：2015-06-02

    申请号：US13917366

    申请日：2013-06-13

    申请人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/00 ,  H01L21/78

    CPC分类号： H01L21/78

    摘要： Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

    摘要翻译： 描述了使用激光和等离子体蚀刻的用于晶片切割的均匀掩模。 在一个例子中，对具有多个具有凸起或柱状的集成电路的半导体晶片进行切割的方法包括在半导体晶片上方的掩模上均匀地旋转，该掩模由覆盖并保护集成电路的层组成。 然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

    WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH
    4.
    发明申请
    WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH 审中-公开
    通过激光切割和等离子体蚀刻混合方法制造出宽阔的KERF

    公开(公告)号：US20150028446A1

    公开(公告)日：2015-01-29

    申请号：US14513048

    申请日：2014-10-13

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/82 ,  H01L21/268 ,  H01L21/3065 ,  H01L27/04

    CPC分类号： H01L21/82 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/78 ,  H01L27/04

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，描述了通过使用激光划线和等离子体蚀刻混合方法的具有宽切口的晶片切割的方法。 例如，通过切割由切割街道分离的多个集成电路的半导体晶片的切割方法包括在半导体晶片上形成掩模，该掩模具有覆盖并保护集成电路的层。 该方法还包括用激光划线工艺对掩模进行图案化以提供具有用于每个切割街道的一对平行间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 每对平行间隙的每个间隙分开一段距离。 该方法还包括通过图案化掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

    LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK
    9.
    发明申请
    LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK 有权
    激光和等离子体刻蚀使用物理可拆卸的面膜

    公开(公告)号：US20120322237A1

    公开(公告)日：2012-12-20

    申请号：US13161036

    申请日：2011-06-15

    申请人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  C23F1/08

    CPC分类号： B23K26/40 ,  B23K26/0624 ,  B23K26/364 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/78

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模。 面罩覆盖并保护集成电路。 用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以形成单独的集成电路。 然后将图案化掩模与单个集成电路分离。