Probe Device for a Metrology Instrument and Method of Fabricating the Same
    2.
    发明申请
    Probe Device for a Metrology Instrument and Method of Fabricating the Same 有权
    计量仪器的探头装置及其制造方法

    公开(公告)号:US20090031792A1

    公开(公告)日:2009-02-05

    申请号:US11833104

    申请日:2007-08-02

    IPC分类号: G01B5/28

    CPC分类号: G01Q60/38

    摘要: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.

    摘要翻译: 制造诸如AFM的计量仪器的探针装置的方法包括提供具有前表面和后表面的基底,然后在基底的第一表面上形成尖端高度结构阵列,所述结构具有对应于可选尖端的不同深度 高度。 蚀刻衬底的背面,直到衬底的厚度基本上对应于所选择的尖端高度,优选通过视觉监测该蚀刻和/或监测蚀刻速率。 从晶片的前侧相对于悬臂的固定端图案化尖端,然后使用各向异性蚀刻进行蚀刻。 结果,具有尖尖和短悬臂的探针装置表现出大于700kHz或更高的基本谐振频率。

    Probe device for a metrology instrument and method of fabricating the same
    3.
    发明授权
    Probe device for a metrology instrument and method of fabricating the same 有权
    用于计量仪器的探针装置及其制造方法

    公开(公告)号:US07823216B2

    公开(公告)日:2010-10-26

    申请号:US11833104

    申请日:2007-08-02

    IPC分类号: G01Q70/16

    CPC分类号: G01Q60/38

    摘要: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.

    摘要翻译: 制造诸如AFM的计量仪器的探针装置的方法包括提供具有前表面和后表面的基底,然后在基底的第一表面上形成尖端高度结构阵列,所述结构具有对应于可选尖端的不同深度 高度。 蚀刻衬底的背面,直到衬底的厚度基本上对应于所选择的尖端高度,优选通过视觉监测该蚀刻和/或监测蚀刻速率。 从晶片的前侧相对于悬臂的固定端图案化尖端,然后使用各向异性蚀刻进行蚀刻。 结果,具有尖尖和短悬臂的探针装置表现出大于700kHz或更高的基本谐振频率。

    Fast-Scanning SPM and Method of Operating Same
    4.
    发明申请
    Fast-Scanning SPM and Method of Operating Same 有权
    快速扫描SPM和操作方法相同

    公开(公告)号:US20090032706A1

    公开(公告)日:2009-02-05

    申请号:US11832881

    申请日:2007-08-02

    IPC分类号: G01N23/00

    摘要: A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe of the SPM and a sample to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.

    摘要翻译: 提供一种具有在力控制反馈下快速扫描任意特征的大样本的能力的方法和装置,因此必须获得高分辨率图像。 该方法包括在SPM的探针和样品之间产生相对扫描运动,以至少以30线/秒的速率扫描探针至少4微米的扫描范围,并且控制与力控制回转的探针 - 样品相互作用 速率至少为1毫米/秒。 能够实现这些结果的优选SPM具有力控制器,其具有至少10kHz的至少闭环带宽的力控制带宽。

    SLOT WAVEGUIDE STRUCTURE FOR WAVELENGTH TUNABLE LASER
    5.
    发明申请
    SLOT WAVEGUIDE STRUCTURE FOR WAVELENGTH TUNABLE LASER 审中-公开
    波长波长激光器的波形波形结构

    公开(公告)号:US20130182730A1

    公开(公告)日:2013-07-18

    申请号:US13349523

    申请日:2012-01-12

    申请人: Wenjun Fan Ruolln Li

    发明人: Wenjun Fan Ruolln Li

    IPC分类号: H01S3/10

    摘要: Exemplary embodiments provide a wavelength tunable laser device and methods using the wavelength tunable laser device for a laser tuning. An exemplary wavelength tunable laser device can include an active gain element, a slot waveguide structure, and a wavelength tuning structure including heating elements disposed around the grating structure for a wavelength selection.

    摘要翻译: 示例性实施例提供了波长可调激光器件和使用用于激光调谐的波长可调激光器件的方法。 示例性的波长可调激光器件可以包括有源增益元件,时隙波导结构和包括设置在光栅结构周围的用于波长选择的加热元件的波长调谐结构。

    Plasmonic enhanced infrared detector element
    6.
    发明授权
    Plasmonic enhanced infrared detector element 有权
    等离子增强红外探测元件

    公开(公告)号:US07329871B2

    公开(公告)日:2008-02-12

    申请号:US11346229

    申请日:2006-02-03

    IPC分类号: G01J5/02

    摘要: Electromagnetic radiation detector elements and methods for detecting electromagnetic radiation, in particular, infrared radiation, are provided. The electromagnetic radiation detector element can include an electromagnetic radiation detector and a plasmonic antenna disposed over the electromagnetic radiation detector. The plasmonic antenna can include a metal film, a sub-wavelength aperture in the metal film, and a plurality of circular corrugations centered around the sub-wavelength aperture.

    摘要翻译: 提供了用于检测电磁辐射的电磁辐射探测器元件和方法,特别是红外线辐射。 电磁辐射检测器元件可以包括设置在电磁辐射探测器上的电磁辐射探测器和等离子体激元。 等离子体激元天线可以包括金属膜,金属膜中的亚波长孔,以及以亚波长孔为中心的多个圆形波纹。