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    Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
    1.
    发明授权
    Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) 有权
    在垂直腔面发射激光器（VCSEL）中降低电容并改善高频性能的方法

    公开(公告)号：US07903712B2

    公开(公告)日：2011-03-08

    申请号：US10936218

    申请日：2004-09-07

    申请人： Decai Sun ,  Phil Floyd ,  Wenjun Fan

    发明人： Decai Sun ,  Phil Floyd ,  Wenjun Fan

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18366 ,  G01J3/26 ,  H01S5/2059

    摘要： A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

    摘要翻译： 提供VCSEL结构。 VCSEL结构包括由III-V材料组成的衬底。 该结构还可以包括位于所述衬底上的一个或多个导电层。 在导电层的部分之间可能存在空隙空间以电隔离部分。 还提供了一种用于制造VCSEL结构的方法。

    Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm
    5.
    发明授权
    Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm 有权
    用于改进具有单片集成桥臂的垂直腔面发射激光器（VCSEL）的高频操作的方法

    公开(公告)号：US07756168B2

    公开(公告)日：2010-07-13

    申请号：US10900015

    申请日：2004-07-26

    申请人： Phil Floyd ,  Peter Kner ,  Decai Sun

    发明人： Phil Floyd ,  Peter Kner ,  Decai Sun

    IPC分类号： H01S3/10

    CPC分类号： H01S5/18366 ,  H01S5/0425 ,  H01S5/0607

    摘要： A vertical cavity laser apparatus is provided. In one embodiment, the apparatus includes an electrically responsive substrate; a support block positioned on the electrically responsive substrate; a bridge arm structure coupled to the support block, the structure having a base; a laser active area on the bridge arm structure, a tuning pad on the bridge arm structure, a laser bond pad on the bridge arm structure with traces connecting the laser bond pad to the laser active area and base. The traces are positioned and shaped to be symmetric to avoid problems due to the asymmetry of the injection current. Additionally, in this embodiment, the laser bond pad is kept at a height of the base in order to minimize device capacitance and the traces are also kept at the height of the base. Methods are also provided whereby impedance matching and high speed performance can be accomplished irregardless of the mechanical configuration of the bridge arm structure.

    摘要翻译： 提供了一种垂直腔激光装置。 在一个实施例中，该装置包括电响应基板; 位于所述电响应基板上的支撑块; 耦合到所述支撑块的桥臂结构，所述结构具有基部; 桥臂结构上的激光有源区域，桥臂结构上的调谐板，桥臂结构上的激光键合焊盘，其具有将激光键合焊盘连接到激光器有源区域和基底的迹线。 迹线被定位和成形为对称以避免由于注入电流的不对称性引起的问题。 此外，在本实施例中，激光焊盘保持在基座的高度，以便最小化器件电容，并且迹线也保持在基座的高度。 还提供了可以实现阻抗匹配和高速性能的方法，无论桥臂结构的机械结构如何。

    Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm
    6.
    发明申请
    Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm 有权
    用于改进具有单片集成桥臂的垂直腔面发射激光器（VCSEL）的高频操作的方法

    公开(公告)号：US20080259971A1

    公开(公告)日：2008-10-23

    申请号：US10900015

    申请日：2004-07-26

    申请人： Phil Floyd ,  Peter Kner ,  Decai Sun

    发明人： Phil Floyd ,  Peter Kner ,  Decai Sun

    IPC分类号： H01S3/10 ,  H01S5/00

    CPC分类号： H01S5/18366 ,  H01S5/0425 ,  H01S5/0607

    摘要： A vertical cavity laser apparatus is provided. In one embodiment, the apparatus includes an electrically responsive substrate; a support block positioned on the electrically responsive substrate; a bridge arm structure coupled to the support block, the structure having a base; a laser active area on the bridge arm structure, a tuning pad on the bridge arm structure, a laser bond pad on the bridge arm structure with traces connecting the laser bond pad to the laser active area and base. The traces are positioned and shaped to be symmetric to avoid problems due to the asymmetry of the injection current. Additionally, in this embodiment, the laser bond pad is kept at a height of the base in order to minimize device capacitance and the traces are also kept at the height of the base. Methods are also provided whereby impedance matching and high speed performance can be accomplished irregardless of the mechanical configuration of the bridge arm structure.

    摘要翻译： 提供了一种垂直腔激光装置。 在一个实施例中，该装置包括电响应基板; 位于所述电响应基板上的支撑块; 耦合到所述支撑块的桥臂结构，所述结构具有基部; 桥臂结构上的激光有源区域，桥臂结构上的调谐板，桥臂结构上的激光键合焊盘，其具有将激光键合焊盘连接到激光器有源区域和底座的迹线。 迹线被定位和成形为对称以避免由于注入电流的不对称性引起的问题。 此外，在本实施例中，激光焊盘保持在基座的高度，以便最小化器件电容，并且迹线也保持在基座的高度。 还提供了可以实现阻抗匹配和高速性能的方法，无论桥臂结构的机械结构如何。

    Densely-packed light emitters with layered semiconductor structure and methods of making the light emitters
    8.
    发明授权
    Densely-packed light emitters with layered semiconductor structure and methods of making the light emitters 有权
    具有分层半导体结构的密集发光体和制造发光体的方法

    公开(公告)号：US07120182B2

    公开(公告)日：2006-10-10

    申请号：US10739181

    申请日：2003-12-19

    申请人： Christopher L. Chua ,  Decai Sun

    发明人： Christopher L. Chua ,  Decai Sun

    IPC分类号： H01S5/20 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/34313 ,  H01S5/4031

    摘要： An array of light emitters includes a plurality of light emitting structures formed over a layered structure with at least one quantum well layer. At least one cladding layer is formed on over the at least one quantum well layer. At least one waveguide layer is formed on or over the at least one cladding layer. At least one isolation region is formed at least in between at least two of the plurality of light emitting structures. The at least one isolation region isolates the at least two light emitting structures from each other.

    摘要翻译： 光发射器阵列包括在具有至少一个量子阱层的分层结构上形成的多个发光结构。 在所述至少一个量子阱层上形成至少一个覆层。 至少一个波导层形成在至少一个包层上或上面。 至少在多个发光结构中的至少两个之间形成至少一个隔离区域。 所述至少一个隔离区将所述至少两个发光结构彼此隔离。

    Integration and alignment of VCSEL's with MEMS using micromachining and flip-chip techniques
    9.
    发明授权
    Integration and alignment of VCSEL's with MEMS using micromachining and flip-chip techniques 有权
    VCSEL与MEMS的集成和对准使用微加工和倒装芯片技术

    公开(公告)号：US06647036B1

    公开(公告)日：2003-11-11

    申请号：US09731154

    申请日：2000-12-06

    申请人： Decai Sun ,  Michel A. Rosa

    发明人： Decai Sun ,  Michel A. Rosa

    IPC分类号： H01S304

    CPC分类号： B81C3/002 ,  B81B2201/047 ,  B81C2203/058 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/183 ,  H01S5/423 ,  H05K1/183 ,  H05K3/3442

    摘要： A micro-electromechanical system assembly is designed to integrate a laser. More particularly, laser is a vertical cavity surface-emitting laser. The MEMS assembly includes a micro-electromechanical substrate having an upper surface and a lower surface, the upper surface defined as having a first area and a second area. A first substrate bonding pad is positioned on the upper surface at a location within the first area, and a second substrate bonding pad is positioned on the upper surface at a location within the second area. Deposited upon the first and second substrate bonding areas are respective first and second solder material. A laser to be integrated in the MEMS assembly has a first laser bonding pad located on a first side, and a second laser bonding pad located on a second side. The laser is placed between the first substrate bonding pad and second substrate bonding pad such that they align with the respective first and second laser bonding pads. Upon a reflow of the solder material, a precise alignment of the laser is obtained while the reflow process occurs, and at the same time providing a mechanical and electrical connection between the bonding pads. In a further embodiment, the MEMS substrate is configured with a trench portion into which is placed the laser having the first and second laser bonding pads. Placement in the trench, is at least one of a 45° and 54.74° angle. Upon reflow of solder material on the substrate, the laser is finely positioned and held mechanically stable. In a further embodiment, the trench previously described includes a spring mechanism which carries a substrate bonding pad. The spring mechanism causing the laser within the trench to be maintained in a preferred position during and after the solder reflow process. Still yet another embodiment employs bimetallic cantilevers for positioning the laser and electrical interconnect.

    摘要翻译： 微机电系统组件被设计为集成激光器。 更具体地，激光是垂直腔表面发射激光器。 MEMS组件包括具有上表面和下表面的微机电衬底，所述上表面限定为具有第一区域和第二区域。 第一衬底接合焊盘位于第一区域内的位置的上表面上，第二衬底接合焊盘位于第二区域内的位置的上表面上。 沉积在第一和第二衬底接合区域上的是相应的第一和第二焊料材料。 集成在MEMS组件中的激光器具有位于第一侧的第一激光焊盘和位于第二侧的第二激光焊盘。 激光器被放置在第一衬底焊盘和第二衬底焊盘之间，使得它们与相应的第一和第二激光焊盘对准。 当焊料回流时，在回流过程发生时获得激光的精确对准，并且同时在接合焊盘之间提供机械和电连接。 在另一实施例中，MEMS衬底被配置有沟槽部分，放置有具有第一和第二激光焊盘的激光器。 放置在沟槽中，是45°和54.74°角中的至少一个。 在衬底上焊料材料回流时，激光器被精细地定位并保持机械稳定。 在另一实施例中，先前描述的沟槽包括一个承载衬底接合焊盘的弹簧机构。 在焊料回流过程中和之后使引起沟槽内的激光的弹簧机构保持在优选的位置。 又一实施例采用双金属悬臂来定位激光和电互连。