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    Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
    2.
    发明授权
    Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices 有权
    III-V族氮化物半导体膜和光电子器件的应变工程和杂质控制方法

    公开(公告)号：US06274399B1

    公开(公告)日：2001-08-14

    申请号：US09655752

    申请日：2000-09-06

    申请人： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    发明人： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    IPC分类号： H01L2120

    CPC分类号： H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

    摘要： In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.

    摘要翻译： 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

    Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
    3.
    发明授权
    Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices 失效
    应变设计和杂质控制的III-V氮化物半导体膜和光电子器件

    公开(公告)号：US06194742B1

    公开(公告)日：2001-02-27

    申请号：US09092478

    申请日：1998-06-05

    申请人： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    发明人： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

    摘要： In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGal1-x-yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1-x-yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.

    摘要翻译： 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）的层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

    Method for making a vertical-cavity surface emitting laser with improved current confinement
    6.
    发明授权
    Method for making a vertical-cavity surface emitting laser with improved current confinement 失效
    用于制造具有改进的电流限制的垂直腔表面发射激光器的方法

    公开(公告)号：US06534331B2

    公开(公告)日：2003-03-18

    申请号：US09912803

    申请日：2001-07-24

    申请人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    发明人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    IPC分类号： H01L2100

    CPC分类号： H01S5/18308 ,  H01L33/105 ,  H01L33/145 ,  H01S5/2059

    摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.

    摘要翻译： 可用于构造发光器件的电流限制元件。 电流限制元件包括顶层和孔限定层。 顶层包括对光透明的第一导电类型的顶部半导体材料。 孔径限定层包括孔区域和限制区域。 开口区域包括对光透明的第一导电类型的孔径半导体材料。 限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。 在将剩余的镜面层沉积在孔限定层的顶部之前，通过将元件植入或漫射到一个或多个镜层中来构造光圈限定层。

    Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
    7.
    发明授权
    Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement 有权
    垂直腔表面发射激光器利用反向偏置二极管来改善电流限制

    公开(公告)号：US06680963B2

    公开(公告)日：2004-01-20

    申请号：US09912801

    申请日：2001-07-24

    申请人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    发明人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    IPC分类号： H01S5183

    CPC分类号： H01S5/18308 ,  H01S5/18358 ,  H01S5/2059

    摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.

    摘要翻译： 可用于构造发光器件的电流限制元件。 电流限制元件包括顶层和孔限定层。 顶层包括对光透明的第一导电类型的顶部半导体材料。 孔径限定层包括孔区域和限制区域。 开口区域包括对光透明的第一导电类型的孔径半导体材料。 限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。 在本发明的一个实施例中，限制区域包括第二导电类型的半导体材料。

    Vertical cavity surface emitting laser having improved light output function
    8.
    发明授权
    Vertical cavity surface emitting laser having improved light output function 有权
    垂直腔表面发射激光器具有改善的光输出功能

    公开(公告)号：US06553053B2

    公开(公告)日：2003-04-22

    申请号：US09912611

    申请日：2001-07-25

    申请人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    发明人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    IPC分类号： H01S308

    CPC分类号： H01S5/18333 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/2063 ,  H01S2301/166

    摘要： A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.

    摘要翻译： 一种激光二极管，其包括通过改变激光二极管的多个空间模式来改善光输出 - 电流曲线的导光结构。 根据本发明的激光二极管包括构造在导电材料上的底部反射镜，由位于底部反射镜上方的第一导电间隔件，发光层和位于发光层上方的第二导电间隔件构成的有源区域 。 激光二极管还包括由位于第二导电间隔物上方的由第一导电类型的半导体材料的多个镜层构成的顶镜。 相邻的镜层具有不同的折射率。 改变顶镜面层中的一个或多个以提供孔限定层，其包括改变装置的空间模式的孔径区域。

    Light-emitting diode with an electrically conductive window
    10.
    发明授权
    Light-emitting diode with an electrically conductive window 失效
    具有导电窗的发光二极管

    公开(公告)号：US5008718A

    公开(公告)日：1991-04-16

    申请号：US452800

    申请日：1989-12-18

    申请人： Robert M. Fletcher ,  Chihping Kuo ,  Timothy D. Osentowski ,  Virginia M. Robbins

    发明人： Robert M. Fletcher ,  Chihping Kuo ,  Timothy D. Osentowski ,  Virginia M. Robbins

    IPC分类号： H01L33/00 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01L33/0062

    摘要： A light-emitting diode has a semiconductor substrate underlying active p-n junction layers of AlGaInP for emitting light. A transparent window layer of semiconductor different from AlGaInP overlies the active layers and has a lower electrical resistivity than the active layers and a bandgap greater than the bandgap of the active layers, for minimizing current crowding from a metal electrical contact over the transparent window layer. The active layers may be epitaxially grown on a temporary GaAs substrate. A layer of lattice mismatched GaP is then grown on the active layers with the GaP having a bandgap greater than the bandgap of the active layers so that it is transparent to light emitted by the LED. The GaAs temporary substrate is then selectively etched away so that the GaP acts as a transparent substrate. A transparent window layer may be epitaxially grown over the active layers on the face previously adjacent to the GaAs substrate.