公开(公告)号：US20050207940A1

公开(公告)日：2005-09-22

申请号：US10928650

申请日：2004-08-27

申请人： William Butler ,  Mirianas Chachisvilis ,  Robert Dees ,  Norbert Hagen ,  Philippe Marchand ,  Daniel Raymond ,  Eugene Tu ,  Mark Wang ,  Joon Yang ,  Rong Yang ,  Haichuan Zhang

发明人： William Butler ,  Mirianas Chachisvilis ,  Robert Dees ,  Norbert Hagen ,  Philippe Marchand ,  Daniel Raymond ,  Eugene Tu ,  Mark Wang ,  Joon Yang ,  Rong Yang ,  Haichuan Zhang

IPC分类号： B01L3/00 ,  G01N15/14 ,  G01N21/64 ,  G01N33/53

CPC分类号： G01N15/1459 ,  B01L3/502707 ,  B01L3/502761 ,  B01L3/502776 ,  B01L2200/0636 ,  B01L2200/0647 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0406 ,  B01L2400/0415 ,  B01L2400/0454 ,  B01L2400/0487 ,  G01N2015/149 ,  Y10T436/2575

摘要： Apparatus and Methods are provided for a microfabricated fluorescence activated cell sorter based on an optical switch for rapid, active control of cell routing through a microfluidic channel network. This sorter enables low-stress, highly efficient sorting of populations of small numbers of cells (i.e., 1000-100,000 cells). The invention includes packaging of the microfluidic channel network in a self-contained plastic cartridge that enables microfluidic channel network to macro-scale instrument interconnect, in a sterile, disposable format.

摘要翻译： 为微型荧光激活细胞分选器提供基于光学开关的装置和方法，用于通过微流体通道网络快速，主动地控制细胞路由。 该分选机能够对小数量细胞群体（即1000-100,000个细胞）进行低应激，高效分选。 本发明包括将微流体通道网络包装在独立的塑料盒中，使得微流体通道网络能够以无菌的一次性格式进行大规模的仪器互连。

公开(公告)号：US20060285046A1

公开(公告)日：2006-12-21

申请号：US11300452

申请日：2005-12-15

申请人： Joon Yang ,  Jung Lee ,  Dong Shin

发明人： Joon Yang ,  Jung Lee ,  Dong Shin

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/136231

摘要： A liquid crystal display device is provided. The liquid crystal display device includes a gate line and a data line formed on a substrate; a thin film transistor formed at an intersection of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode substantially parallel to the pixel electrode; and a conductive pattern in contact with the common electrode at a lateral side surface of the common electrode.

摘要翻译： 提供一种液晶显示装置。 液晶显示装置包括形成在基板上的栅极线和数据线; 形成在栅极线和数据线的交点处的薄膜晶体管; 连接到薄膜晶体管的像素电极; 基本上平行于像素电极的公共电极; 以及在公共电极的侧面处与公共电极接触的导电图案。

公开(公告)号：US20050083461A1

公开(公告)日：2005-04-21

申请号：US10880098

申请日：2004-06-30

申请人： Joon Yang ,  Yong Park ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Kim

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/133555 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136231

摘要： A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

摘要翻译： 半透射型液晶显示装置包括在基板上彼此交叉以形成多个像素区域的多个栅极和数据线，栅极和数据线的每个交叉处的薄膜晶体管，所述薄膜晶体管包括 半导体层以及源极和漏极电极分别与源极和漏极区域接触的像素区域内的投影种子图案沿着与薄膜晶体管的半导体层相同的层，以及与薄膜的漏电极接触的反射电极 并且具有对应于投影种子图案的反射投影。

公开(公告)号：US20050134752A1

公开(公告)日：2005-06-23

申请号：US10878023

申请日：2004-06-29

申请人： Joon Yang ,  Yong Park ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Kim

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1339 ,  G02F1/1362

CPC分类号： G02F1/136213 ,  G02F1/136277 ,  G02F1/136286 ,  G02F2001/136231

摘要： An LCD device and a fabrication method having a reduced number of masks and simplified fabrication processes. The method includes providing a substrate, forming an active pattern on the substrate, forming a first insulating layer on the substrate, forming a gate electrode and a pixel electrode on the substrate, forming a second insulating layer provided with a contract hole on the substrate, and forming source and drain electrodes respectively connected to a source region and a drain region through the contact hole.

摘要翻译： 一种具有减少数量的掩模和简化制造工艺的LCD装置和制造方法。 该方法包括提供衬底，在衬底上形成有源图案，在衬底上形成第一绝缘层，在衬底上形成栅电极和像素电极，在衬底上形成设置有收缩孔的第二绝缘层， 以及通过所述接触孔形成分别连接到源极区域和漏极区域的源极和漏极。

公开(公告)号：US20060023133A1

公开(公告)日：2006-02-02

申请号：US11172076

申请日：2005-06-29

申请人： Joon Yang

发明人： Joon Yang

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  G02F2001/136231

摘要： A fabrication method of an LCD includes providing a substrate having a first region and a second region; forming a storage line in the first region and an active pattern in the second region of the substrate; forming a first insulation film on the substrate; forming a gate electrode and a pixel electrode on the substrate; forming a second insulation film on the substrate; and forming a source electrode and a drain electrode, the source electrode connected to a source region via a contact hole and the drain electrode connected to a drain region through the contact hole. The fabrication method may obtain a sufficient storage capacitance with a simplified process. The number of masks used for fabrication of a thin film transistor (TFT) may be reduced.

摘要翻译： LCD的制造方法包括提供具有第一区域和第二区域的基板; 在所述第一区域中形成存储线和在所述衬底的所述第二区域中形成有源图案; 在基板上形成第一绝缘膜; 在基板上形成栅电极和像素电极; 在所述基板上形成第二绝缘膜; 并且形成源电极和漏电极，所述源极经由接触孔与源极区域连接，所述漏电极通过所述接触孔与漏极区域连接。 制造方法可以通过简化的工艺获得足够的存储电容。 用于制造薄膜晶体管（TFT）的掩模的数量可以减少。

公开(公告)号：US20050140869A1

公开(公告)日：2005-06-30

申请号：US10965931

申请日：2004-10-18

申请人： Joon Yang ,  Yong Park ,  Sang Jang ,  Su Choi ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Jang ,  Su Choi ,  Sang Kim

IPC分类号： G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/133555 ,  G02F1/136213 ,  G02F2001/136231 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/78621

摘要： A CMOS-TFT array substrate and a method for fabricating the same is disclosed, by a low-mask technology to decrease the usage count of masks, which includes a substrate comprising an active area having a plurality of pixel regions and a driving circuit area for driving the active area, each pixel region having a transmitting part and a reflective part; a first semiconductor layer having first source/drain regions formed in the pixel region; a second semiconductor layer having second source/drain regions formed in the driving circuit area; a gate insulating layer on an entire surface of the substrate including the first and second semiconductor layers; first and second gate electrodes on the gate insulating layer above the first and second semiconductor layers; a storage electrode in the pixel region; an insulating interlayer on the entire surface of the substrate; a transmitting electrode on the insulating interlayer of the transmitting part; a passivation layer on the entire surface of the substrate including the transmitting electrode; a reflective electrode on the passivation layer of the reflective part; first and second source/drain electrodes being in contact with the first and second source/drain regions; and a liquid crystal layer between the substrate and another facing substrate.

摘要翻译： 公开了一种通过低掩模技术降低掩模的使用次数的CMOS-TFT阵列基板及其制造方法，该掩模技术包括：基板，其包括具有多个像素区域的有源区域和用于 驱动有源区域，每个像素区域具有透射部分和反射部分; 在所述像素区域中形成有第一源极/漏极区域的第一半导体层; 具有形成在所述驱动电路区域中的第二源/漏区的第二半导体层; 在包括第一和第二半导体层的基板的整个表面上的栅极绝缘层; 在第一和第二半导体层上方的栅极绝缘层上的第一和第二栅电极; 像素区域中的存储电极; 在基板的整个表面上的绝缘中间层; 在所述发射部分的绝缘中间层上的发射电极; 在包括发射电极的基板的整个表面上的钝化层; 在反射部分的钝化层上的反射电极; 第一和第二源极/漏极与第一和第二源极/漏极区域接触; 以及在所述基板和另一面对基板之间的液晶层。

公开(公告)号：US20050134756A1

公开(公告)日：2005-06-23

申请号：US10878363

申请日：2004-06-29

申请人： Joon Yang ,  Yong Park ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Kim

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/136227 ,  G02F1/1368

摘要： A method of fabricating a liquid crystal display device includes forming an active pattern on a substrate, forming a first insulating layer on the substrate over the active pattern, forming a gate line including a gate electrode and a data line on the substrate, the data line including a plurality of segmented portions electrically disconnected from each other, forming source and drain regions in the active pattern, forming a second insulating layer on the first insulating layer, the gate line, and the data line, simultaneously forming a pair of first contact holes through the first and second insulating layers, a second contact hole through the second insulating layer, and a pair of third contact holes through the second insulating layer, forming a conductive material along an entire surface of the substrate, and patterning the conductive material to form a drain electrode, a first connection line, and a second connection line on the second insulating layer.

摘要翻译： 制造液晶显示装置的方法包括在基板上形成有源图案，在有源图案上在基板上形成第一绝缘层，在基板上形成包括栅电极和数据线的栅极线，数据线 包括彼此电断开的多个分段部分，在有源图案中形成源区和漏区，在第一绝缘层，栅线和数据线上形成第二绝缘层，同时形成一对第一接触孔 通过第一和第二绝缘层，穿过第二绝缘层的第二接触孔和穿过第二绝缘层的一对第三接触孔，沿着衬底的整个表面形成导电材料，并且使导电材料形成图形 漏电极，第一连接线和第二连接线。

公开(公告)号：US20050101067A1

公开(公告)日：2005-05-12

申请号：US11004064

申请日：2004-12-06

申请人： Joon Yang

发明人： Joon Yang

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/0392

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/78621

摘要： A method of fabricating a CMOS thin film transistor. First and second active layers are formed at first and second transistor areas of a transparent substrate. A gate insulating film is formed at middle portions of the first and second active layers while the sides of each are exposed. Each exposed side is ion-doped with a first conductive impurity at a first energy and at a first concentration using the first and second gate electrodes as mask, thus forming first and second high-concentrated areas. A photoresist pattern that covers the first transistor area is formed on the transparent substrate. The second high-concentrated impurity area is ion-doped with a second conductive impurity, at a second energy that is greater than the first energy and at a second concentration that is greater than the first concentration, to form a third high-concentrated impurity area that is counter-doped.

公开(公告)号：US20070058116A1

公开(公告)日：2007-03-15

申请号：US11372081

申请日：2006-03-10

申请人： Jung Lee ,  Joon Yang

发明人： Jung Lee ,  Joon Yang

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/13439 ,  G02F2001/136231 ,  G02F2201/123 ,  G02F2203/02

摘要： An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.

摘要翻译： 一种半透射型液晶显示装置的阵列基板，包括：基板; 栅极线和数据线，栅极线和数据线彼此交叉以限定包括透射区域和围绕透射区域的反射区域的像素区域; 具有栅极绝缘层的薄膜晶体管，所述薄膜晶体管电连接到所述栅极线和所述数据线; 具有暴露所述薄膜晶体管的漏电极的漏极接触孔和在所述透射区域中暴露所述衬底的通孔的第一钝化层; 所述第一钝化层上的像素电极，所述像素电极通过所述通孔与所述透射区域中的所述基板接触; 以及像素电极上的反射板，反射板通过漏极接触孔和像素电极与漏电极电连接。

公开(公告)号：US20070013841A1

公开(公告)日：2007-01-18

申请号：US11524433

申请日：2006-09-21

申请人： Joon Yang ,  Yong Park ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Kim

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136231

摘要： A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.