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    Production of biodiesel and other valuable chemicals from wastewater treatment plant sludges
    2.
    发明申请
    Production of biodiesel and other valuable chemicals from wastewater treatment plant sludges 有权
    从废水处理厂污泥生产生物柴油和其他有价值的化学品

    公开(公告)号：US20050112735A1

    公开(公告)日：2005-05-26

    申请号：US10956069

    申请日：2004-10-04

    申请人： Mark Zappi ,  William French ,  Rafael Hernandez ,  Stephen Dufreche ,  Darrell Sparks

    发明人： Mark Zappi ,  William French ,  Rafael Hernandez ,  Stephen Dufreche ,  Darrell Sparks

    IPC分类号： C02F1/26 ,  C02F1/72 ,  C02F1/78 ,  C02F11/04 ,  C02F11/12 ,  C10L20060101 ,  C10L1/18 ,  C12P7/64

    CPC分类号： C02F11/12 ,  C02F1/26 ,  C02F1/722 ,  C02F1/78 ,  C02F11/04 ,  C02F2305/026 ,  C10G2300/1011 ,  C10L1/026 ,  Y02E50/13 ,  Y02E50/32 ,  Y02E50/343 ,  Y02P30/20 ,  Y02W10/40 ,  Y02W30/47

    摘要： A process for producing biodiesel has been invented by first extracting lipids from the sludges generated during primary and/or biological treatment of municipal, agricultural, and industrial wastewaters using primary, secondary, and tertiary treatments followed by the transesterification of the extracted lipids using transesterification conversion into alcohol-based esters. The resulting products from this process include biodiesel, glycerol, lipid-free proteins, various other useful chemicals and an aqueous-based substrate well suited for optimized digestion within subsequent biological digestion (either aerobic or anaerobic). The lipids extracted from the sludges containing high levels of microorganisms are phospholipids which can also be directly used as lecithin. The extraction of the lipids from the sludges will be performed using chemical extraction techniques with the transesterification of the extracted lipids accomplished using basic, acidic, and/or a combination of the two transesterification techniques.

    摘要翻译： 已经发明了生产生物柴油的方法，首先从使用一级，二级和三级处理的市政，农业和工业废水的初级和/或生物处理期间产生的污泥提取脂质，然后使用酯交换转化进行所提取的脂质的酯交换 成为醇基酯。 从该方法得到的产物包括生物柴油，甘油，无脂质的蛋白质，各种其他有用的化学物质和适合在随后的生物消化（有氧或厌氧）中优化消化）的水性基质。 从含有高水平微生物的污泥提取的脂质是磷脂，其也可以直接用作卵磷脂。 将使用化学提取技术进行脂质从淤泥中的提取，其中使用碱性，酸性和/或两种酯交换技术的组合完成所提取的脂质的酯交换。

    Method of forming high lateral voltage isolation structure involving two separate trench fills
    3.
    发明授权
    Method of forming high lateral voltage isolation structure involving two separate trench fills 有权
    形成高横向电压隔离结构的方法，涉及两个单独的沟槽填充

    公开(公告)号：US08815700B2

    公开(公告)日：2014-08-26

    申请号：US12315934

    申请日：2008-12-08

    申请人： Peter J. Hopper ,  William French ,  Kyuwoon Hwang

    发明人： Peter J. Hopper ,  William French ,  Kyuwoon Hwang

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76283

    摘要： In a SOI process, a high lateral voltage isolation structure is formed by providing at least two concentric dielectric filled trenches, removing the semiconductor material between the dielectric filled trenches and filling the resultant gap with dielectric material to define a single wide dielectric filled trench.

    摘要翻译： 在SOI工艺中，通过提供至少两个同心的电介质填充的沟槽来形成高横向电压隔离结构，去除介电填充的沟槽之间的半导体材料，并用电介质材料填充所得的间隙以限定单个宽的电介质填充的沟槽。

    THERMALLY CONDUCTIVE SUBSTRATE FOR GALVANIC ISOLATION
    6.
    发明申请
    THERMALLY CONDUCTIVE SUBSTRATE FOR GALVANIC ISOLATION 有权
    用于血液分离的导热基质

    公开(公告)号：US20130001735A1

    公开(公告)日：2013-01-03

    申请号：US13170451

    申请日：2011-06-28

    申请人： Peter J. Hopper ,  William French ,  Ann Gabrys

    发明人： Peter J. Hopper ,  William French ,  Ann Gabrys

    IPC分类号： H01L29/02 ,  H01L21/50

    CPC分类号： H01L23/3732 ,  H01L23/147 ,  H01L23/49894 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2924/10253 ,  H01L2924/19107 ,  H01L2924/00

    摘要： A galvanic isolation integrated circuit system includes a semiconductor substrate; a layer of thermally conductive material, e.g., CVD nano- or poly-diamond thin film or boron nitride CVD thin film, formed over the semiconductor substrate; a first integrated circuit structure formed over the layer of thermally conductive material; a second integrated circuit structure formed over the layer of thermally conductive material, the second integrated circuit structure being spaced apart from the first integrated circuit structure; and a galvanic isolation structure formed over the layer of thermally conductive material between the first and second integrated circuit structures and connected to the first integrated circuit structure and the second integrated circuit structure.

    摘要翻译： 电隔离集成电路系统包括半导体衬底; 形成在半导体衬底上的导热材料层，例如CVD纳米或多晶金刚石薄膜或氮化硼CVD薄膜; 形成在导热材料层上的第一集成电路结构; 形成在所述导热材料层上的第二集成电路结构，所述第二集成电路结构与所述第一集成电路结构间隔开; 以及在第一和第二集成电路结构之间形成在导热材料层上并连接到第一集成电路结构和第二集成电路结构的电流隔离结构。

    METHOD AND STRUCTURE FOR IMPROVING THE QUALILTY FACTOR OF RF INDUCTORS
    8.
    发明申请
    METHOD AND STRUCTURE FOR IMPROVING THE QUALILTY FACTOR OF RF INDUCTORS 审中-公开
    改进射频电感器质量因子的方法和结构

    公开(公告)号：US20110272780A1

    公开(公告)日：2011-11-10

    申请号：US12774532

    申请日：2010-05-05

    申请人： Peter Smeys ,  Kyuwoon Hwang ,  Peter J. Hopper ,  William French

    发明人： Peter Smeys ,  Kyuwoon Hwang ,  Peter J. Hopper ,  William French

    IPC分类号： H01L29/86 ,  H01L21/02

    CPC分类号： H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An on-chip inductor structure is formed as part of an integrated circuit structure. The integrate circuit structure includes a semiconductor substrate having a top side and a back side, integrated circuit elements formed on the top side of the substrate, a conductive interconnect structure formed in contact with the integrated circuit elements and a passivation layer formed over the integrated circuit elements. The inductor structure comprises a layer of photoimageable epoxy formed on the passivation layer, a conductive inductor coil formed on the layer of photoimageable epoxy and at least one conductive via that extends from the inductor coil to the interconnect layer to provide electrical connection therebetween. Additionally, a back side trench may be formed in the back side of the semiconductor substrate beneath the inductor coil.

    摘要翻译： 片上电感器结构形成为集成电路结构的一部分。 集成电路结构包括具有顶侧和背面的半导体衬底，形成在衬底的顶侧上的集成电路元件，与集成电路元件接触形成的导电互连结构和形成在集成电路上的钝化层 元素。 电感器结构包括形成在钝化层上的可光成像环氧树脂层，形成在可光成像环氧树脂层上的导电电感线圈和从电感线圈延伸到互连层的至少一个导电通孔，以在它们之间提供电连接。 此外，可以在电感线圈下方的半导体衬底的背面形成背面沟槽。

    METHOD OF FORMING A REGION OF GRADED DOPING CONCENTRATION IN A SEMICONDUCTOR DEVICE AND RELATED APPARATUS
    9.
    发明申请
    METHOD OF FORMING A REGION OF GRADED DOPING CONCENTRATION IN A SEMICONDUCTOR DEVICE AND RELATED APPARATUS 有权
    形成半导体器件中的分级掺杂浓度区域的方法及相关装置

    公开(公告)号：US20110233670A1

    公开(公告)日：2011-09-29

    申请号：US13156184

    申请日：2011-06-08

    申请人： William French ,  Erika Mazotti ,  Yuri Mirgorodski

    发明人： William French ,  Erika Mazotti ,  Yuri Mirgorodski

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0847 ,  H01L21/2253 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

    摘要： A method for forming a doped region of a semiconductor device includes masking a portion of a substrate with a mask. The mask is configured to create a graded doping profile within the doped region. The method also includes performing an implant using the mask to create doped areas and undoped areas in the substrate. The method further includes diffusing the doped areas to create the graded doping profile in the doped region. The mask could include a first region having openings distributed throughout a photo-resist material, where the openings vary in size and spacing. The mask could also include a second region having blocks of photo-resist material distributed throughout an open region, where the photo-resist blocks vary in size and spacing. Diffusing the doped areas could include applying a high temperature anneal to smooth the doped and undoped areas to produce a linearly graded doping profile.

    摘要翻译： 用于形成半导体器件的掺杂区域的方法包括用掩模掩蔽衬底的一部分。 掩模被配置为在掺杂区域内产生渐变掺杂分布。 该方法还包括使用掩模执行植入物以在衬底中产生掺杂区域和未掺杂区域。 该方法还包括扩散掺杂区域以在掺杂区域中产生渐变掺杂分布。 掩模可以包括具有分布在整个光致抗蚀剂材料中的开口的第一区域，其中开口的尺寸和间隔变化。 掩模还可以包括具有分布在整个开放区域中的光致抗蚀剂材料块的第二区域，其中光刻胶块的尺寸和间距变化。 扩散掺杂区域可以包括施加高温退火以使掺杂和未掺杂区域平滑以产生线性渐变的掺杂分布。