公开(公告)号：US20160368773A1

公开(公告)日：2016-12-22

申请号：US15184036

申请日：2016-06-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Michael Scott Arnold ,  Padma Gopalan ,  Nathaniel S. Safron ,  Myungwoong Kim

IPC: C01B31/04

CPC classification number: C01B32/182 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194 ,  C01B2204/32 ,  Y10S977/734 ,  Y10S977/843 ,  Y10S977/932 ,  Y10T428/24802

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

公开(公告)号：US09105480B2

公开(公告)日：2015-08-11

申请号：US13829078

申请日：2013-03-14

Applicant: Wisconsin Alumni Research Foundation

Inventor： Michael S. Arnold ,  Padma Gopalan ,  Nathaniel S. Safron ,  Myungwoong Kim ,  Jonathan Woosun Choi

IPC: C01B31/04 ,  H01L21/04 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  B82Y10/00

CPC classification number: H01L21/042 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/194 ,  C01B2204/065 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/66439 ,  H01L29/778

Abstract: Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.

Abstract translation: 提供了使用由自组装嵌段共聚物膜形成的蚀刻掩模来制造包括图案化石墨烯衬底的图案化衬底的方法。 该方法的一些实施方案基于嵌段共聚物（BCP）平版印刷术与组合蛋白质外延法。 该方法的一些实施方案基于利用衍生自BCP模板的混合有机/无机蚀刻掩模的BCP光刻技术。 还提供了结合了石墨烯纳米线阵列作为导电沟道的场效应晶体管以及用于制造这种晶体管的方法。

公开(公告)号：US20140273361A1

公开(公告)日：2014-09-18

申请号：US13829078

申请日：2013-03-14

Applicant: Wisconsin Alumni Research Foundation

Inventor： Michael S. Arnold ,  Padma Gopalan ,  Nathaniel S. Safron ,  Myungwoong Kim ,  Jonathan Woosun Choi

IPC: H01L21/04 ,  H01L21/027 ,  C01B31/04 ,  H01L21/02

CPC classification number: H01L21/042 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/194 ,  C01B2204/065 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/66439 ,  H01L29/778

Abstract: Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.

Abstract translation: 提供了使用由自组装嵌段共聚物膜形成的蚀刻掩模来制造包括图案化石墨烯衬底的图案化衬底的方法。 该方法的一些实施方案基于嵌段共聚物（BCP）平版印刷术与组合蛋白质外延法。 该方法的一些实施方案基于利用衍生自BCP模板的混合有机/无机蚀刻掩模的BCP光刻技术。 还提供了结合了石墨烯纳米线阵列作为导电沟道的场效应晶体管以及用于制造这种晶体管的方法。

公开(公告)号：US10252914B2

公开(公告)日：2019-04-09

申请号：US15184036

申请日：2016-06-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Michael Scott Arnold ,  Padma Gopalan ,  Nathaniel S. Safron ,  Myungwoong Kim

IPC: C01B32/182 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.