公开(公告)号：US08728871B2

公开(公告)日：2014-05-20

申请号：US13673656

申请日：2012-11-09

Applicant: Xintec Inc.

Inventor： Wei-Ming Chen ,  Shu-Ming Chang

IPC: H01L21/00

CPC classification number: H01L23/49811 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24246 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/83

Abstract: A chip package is disclosed. The package includes a carrier substrate, at least two semiconductor chips, a fill material layer, a protective layer, and a plurality of conductive bumps. The carrier substrate includes a grounding region. The semiconductor chips are disposed overlying the grounding region of the carrier substrate. Each semiconductor chip includes at least one signal pad and includes at least one grounding pad electrically connected to the grounding region. The fill material layer is formed overlying the carrier substrate and covers the semiconductor chips. The protective layer covers the fill material layer. The plurality of conductive bumps is disposed overlying the protective layer and is electrically connected to the semiconductor chips. A fabrication method of the chip package is also disclosed.

Abstract translation: 公开了一种芯片封装。 封装包括载体衬底，至少两个半导体芯片，填充材料层，保护层和多个导电凸块。 载体基板包括接地区域。 半导体芯片设置在载体基板的接地区域上。 每个半导体芯片包括至少一个信号焊盘，并且包括电连接到接地区域的至少一个接地焊盘。 填充材料层形成在载体衬底上并覆盖半导体芯片。 保护层覆盖填充层。 多个导电凸块设置在保护层的上方并与半导体芯片电连接。 还公开了芯片封装的制造方法。

公开(公告)号：US08766431B2

公开(公告)日：2014-07-01

申请号：US13828537

申请日：2013-03-14

Applicant: Xintec Inc.

Inventor： Baw-Ching Perng ,  Ying-Nan Wen ,  Shu-Ming Chang ,  Ching-Yu Ni ,  Yun-Ji Hsieh ,  Wei-Ming Chen ,  Chia-Lun Tsai ,  Chia-Ming Cheng

IPC: H01L23/04

CPC classification number: H01L29/78 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/492 ,  H01L24/13 ,  H01L24/16 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7802 ,  H01L29/7809 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/13091 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals.

Abstract translation: 功率MOSFET封装包括具有相反的第一和第二表面的半导体衬底，具有第一导电类型，并形成漏极区，从第一表面向下延伸并具有第二导电类型的掺杂区，掺杂区中的源极区 并且具有第一导电类型，覆盖或掩埋在第一表面下方的栅极，其中栅极电介质层位于栅极和半导体衬底之间，覆盖半导体衬底的第一导电结构，具有第一端子，并且电连接漏极 区域，覆盖半导体衬底的第二导电结构，具有第二端子，并且电连接源极区域，覆盖半导体衬底的第三导电结构，具有第三端子和电连接栅极，其中第一，第二， 并且第三端子基本上共面，并且第三端子之间的保护层 e半导体衬底和端子。

公开(公告)号：US08860217B1

公开(公告)日：2014-10-14

申请号：US14298436

申请日：2014-06-06

Applicant: Xintec Inc.

Inventor： Wei-Ming Chen ,  Shu-Ming Chang

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/49811 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24246 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/83

Abstract: A chip package is disclosed. The package includes a carrier substrate, at least two semiconductor chips, a fill material layer, a protective layer, and a plurality of conductive bumps. The carrier substrate includes a grounding region. The semiconductor chips are disposed overlying the grounding region of the carrier substrate. Each semiconductor chip includes at least one signal pad and includes at least one grounding pad electrically connected to the grounding region. The fill material layer is formed overlying the carrier substrate and covers the semiconductor chips. The protective layer covers the fill material layer. The plurality of conductive bumps is disposed overlying the protective layer and is electrically connected to the semiconductor chips. A fabrication method of the chip package is also disclosed.

Abstract translation: 公开了一种芯片封装。 封装包括载体衬底，至少两个半导体芯片，填充材料层，保护层和多个导电凸块。 载体基板包括接地区域。 半导体芯片设置在载体基板的接地区域上。 每个半导体芯片包括至少一个信号焊盘，并且包括电连接到接地区域的至少一个接地焊盘。 填充材料层形成在载体衬底上并覆盖半导体芯片。 保护层覆盖填充层。 多个导电凸块设置在保护层的上方并与半导体芯片电连接。 还公开了芯片封装的制造方法。

公开(公告)号：US08772932B2

公开(公告)日：2014-07-08

申请号：US13673672

申请日：2012-11-09

Applicant: Xintec Inc.

Inventor： Wei-Ming Chen ,  Shu-Ming Chang

IPC: H01L23/48

CPC classification number: H01L23/49811 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24246 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/83

Abstract: A chip package is disclosed. The package includes a carrier substrate, at least two semiconductor chips, a fill material layer, a protective layer, and a plurality of conductive bumps. The carrier substrate includes a grounding region. The semiconductor chips are disposed overlying the grounding region of the carrier substrate. Each semiconductor chip includes at least one signal pad and includes at least one grounding pad electrically connected to the grounding region. The fill material layer is formed overlying the carrier substrate and covers the semiconductor chips. The protective layer covers the fill material layer. The plurality of conductive bumps is disposed overlying the protective layer and is electrically connected to the semiconductor chips. A fabrication method of the chip package is also disclosed.