摘要:
This invention relates to a filling grease composition for automobile wire harness connector which comprises a petroleum oil having an initial boiling point of 400.degree. C. or more and a gelling agent having the general formula: ##STR1## wherein R is a divalent aromatic group represented by a member: ##STR2## as essential components, and the content of said gelling agent ranging from 5 to 50% by weight on the basis of the whole composition.
摘要:
Thermoplastic polyester compositions comprising at least two groups of polybutylene terephthalate with substantially different intrinsic viscosity values and conventional additives for molding having an improved thermal flow capability under molding conditions expressed in such indices as heat flow (m cal/sec), enthalphy change .DELTA.Hm(Joule/gr) at the solidification of fused polymer, crystalline fraction (Xc), and the time of growth to (sec) of the primary nuclei of embryonic crystalline. The polymer compositions of the present invention result in a larger size of crystalline than the case of independent, single polymer and this enables to carry out injection moulding at about 20 degrees lower cylinder temperature than usual molding practice without sacrificing mechanical and thermal properties of the product.
摘要:
A parallel p-n layer (20) is provided as a drift layer between an active portion and an n+ drain region (11). The parallel p-n layer (20) is formed by an n-type region (1) and a p-type region (2) being repeatedly alternately joined. An n-type high concentration region (21) is provided on a first main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration higher than that of an n-type low concentration region (22) provided on a second main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration 1.2 times or more, 3 times or less, preferably 1.5 times or more, 2.5 times or less, greater than that of the n-type low concentration region (22). Also, the n-type high concentration region (21) has one-third or less, preferably one-eighth or more, one-fourth or less, of the thickness of a region of the n-type region (1) adjacent to the p-type region (2).
摘要:
A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a mask to form a second drain region, which also serves as a drift region.
摘要:
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternating conductivity type layer formed of n drift current path regions and p partition regions arranged alternately with each other, and a breakdown withstanding region with a second alternating conductivity type layer formed of n regions and p regions arranged alternately with each other, the breakdown withstanding region providing no current path in the ON-state of the device and being depleted in the OFF-state of the device. Since depletion layers expand in both directions from multiple pn-junctions into n regions and p regions in the OFF-state of the device, the adjacent areas of p-type base regions, the outer area of the semiconductor chip and the deep area of the semiconductor chip are depleted. Thus, the breakdown voltage of breakdown withstanding region is higher than the breakdown voltage of drain drift region.
摘要:
A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an active region including a thin first alternating conductivity type layer and a heavily doped n+-type intermediate drain layer between first alternating conductivity type layer and an n++-type drain layer, and a breakdown withstanding region including a thick second alternating conductivity type layer. Alternatively, active region includes a first alternating conductivity type layer and a third alternating conductivity type layer between first alternating conductivity type layer and n++-type drain layer, third alternating conductivity type layer being doped more heavily than first alternating conductivity type layer.
摘要:
A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. The super-junction semiconductor device includes a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface; a layer with low electrical resistance on the side of the second major surface; a first alternating conductivity type layer on low resistance layer, and a second alternating conductivity type layer on the first alternating conductivity type layer. The first alternating conductivity type layer including regions of a first conductivity type and regions of a second conductivity type arranged alternately with each other. The second alternating conductivity type layer including regions of the first conductivity type and regions of the second conductivity type arranged alternately with each other. The spacing between the pn-junctions in the second alternating conductivity type layer is wider than the spacing between the pn-junctions in the first alternating conductivity type layer.
摘要:
The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-type partition region repeating at a first repeating pitch, and trenches each containing a gate electrode buried therein, the trenches being arranged repeatedly at a second repeating pitch wider than the first repeating pitch. The device further includes one or more n-type channel regions between a p-type partition regions and a p-type well region.
摘要:
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base regions, a second n-channel MOSFET including base regions, and an alternating conductivity type layer formed of drift region and partition regions arranged alternately. Partition regions are isolated from base regions by a high resistivity region and from base regions by a high resistivity region to maintaining a high breakdown voltage between first MOSFET and the second MOSFET. By connecting high resistivity regions and via drift regions to each other, a current is made flow from the first MOSFET to the second MOSFET and vice versa and the on-voltage is reduced.
摘要:
A card type fuse aimed at reducing production costs and improving a forming precision of an exothermic fusing portion 2a. The card type fuse comprises an insulation substratum 1, fuse circuits 2 arranged on the insulation substratum 1 and having a narrow exothermic fusing portion 2a, and a cover layer 3 covering fuse circuits 2. The cover layer 3 is made of a heat resisting film. The fuse circuits 2 are printed on the heat resisting film by means of a conductive paste. The insulation substratum 1 is made of a heat resisting thermoplastic resin suitable for an SMT. The insulation substratum 1 is integrally formed on the side having the fuse circuits on the heat resisting film.