利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

111 条记录 (耗时 0.051 秒)

    LITHIUM ION SECONDARY BATTERY
    3.
    发明申请
    LITHIUM ION SECONDARY BATTERY 有权
    锂离子二次电池

    公开(公告)号：US20150155563A1

    公开(公告)日：2015-06-04

    申请号：US14404350

    申请日：2012-05-31

    申请人： Tomio Iwasaki

    发明人： Tomio Iwasaki

    IPC分类号： H01M4/62 ,  H01M10/0525 ,  H01M4/505 ,  H01M4/485 ,  H01M4/525

    CPC分类号： H01M4/622 ,  H01M4/131 ,  H01M4/133 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/62 ,  H01M10/0525 ,  H01M2220/30

    摘要： A lithium ion secondary battery includes a binder that binds an active material to a current collector in the positive electrode or negative electrodes or both. The binder contains a base material including a resin having a benzene ring, and a polyacene additive selected from the group consisting of naphthalene, anthracene, tetracene, and derivatives thereof. The active material is a carbonaceous material or a lithium-containing composite oxide having a crystal structure in which a distance between nearest oxygen atoms is 0.19 to 0.29 nm. Adhesion of the binder to the active material during the manufacturing of the lithium ion secondary battery is led to a closest-packed crystal plane in the crystal structure of the active material, so that inhibition of moving of lithium ions in and out of the active material due to the binder may be reduced.

    摘要翻译： 锂离子二次电池包括将活性物质与正极或负极中的集电体结合的粘合剂或两者。 粘合剂含有包含具有苯环的树脂的基材和选自萘，蒽，并四苯及其衍生物的多并苯添加剂。 活性物质是具有晶体结构的碳质材料或含锂复合氧化物，其中最近的氧原子之间的距离为0.19〜0.29nm。 在制造锂离子二次电池期间，粘合剂对活性物质的粘附性导致活性物质的晶体结构中最接近填充的晶面，从而抑制锂离子进出活性物质的移动 由于粘合剂可能会减少。

    Magnetic disk for hard disk drives
    5.
    发明授权
    Magnetic disk for hard disk drives 有权
    用于硬盘驱动器的磁盘

    公开(公告)号：US07846567B2

    公开(公告)日：2010-12-07

    申请号：US12127856

    申请日：2008-05-28

    申请人： Yasutaka Okura ,  Tomio Iwasaki

    发明人： Yasutaka Okura ,  Tomio Iwasaki

    IPC分类号： G11B5/70

    CPC分类号： G11B5/855

    摘要： The present invention provides a magnetic disk in a discrete track medium and a patterned medium, which prevents the loss of the magnetically recorded data when a head of a magnetic disk device contacts the magnetic disk, and a manufacturing method thereof. A magnetic disk has a protrusion as a non-magnetic member formed on a disk surface to prevent a head from being in contact with a recording section. When the protrusion formed in a disk substrate collides against the head, the protrusion 7 does not collapse, and accordingly, the recording layer is not damaged. Alternatively, concave and convex portions are formed on the substrate surface to use the convex portion as the protrusion.

    摘要翻译： 本发明提供了一种分立轨道介质中的磁盘和图案化介质，其防止当磁盘装置的磁头与磁盘接触时磁记录数据的损失及其制造方法。 磁盘具有作为形成在盘表面上的非磁性构件的突起，以防止头部与记录部分接触。 当形成在盘基板上的突起与头部碰撞时，突起7不会折叠，因此记录层不被损坏。 或者，在基板表面上形成凹凸部，使用凸部作为突出部。

    Patterned magnetic medium, magnetic recording medium and magnetic storage device
    6.
    发明授权
    Patterned magnetic medium, magnetic recording medium and magnetic storage device 有权
    图案磁介质，磁记录介质和磁存储装置

    公开(公告)号：US07771853B2

    公开(公告)日：2010-08-10

    申请号：US11956424

    申请日：2007-12-14

    申请人： Tomio Iwasaki

    发明人： Tomio Iwasaki

    IPC分类号： G11B5/66

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/72 ,  G11B5/743 ,  G11B5/855

    摘要： A patterned magnetic medium includes: a substrate; a soft magnetic underlying film, a nonmagnetic film, an intermediate film and a recording layer which are formed on a principal surface of the substrate; a first protective film formed in contact with the recording film; a second protective film formed in contact with the first protective film; and a third protective film formed in contact with the second protective film. Moreover, the recording layer has a pattern structure formed by making a magnetic film come into contact with a concavo-convex pattern of a nonmagnetic material. The first protective film and the third protective film include carbon as the main constituent element and the second protective film is a wet-coated polymer film. High adhesion between carbon and the wet-coated polymer film can prevent peeling off and the wet-coated polymer film as a cushioning material absorbs impact.

    摘要翻译： 图案化磁介质包括：基板; 形成在基板的主表面上的软磁性底膜，非磁性膜，中间膜和记录层; 形成为与记录膜接触的第一保护膜; 形成为与第一保护膜接触的第二保护膜; 和与第二保护膜接触形成的第三保护膜。 此外，记录层具有通过使磁性膜与非磁性材料的凹凸图案接触而形成的图案结构。 第一保护膜和第三保护膜包括碳作为主要构成元素，第二保护膜是湿涂聚合物膜。 碳与湿涂层聚合物膜之间的高附着力可以防止剥离，并且作为缓冲材料的湿涂聚合物膜吸收冲击。

    Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator
    7.
    发明授权
    Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
    体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器

    公开(公告)号：US07586390B2

    公开(公告)日：2009-09-08

    申请号：US11345538

    申请日：2006-02-02

    申请人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

    发明人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

    IPC分类号： H03H9/15 ,  H03H9/54 ,  H03H9/13

    CPC分类号： H03H9/02086 ,  H03H9/174 ,  H03H9/175

    摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 300 GN/m2 or more.

    摘要翻译： 具有优异弹性和高机电能量转换效率的体声波谐振器。 体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。 此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配 以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配， 为7％以下，下部电极层为弹性刚度C33的值为300Ng / m 2以上的材料。

    Catalyst structure and fuel cell having the same
    8.
    发明授权
    Catalyst structure and fuel cell having the same 有权
    催化剂结构和具有相同的燃料电池

    公开(公告)号：US07537858B2

    公开(公告)日：2009-05-26

    申请号：US10872456

    申请日：2004-06-22

    申请人： Tomio Iwasaki ,  Hideo Miura

    发明人： Tomio Iwasaki ,  Hideo Miura

    IPC分类号： H01M4/86

    CPC分类号： H01M4/926 ,  F01N3/2053 ,  F01N13/009 ,  F01N13/0093 ,  H01M4/86 ,  H01M4/8636 ,  H01M4/90 ,  H01M4/921 ,  H01M2008/1095 ,  Y02E60/324

    摘要： The present invention provides a catalyst structure of high catalytic activity and a fuel cell of high cell output. The catalyst structure comprises a conductive film and catalyst particles formed on the conductive film wherein the difference between lattice constant of a material constituting the conductive film and that of a material constituting the catalyst particles is not more than 16%, and preferably not less than 3%.

    摘要翻译： 本发明提供催化活性高的催化剂结构和高电池输出的燃料电池。 催化剂结构包括形成在导电膜上的导电膜和催化剂颗粒，其中构成导电膜的材料的晶格常数与构成催化剂颗粒的材料的晶格常数之间的差异不大于16％，优选不小于3 ％。

    Method of manufacturing a semiconductor device
    9.
    发明申请
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20080188043A1

    公开(公告)日：2008-08-07

    申请号：US12005444

    申请日：2007-12-26

    申请人： Norio Ishitsuka ,  Nobuyoshi Hattori ,  Tomio Iwasaki

    发明人： Norio Ishitsuka ,  Nobuyoshi Hattori ,  Tomio Iwasaki

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

    摘要： After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.

    摘要翻译： 在半导体衬底的主表面上形成栅电极之后，通过使用栅电极作为掩模，在半导体衬底的主表面上注入杂质，形成低浓度层。 此后，在栅电极的两个侧表面上形成第一侧壁和第二侧壁。 随后，使用第一侧壁，第二侧壁和栅电极作为掩模，将氮等离子注入到半导体衬底中，从而在半导体衬底的主表面上形成结晶化控制区域（CCR） 。 然后，在去除第二侧壁之后，在半导体衬底的主表面上形成用于源极和漏极的高浓度层。

    Semiconductor Device
    10.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20080061384A1

    公开(公告)日：2008-03-13

    申请号：US11936443

    申请日：2007-11-07

    申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

    发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

    IPC分类号： H01L29/78

    CPC分类号： H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

    摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译： 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下， 在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。