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    MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE 失效
    半导体器件的制造方法

    公开(公告)号：US20080076238A1

    公开(公告)日：2008-03-27

    申请号：US11833619

    申请日：2007-08-03

    申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    IPC分类号： H01L21/265

    CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

    摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

    摘要翻译： 提供了为了形成场阻止层（n + SUP型半导体区域）而注入的n型杂质离子进行活化退火的技术，以及用于形成 集电极区域（p + SUP +型半导体区域），以将场致发射层中的n型杂质离子的活化比调节至60％以上，p型杂质的活化率 在集电极区域的离子为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

    Manufacturing method of a semiconductor device
    4.
    发明授权
    Manufacturing method of a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07776660B2

    公开(公告)日：2010-08-17

    申请号：US11833619

    申请日：2007-08-03

    申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    IPC分类号： H01L21/332

    CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

    摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

    摘要翻译： 提供了用于形成场致发射层（n +型半导体区域）而注入的n型杂质离子的活化退火和注入用于形成集电极区域（p +型半导体区域）的p型杂质离子的活化退火的技术 ），将场致发光层中的n型杂质离子的活化比例调整为60％以上，将集电区域的p型杂质离子的活化比例调整为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

    Ultrasonic flow rate measurement device having inlet side flow rectification part and outlet side coupling part
    5.
    发明授权
    Ultrasonic flow rate measurement device having inlet side flow rectification part and outlet side coupling part 有权
    超声波流量测量装置具有入口侧流量整流部分和出口侧耦合部分

    公开(公告)号：US08984960B2

    公开(公告)日：2015-03-24

    申请号：US13821915

    申请日：2011-11-02

    申请人： Yuji Fujii ,  Yukinori Ozaki ,  Masato Satou ,  Hirokazu Gotou

    发明人： Yuji Fujii ,  Yukinori Ozaki ,  Masato Satou ,  Hirokazu Gotou

    IPC分类号： G01F1/66 ,  G01F15/18

    CPC分类号： G01F1/662 ,  G01F15/185

    摘要： Ultrasonic flow rate measurement device includes measurement flow path in which a fluid to be measured flows, and a pair of ultrasonic vibrators that are disposed in directions such that a propagation path of an ultrasonic wave forms a V-shape relative to measurement flow path. Moreover, the device includes measurement circuit which measures a flow rate of the fluid to be measured by measuring a propagation time of the ultrasonic wave between the pair of ultrasonic vibrators, and inlet-side rectification part which is disposed, in the inlet side of measurement flow path, to stabilize the flow of the fluid to be measured. Furthermore, the device includes outlet-side coupling part which is disposed in the outlet side of measurement flow path, and signal lead-out part which outputs a flow rate value measured with measurement circuit.

    摘要翻译： 超声波流量测量装置包括要测量的流体流动的测量流动路径，以及一对超声波振动器，其布置在使得超声波的传播路径相对于测量流路形成V形的方向上。 此外，该装置包括测量电路，其通过测量在一对超声波振动器之间的超声波的传播时间和设置在测量入口侧的入口侧整流部来测量待测量的流体的流量 流动路径，以稳定要测量的流体的流动。 此外，该装置包括设置在测量流路的出口侧的出口侧联接部和输出利用测量电路测量的流量值的信号导出部。

    Partition plate securement for an ultrasonic flow meter
    6.
    发明授权
    Partition plate securement for an ultrasonic flow meter 有权
    超声波流量计分隔板固定

    公开(公告)号：US08978482B2

    公开(公告)日：2015-03-17

    申请号：US13883506

    申请日：2011-11-07

    申请人： Yukinori Ozaki ,  Yuji Fujii ,  Masato Satou ,  Hirokazu Gotou ,  Aoi Watanabe

    发明人： Yukinori Ozaki ,  Yuji Fujii ,  Masato Satou ,  Hirokazu Gotou ,  Aoi Watanabe

    IPC分类号： G01F1/66

    CPC分类号： G01F1/662 ,  G01F1/66 ,  G01F1/667

    摘要： An ultrasonic flow rate measuring device includes a flow path, a partition plate that is inserted from an aperture to partition the flow path into plural sections, an ultrasound transmission body, plural ultrasonic transducers that are provided in positions facing a bottom plate such that an ultrasonic wave transmitted from one of the ultrasonic transducers through the ultrasound transmission body is reflected by the bottom plate and received by the other ultrasonic transducer, a measurement circuit that measures an ultrasonic propagation time between the plurality of the ultrasonic transducers; and a calculation circuit that obtains a flow rate of the target fluid based on a signal from the measurement circuit.

    摘要翻译： 一种超声波流量测量装置，包括流路，从孔径插入以将流路分隔成多个部分的隔板，超声波传播体，设置在面向底板的位置的超声波换能器，使得超声波 通过超声波传播体从超声波换能器中的一个传输的波被该底板反射并被另一个超声波换能器接收，该测量电路测量多个超声波换能器之间的超声波传播时间; 以及基于来自测量电路的信号获得目标流体的流量的计算电路。

    Flow rate measuring device
    9.
    发明授权
    Flow rate measuring device 有权
    流量测量装置

    公开(公告)号：US08671775B2

    公开(公告)日：2014-03-18

    申请号：US13516588

    申请日：2010-12-14

    申请人： Hirokazu Gotou ,  Aoi Watanabe ,  Yuji Fujii ,  Kouichi Takemura ,  Yuji Nakabayashi

    发明人： Hirokazu Gotou ,  Aoi Watanabe ,  Yuji Fujii ,  Kouichi Takemura ,  Yuji Nakabayashi

    IPC分类号： G01F1/66

    CPC分类号： G01F1/66

    摘要： When a flow rate is equal to or more than a reference flow rate, a reference voltage is changed to a level capable of measuring stably to thereby realize the improvement of measurement accuracy at the time of a large amount of flow rate. A flow rate determination means compares a flow rate calculated by a flow rate calculation means with the reference flow rate. When the calculated flow rate is larger than the reference flow rate, the reference voltage set by a reference voltage setting means is changed, whereby the zero cross point can be detected stably at the portion where the degree of the influence of the change in the amplitude of the received signal is small. Thus, it is possible to provide a flow rate measuring device capable of measuring a flow rate stably with high accuracy even when a fluid flow is disturbed due to a large amount of flow rate.

    摘要翻译： 当流量等于或大于参考流量时，将参考电压变为能够稳定测量的水平，从而在大量流量时实现提高测量精度。 流量确定装置将由流量计算装置计算的流量与参考流量进行比较。 当计算出的流量大于参考流量时，由参考电压设定装置设定的参考电压发生变化，从而能够在振幅变化的影响程度的部分稳定地检测零交叉点 的接收信号很小。 因此，可以提供一种流量测量装置，即使由于流量大而扰动流体流动，也能够以高精度稳定地测量流量。