公开(公告)号：US20090174061A1

公开(公告)日：2009-07-09

申请号：US12401491

申请日：2009-03-10

申请人： Yasuhiro NAKA ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

发明人： Yasuhiro NAKA ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

IPC分类号： H01L23/48 ,  H01L23/485

CPC分类号： H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.

摘要翻译： 为了防止在制造过程中由于热负荷等而在半导体器件的焊料接合焊盘中的膜剥离，由此导致剥离，可以采用衬垫结构，其中Cr膜具有良好的粘合性 在形成于硅或氧化硅膜上的Ti膜或Ti化合物膜之间插入Ti膜或Ti化合物膜和Ni膜（或Cu膜），Ni膜（或Cu膜）为 连接到焊料。 此外，为了防止在Ti膜或Ti化合物膜与氧化硅膜之间的界面处的剥离，Cr膜形成在比Ti膜或Ti化合物膜更大的面积上。

公开(公告)号：US20060043605A1

公开(公告)日：2006-03-02

申请号：US11172207

申请日：2005-06-29

申请人： Yasuhiro Naka ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

发明人： Yasuhiro Naka ,  Tomio Iwasaki ,  Hidekazu Okuda ,  Yuji Fujii

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.

摘要翻译： 为了防止在制造过程中由于热负荷等而在半导体器件的焊料接合焊盘中的膜剥离，由此导致剥离，可以采用衬垫结构，其中Cr膜具有良好的粘合性 在形成于硅或氧化硅膜上的Ti膜或Ti化合物膜之间插入Ti膜或Ti化合物膜和Ni膜（或Cu膜），Ni膜（或Cu膜）为 连接到焊料。 此外，为了防止在Ti膜或Ti化合物膜与氧化硅膜之间的界面处的剥离，Cr膜形成在比Ti膜或Ti化合物膜更大的面积上。

公开(公告)号：US20080076238A1

公开(公告)日：2008-03-27

申请号：US11833619

申请日：2007-08-03

申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

IPC分类号： H01L21/265

CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

摘要翻译： 提供了为了形成场阻止层（n + SUP型半导体区域）而注入的n型杂质离子进行活化退火的技术，以及用于形成 集电极区域（p + SUP +型半导体区域），以将场致发射层中的n型杂质离子的活化比调节至60％以上，p型杂质的活化率 在集电极区域的离子为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

公开(公告)号：US07776660B2

公开(公告)日：2010-08-17

申请号：US11833619

申请日：2007-08-03

申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

IPC分类号： H01L21/332

CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

摘要翻译： 提供了用于形成场致发射层（n +型半导体区域）而注入的n型杂质离子的活化退火和注入用于形成集电极区域（p +型半导体区域）的p型杂质离子的活化退火的技术 ），将场致发光层中的n型杂质离子的活化比例调整为60％以上，将集电区域的p型杂质离子的活化比例调整为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

公开(公告)号：US07335574B2

公开(公告)日：2008-02-26

申请号：US11100598

申请日：2005-04-07

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20100127306A1

公开(公告)日：2010-05-27

申请号：US12644376

申请日：2009-12-22

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20050233499A1

公开(公告)日：2005-10-20

申请号：US11100598

申请日：2005-04-07

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/28 ,  H01L21/304 ,  H01L21/336 ,  H01L21/44 ,  H01L21/60 ,  H01L21/68 ,  H01L29/41 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07687907B2

公开(公告)日：2010-03-30

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20110212609A1

公开(公告)日：2011-09-01

申请号：US13102666

申请日：2011-05-06

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/265

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07977165B2

公开(公告)日：2011-07-12

申请号：US12644376

申请日：2009-12-22

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/332

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。