公开(公告)号：US20070117292A1

公开(公告)日：2007-05-24

申请号：US11593552

申请日：2006-11-07

申请人： Yasukazu Kimura ,  Toshihiko Itoga ,  Takeshi Noda

发明人： Yasukazu Kimura ,  Toshihiko Itoga ,  Takeshi Noda

IPC分类号： H01L21/84 ,  H01L27/148

CPC分类号： H01L27/1281 ,  H01L27/1285 ,  H01L27/1296

摘要： The present invention provides a display-device-use substrate which is strip-crystallized while minimizing the generation of peeling of a semiconductor by suppressing the generation of aggregation at the time of crystallization due to the radiation of continuous oscillation laser beams. A silicon nitride film and a silicon oxide film which constitutes a background film are formed on a glass substrate on which projecting portions are formed, and a silicon base film is formed on the silicon nitride film and a silicon oxide film. Banks which intersect the scanning directions of laser beams are positioned below the silicon base substrate. The aggregation which is generated by the scanning of laser beams is stopped at a portion after the laser beams gets over the bank and, thereafter, the strip crystal silicon film is formed normally.

摘要翻译： 本发明提供一种显示装置用基板，其通过抑制由连续振荡激光束的辐射引起的结晶时的聚集的产生而使半导体的剥离最小化而进行带状结晶化。 在形成有突出部的玻璃基板上形成氮化硅膜和构成背景膜的氧化硅膜，在氮化硅膜和氧化硅膜上形成硅基膜。 与激光束的扫描方向相交的堤位于硅基底的下方。 通过激光扫描产生的聚集在激光束越过堤岸之后的一部分停止，此后，正常形成条状晶体硅膜。

公开(公告)号：US07407853B2

公开(公告)日：2008-08-05

申请号：US11077255

申请日：2005-03-11

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/8242

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。

公开(公告)号：US08456401B2

公开(公告)日：2013-06-04

申请号：US12222339

申请日：2008-08-07

申请人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

发明人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

IPC分类号： G09G3/36 ,  H01L31/00 ,  H01L31/036

CPC分类号： H01L29/78618 ,  G02F1/13454 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78696

摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

公开(公告)号：US20090073149A1

公开(公告)日：2009-03-19

申请号：US12222339

申请日：2008-08-07

申请人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

发明人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

IPC分类号： G09G5/00 ,  H01L29/04

CPC分类号： H01L29/78618 ,  G02F1/13454 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78696

摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

摘要翻译： 栅电极通过栅极绝缘膜形成在多晶半导体层的上方。 多晶半导体层包括在平面图中与栅电极重叠的第一区域。 第一区域夹在第二区域和第三区域之间。 多晶半导体层的第二区域包括第一杂质扩散区域和与第一杂质扩散区域相反的导电类型的两个第二杂质扩散区域。 第一区域和第一杂质扩散区域在第一边界处彼此接触。 第一区域和第二第二杂质扩散区域在第二边界处彼此接触。 夹着第一杂质扩散区的两个第二杂质扩散区沿着栅电极设置。 因此，泄漏电流被抑制。

公开(公告)号：US20080296583A1

公开(公告)日：2008-12-04

申请号：US12185292

申请日：2008-08-04

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： H01L33/00

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.

摘要翻译： 显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分 绝缘膜与一个电极重叠构成另一个电极。 导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。 绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

公开(公告)号：US20050211983A1

公开(公告)日：2005-09-29

申请号：US11077255

申请日：2005-03-11

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： G02F1/1343 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。

公开(公告)号：US20100096645A1

公开(公告)日：2010-04-22

申请号：US12579428

申请日：2009-10-15

申请人： Daisuke Sonoda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Yasukazu Kimura ,  Takeshi Kuriyagawa ,  Takeshi Noda

发明人： Daisuke Sonoda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Yasukazu Kimura ,  Takeshi Kuriyagawa ,  Takeshi Noda

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248

摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.

摘要翻译： 提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。 显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜 和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

公开(公告)号：US08325299B2

公开(公告)日：2012-12-04

申请号：US12759120

申请日：2010-04-13

申请人： Toshimasa Ishigaki ,  Yasukazu Kimura ,  Jun Fujiyoshi

发明人： Toshimasa Ishigaki ,  Yasukazu Kimura ,  Jun Fujiyoshi

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/1333 ,  G02F1/133516

摘要： The present invention provides a manufacturing method for a liquid crystal display device, wherein the liquid crystal display device comprises first and second color filters provided on the liquid crystal side of one of a pair of substrates which are positioned so as to face each other and sandwich liquid crystal in between so as to be adjacent to each other, and a first side portion of the first color filter on the second color filter side overlaps with a second side portion of the second color filter on the first color filter side, characterized in that the border between the light blocking region and the non-light blocking region in a photomask for forming the first color filter, which corresponds to the first side portion, has a zigzag pattern with repeating mountains and valleys along this border, and the border between the light blocking region and the non-light blocking region in a photomask for forming the second color filter, which corresponds to the second side portion, has a zigzag pattern with repeating mountains and valleys along this border.

摘要翻译： 本发明提供了一种液晶显示装置的制造方法，其中液晶显示装置包括设置在一对基板中的一个基板的液晶侧的第一和第二滤色器，它们彼此面对并夹在 液晶彼此相邻，并且第二滤色器侧的第一滤色器的第一侧部与第一滤色器侧的第二滤色器的第二侧部重叠，其特征在于， 与第一侧部对应的用于形成第一滤色器的光掩模中的遮光区域与非遮光区域之间的边界具有沿该边界重复山脉和山谷的锯齿形图案， 用于形成与第二侧部对应的第二滤色器的光掩模中的遮光区域和非遮光区域具有 沿着这个边界重复山脉和山谷的曲折图案。

公开(公告)号：US20120105778A1

公开(公告)日：2012-05-03

申请号：US13277262

申请日：2011-10-20

申请人： Jun FUJIYOSHI ,  Yasukazu Kimura ,  Hideo Tanabe ,  Masataka Okamoto ,  Hidekazu Miyake

发明人： Jun FUJIYOSHI ,  Yasukazu Kimura ,  Hideo Tanabe ,  Masataka Okamoto ,  Hidekazu Miyake

IPC分类号： G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/133305 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/1368

摘要： A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.

摘要翻译： 液晶显示装置包括第一基板和其间具有液晶层的第二基板。 第一衬底包括漏极线，栅极线，向像素电极输出信号的薄膜晶体管，以及形成在每个薄膜晶体管和每个像素电极之间的有机膜。 有机膜具有用于在每个薄膜晶体管的源电极和每个像素电极之间进行电连接的接触孔。 在有机膜下面的层和朝向薄膜晶体管的有机膜的边缘部分形成台阶，形成接触孔的边缘部分位于台阶的下平面上。 形成在有机膜中的接触孔的侧壁部形成为具有至少60度的锥角。

公开(公告)号：US09206036B2

公开(公告)日：2015-12-08

申请号：US13478147

申请日：2012-05-23

申请人： Jun Fujiyoshi ,  Yasukazu Kimura

发明人： Jun Fujiyoshi ,  Yasukazu Kimura

IPC分类号： G02B26/00 ,  G02F1/03 ,  G02F1/07 ,  B81C1/00 ,  G02B26/02

CPC分类号： B81C1/00182 ,  B81B2201/045 ,  B81C2203/054 ,  G02B26/02

摘要： A cut which penetrates a resin layer is formed in the resin layer such that the cut surrounds a third upper surface. A film is formed such that the film covers the whole resin layer except for a bottom surface of the resin layer inside the cut and at least a portion of the resin layer is exposed outside the cut. The resin layer which is wholly covered with the film is left inside the cut, and the whole resin layer continuously formed with a surface exposed from the film is removed outside the cut. A bump is formed by the resin layer and the film inside the cut, and a shutter and at least a portion of a drive part are formed by the film outside the cut in a state where these parts are floated from a first substrate.

摘要翻译： 在树脂层中形成穿过树脂层的切口，使得切口围绕第三上表面。 形成膜，使得膜覆盖除了切口内部的树脂层的底表面以外的整个树脂层，并且至少一部分树脂层露出切口外。 完全被膜覆盖的树脂层留在切口内，并且在切割外面除去连续形成有从膜暴露的表面的整个树脂层。 通过树脂层和切口内的膜形成凸块，并且在这些部件从第一基板浮起的状态下，通过切口外部的薄膜形成活门和驱动部分的至少一部分。