公开(公告)号：US08437584B2

公开(公告)日：2013-05-07

申请号：US12844452

申请日：2010-07-27

申请人： Yasunobu Matsuoka ,  Toshiki Sugawara ,  Koichiro Adachi ,  Naoki Matsushima ,  Saori Hamamura ,  Madoka Minagawa ,  Norio Chujo

发明人： Yasunobu Matsuoka ,  Toshiki Sugawara ,  Koichiro Adachi ,  Naoki Matsushima ,  Saori Hamamura ,  Madoka Minagawa ,  Norio Chujo

IPC分类号： G02B6/26 ,  G02B6/42

CPC分类号： G02B6/43 ,  G02B6/4214 ,  G02B6/423 ,  H01S5/423 ,  Y10T29/49117

摘要： In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.

摘要翻译： 在制造光学I / O阵列模块时，在衬底上形成具有锥面的镜部分的光波导，凸形或凹形的部件位于 光波导，激光二极管阵列和具有凹形或凸形的光电二极管阵列在安装之前与凸形构件或凹形构件配合或配合。 此外，形成有多个膜层，其上集成有光学元件的驱动器IC LSI和光学元件的放大器LSI的LSI。

公开(公告)号：US20110026878A1

公开(公告)日：2011-02-03

申请号：US12844452

申请日：2010-07-27

申请人： Yasunobu MATSUOKA ,  Toshiki Sugawara ,  Koichiro Adachi ,  Naoki Matsushima ,  Saori Hamamura ,  Madoka Minagawa ,  Norio Chujo

发明人： Yasunobu MATSUOKA ,  Toshiki Sugawara ,  Koichiro Adachi ,  Naoki Matsushima ,  Saori Hamamura ,  Madoka Minagawa ,  Norio Chujo

IPC分类号： G02B6/12 ,  G02B6/30 ,  H01R43/00

CPC分类号： G02B6/43 ,  G02B6/4214 ,  G02B6/423 ,  H01S5/423 ,  Y10T29/49117

摘要： In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.

摘要翻译： 在制造光学I / O阵列模块时，在衬底上形成具有锥面的镜部分的光波导，凸形或凹形的部件位于 光波导，激光二极管阵列和具有凹形或凸形的光电二极管阵列在安装之前与凸形构件或凹形构件配合或配合。 此外，形成有多个膜层，其上集成有光学元件的驱动器IC LSI和光学元件的放大器LSI的LSI。

公开(公告)号：US08406581B2

公开(公告)日：2013-03-26

申请号：US13382459

申请日：2010-06-02

申请人： Saori Hamamura ,  Naoki Matsushima ,  Madoka Minagawa ,  Satoshi Kaneko ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Tsutomu Kono

发明人： Saori Hamamura ,  Naoki Matsushima ,  Madoka Minagawa ,  Satoshi Kaneko ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Tsutomu Kono

IPC分类号： G02B6/12

CPC分类号： G02B6/4201 ,  G02B6/424 ,  G02B6/4244 ,  G02B6/4246 ,  G02B6/4257 ,  G02B6/428 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/3512 ,  Y10T29/49146

摘要： A photoelectric composite wiring module, being superior in performances and mass-productivity thereof, and a transmission apparatus of applying that therein are provided.Optical devices 2a and 2b are disposed on a circuit board 1, so that they are optically coupled with optical guides 11 formed on the circuit board 1, wherein a filet-like resin is formed on a side surface of a bump, which is formed on side surfaces or/and upper portions of the optical devices, on an upper layer thereof being compressed a resin film to be adhered thereon, thereby forming an insulation film 31, and an electric wiring layer 3 is laminated, so that the electrodes of the optical devices 2 and wirings of the electric wiring layer are electrically connected with, and further thereon is mounted a semiconductor element 4; thereby obtaining the structure for brining the transmission speed to be high per channel, and for preventing the power consumption from increasing. Also, it has the structure of not causing deterioration of the optical devices due to ill influences of moisture, thereby achieving high reliability. Further, it also produces an easy connecting method with a transmission apparatus, and high productivity thereof.

摘要翻译： 提供了一种性能优良，批量生产率高的光电复合布线模块以及其中应用的发送装置。 光学器件2a和2b设置在电路板1上，使得它们与形成在电路板1上的光导11光学耦合，其中在凸起的侧表面上形成file状树脂，其形成在 光学元件的侧表面或/或上部在其上层被压缩以粘附在其上的树脂膜，从而形成绝缘膜31，并且层叠电布线层3，使得光学器件的电极 器件2和布线层的布线电连接，并且其上安装有半导体元件4; 从而获得用于使传输速度提高到每个通道高的结构，并且用于防止功耗增加。 此外，其具有不会由于湿气的不良影响而导致光学元件劣化的结构，从而实现高可靠性。 此外，它还产生与传动装置的简单连接方法，并且其生产率高。

公开(公告)号：US08401347B2

公开(公告)日：2013-03-19

申请号：US12623686

申请日：2009-11-23

申请人： Naoki Matsushima ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Madoka Minagawa ,  Saori Hamamura ,  Satoshi Kaneko ,  Tsutomu Kono

发明人： Naoki Matsushima ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Madoka Minagawa ,  Saori Hamamura ,  Satoshi Kaneko ,  Tsutomu Kono

IPC分类号： G02B6/12

CPC分类号： G02B6/4214 ,  H05K1/0274 ,  H05K1/185 ,  H05K3/4602 ,  H05K3/4644

摘要： A photoelectric composite wiring module includes a circuit substrate, an optical device, an LSI (device) having a driver and an amplifier for the optical device, and a thin film wiring layer having an electrical wiring. The optical device is connected with the LSI by means of the electrical wiring. The optical device is formed on the circuit substrate and optically coupled to an optical waveguide formed in the circuit substrate. The thin film wiring layer is formed on the optical device to ensure that the optical device is electrically connected with the electrical wiring of the thin film wiring layer. The LSI is mounted on and electrically connected with the thin film wiring layer.

摘要翻译： 光电复合布线模块包括电路基板，光学装置，具有用于光学装置的驱动器和放大器的LSI（器件）以及具有电布线的薄膜布线层。 光学器件通过电线与LSI连接。 光学器件形成在电路基板上，并且光耦合到形成在电路基板中的光波导。 在光学器件上形成薄膜布线层，以确保光学器件与薄膜布线层的电气布线电连接。 LSI与薄膜布线层安装在电连接上。

公开(公告)号：US20120128292A1

公开(公告)日：2012-05-24

申请号：US13382459

申请日：2010-06-02

申请人： Saori Hamamura ,  Naoki Matsushima ,  Madoka Minagawa ,  Satoshi Kaneko ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Tsutomu Kono

发明人： Saori Hamamura ,  Naoki Matsushima ,  Madoka Minagawa ,  Satoshi Kaneko ,  Norio Chujo ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Tsutomu Kono

IPC分类号： G02B6/12 ,  H01L33/48

CPC分类号： G02B6/4201 ,  G02B6/424 ,  G02B6/4244 ,  G02B6/4246 ,  G02B6/4257 ,  G02B6/428 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/3512 ,  Y10T29/49146

摘要： A photoelectric composite wiring module, being superior in performances and mass-productivity thereof, and a transmission apparatus of applying that therein are provided.Optical devices 2a and 2b are disposed on a circuit board 1, so that they are optically coupled with optical guides 11 formed on the circuit board 1, wherein a filet-like resin is formed on a side surface of a bump, which is formed on side surfaces or/and upper portions of the optical devices, on an upper layer thereof being compressed a resin film to be adhered thereon, thereby forming an insulation film 31, and an electric wiring layer 3 is laminated, so that the electrodes of the optical devices 2 and wirings of the electric wiring layer are electrically connected with, and further thereon is mounted a semiconductor element 4; thereby obtaining the structure for brining the transmission speed to be high per channel, and for preventing the power consumption from increasing. Also, it has the structure of not causing deterioration of the optical devices due to ill influences of moisture, thereby achieving high reliability. Further, it also produces an easy connecting method with a transmission apparatus, and high productivity thereof.

摘要翻译： 提供了一种性能优良，批量生产率高的光电复合布线模块以及其中应用的发送装置。 光学器件2a和2b设置在电路板1上，使得它们与形成在电路板1上的光导11光学耦合，其中在凸起的侧表面上形成file状树脂，其形成在 光学元件的侧表面或/或上部在其上层被压缩以粘附在其上的树脂膜，从而形成绝缘膜31，并且层叠电布线层3，使得光学器件的电极 器件2和布线层的布线电连接，并且其上安装有半导体元件4; 从而获得用于使传输速度提高到每个通道高的结构，并且用于防止功耗增加。 此外，其具有不会由于湿气的不良影响而导致光学元件劣化的结构，从而实现高可靠性。 此外，它还产生与传动装置的简单连接方法，并且其生产率高。

公开(公告)号：US08300503B2

公开(公告)日：2012-10-30

申请号：US12997201

申请日：2009-06-03

申请人： Satoshi Arai ,  Naoki Matsushima ,  Irizo Naniwa ,  Junichiro Shimizu

发明人： Satoshi Arai ,  Naoki Matsushima ,  Irizo Naniwa ,  Junichiro Shimizu

IPC分类号： G11B11/10

CPC分类号： G11B5/314 ,  G11B5/4833 ,  G11B5/4866 ,  G11B2005/0005 ,  G11B2005/0021

摘要： In a thermally assisted magnetic recording head having a light source and a waveguide to lead a laser beam radiated from the light source to a front end of the magnetic head, while blocking an adverse effect of heat generated in the light source and securing a good floating characteristic, the light source and the magnetic head are optically coupled with high efficiency and the magnetic head itself is reduced in size. This invention provides a reflection mirror that is formed of a part or whole of one inclined end surface of the semiconductor laser mounted on the first submount. Near one end surface of the slider is provided the optical waveguide that pierces through the slider in a direction of the thickness thereof. The slider is mounted on the second submount and the positions of the first submount and the second submount are adjusted to practically align the light axis of the beam emitted from the mirror with the light axis of the optical waveguide, thereby realizing a novel thermally assisted magnetic recording head.

摘要翻译： 在具有光源和波导的热辅助磁记录头中，将从光源辐射的激光束引导到磁头的前端，同时阻挡在光源中产生的热的不利影响并确保良好的浮动 特性，光源和磁头的光学耦合效率高，磁头本身尺寸减小。 本发明提供一种由安装在第一基座上的半导体激光器的一个倾斜端面的一部分或全部形成的反射镜。 在滑块的一个端面附近设置有穿过滑块的厚度方向的光波导。 滑块安装在第二基座上，并且调整第一基座和第二基座的位置以实际地将从反射镜发射的光束的光轴与光波导的光轴对准，从而实现新颖的热辅助磁 录音头。

公开(公告)号：US08110907B2

公开(公告)日：2012-02-07

申请号：US12318798

申请日：2009-01-08

申请人： Masahiro Yamaguchi ,  Emi Sawayama ,  Hiroshi Oyama ,  Shigeharu Tsunoda ,  Yasuo Amano ,  Naoki Matsushima

发明人： Masahiro Yamaguchi ,  Emi Sawayama ,  Hiroshi Oyama ,  Shigeharu Tsunoda ,  Yasuo Amano ,  Naoki Matsushima

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/5387 ,  H01L24/48 ,  H01L24/50 ,  H01L24/93 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/78313 ,  H01L2225/06579 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor chip, a first substrate, and a second substrate. The first substrate includes a plurality of wires and a plurality of first electrodes, each first electrode being connected with each wire. The second substrate includes the semiconductor chip that is mounted thereon, and a plurality of second electrodes with, each second electrode being connected with the each first electrode of the first substrate. The widths of the wires of the first substrate are different depending on the lengths of the wires. By changing the widths of the wires depending on their lengths, it is possible to reduce variation in stiffness of the electrodes and vicinities of electrodes, whereby variation in ultrasonic bonding strength can be reduced.

摘要翻译： 半导体器件包括半导体芯片，第一基板和第二基板。 第一基板包括多个导线和多个第一电极，每个第一电极与每个导线连接。 第二基板包括安装在其上的半导体芯片，以及多个第二电极，每个第二电极与第一基板的每个第一电极连接。 第一基板的导线的宽度根据导线的长度而不同。 通过根据其长度改变电线的宽度，可以减少电极的刚度变化和电极附近，从而可以降低超声波接合强度的变化。

公开(公告)号：US07842889B2

公开(公告)日：2010-11-30

申请号：US12352631

申请日：2009-01-13

申请人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

发明人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

IPC分类号： H01L23/49 ,  H05K5/06

CPC分类号： H01L24/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L23/4985 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3426 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

摘要翻译： 本发明的特征在于具有基板1和形成在基板1上的金属化层2的结构，在其上形成有Sn焊料膜3和Ag膜4。 Ag膜4是在室温下在大气中不氧化的金属。 在湿法中，由于仅通过Ag和Sn的电池反应使Sn焊料膜3的露出侧被氧化，否则会影响连接的焊料膜上的Ag膜4的上表面不被氧化 。 由于Ag膜4在Sn焊料膜3熔化的同时熔融而成为Sn焊料，所以Ag膜4不妨碍连接。

公开(公告)号：US20090206492A1

公开(公告)日：2009-08-20

申请号：US12318798

申请日：2009-01-08

申请人： Masahiro Yamaguchi ,  Emi Sawayama ,  Hiroshi Oyama ,  Shigeharu Tsunoda ,  Yasuo Amano ,  Naoki Matsushima

发明人： Masahiro Yamaguchi ,  Emi Sawayama ,  Hiroshi Oyama ,  Shigeharu Tsunoda ,  Yasuo Amano ,  Naoki Matsushima

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/5387 ,  H01L24/48 ,  H01L24/50 ,  H01L24/93 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/78313 ,  H01L2225/06579 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor chip, a first substrate, and a second substrate. The first substrate includes a plurality of wires and a plurality of first electrodes, each first electrode being connected with each wire. The second substrate includes the semiconductor chip that is mounted thereon, and a plurality of second electrodes with, each second electrode being connected with the each first electrode of the first substrate. The widths of the wires of the first substrate are different depending on the lengths of the wires. By changing the widths of the wires depending on their lengths, it is possible to reduce variation in stiffness of the electrodes and vicinities of electrodes, whereby variation in ultrasonic bonding strength can be reduced.

摘要翻译： 半导体器件包括半导体芯片，第一基板和第二基板。 第一基板包括多个导线和多个第一电极，每个第一电极与每个导线连接。 第二基板包括安装在其上的半导体芯片，以及多个第二电极，每个第二电极与第一基板的每个第一电极连接。 第一基板的导线的宽度根据导线的长度而不同。 通过根据其长度改变电线的宽度，可以减少电极的刚度变化和电极附近，从而可以降低超声波接合强度的变化。

公开(公告)号：US20090126991A1

公开(公告)日：2009-05-21

申请号：US12352631

申请日：2009-01-13

申请人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

发明人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

IPC分类号： H01L23/495 ,  H05K1/00

CPC分类号： H01L24/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L23/4985 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3426 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

摘要翻译： 本发明的特征在于具有基板1和形成在基板1上的金属化层2的结构，在其上形成有Sn焊料膜3和Ag膜4。 Ag膜4是在室温下在大气中不氧化的金属。 在湿法中，由于仅通过Ag和Sn的电池反应使Sn焊料膜3的露出侧被氧化，否则会影响连接的焊料膜上的Ag膜4的上表面不被氧化 。 由于Ag膜4在Sn焊料膜3熔化的同时熔融而成为Sn焊料，所以Ag膜4不妨碍连接。