摘要:
An image formation apparatus which includes an image formation unit for performing image formation by developing a latent image formed on an image support body in a printing job with use of a development unit and by transferring the developed image onto a fed recording medium, a collection unit for collecting a residual development agent on the image support body into the development unit, a detection unit for detecting a density of the image formed on the image support body, and a control unit for causing the collection unit to perform the residual development agent collection operation, according to the number of image formation of which image density detected by the detection unit exceeds a predetermined image density is provided.
摘要:
A method of controlling communication in a communication system includes a plurality of communication devices and a controller that transmits multi-channel data to the plurality of communication devices, executed in a communication device group to which power is supplied without passing through the controller, the method comprising the steps of determining a master communication device in the communication device group that sends the multi-channel data received wirelessly from the controller to other communication device included in the communication device group, according to wireless connection conditions between the controller and each communication device included in the communication device group, and sending, by the master via a wired connection, the multi-channel data received wirelessly from the controller to the other communication device included in the communication device group.
摘要:
A balloon cover 1 for contracting a once expanded balloon 4 in a balloon catheter which is provided with a compressible cover 2 as an inner tube to receive the balloon 4 and with an outer sheath 3 as an outer tube to receive the compressible cover 2, wherein an inner diameter of the compressible cover 2 has a diameter such that the expanded balloon 4 is contracted therein to make a smaller profile, and an inner diameter of the outer sheath 3 is smaller than an outer diameter of said compressible cover 2, and wherein the balloon cover 1 comprises a primary reducing function that the cover 2 receives the once expanded balloon 4 therein, and a secondary reducing function that the outer sheath 3 receives the compressible cover 2 therein and decreases the diameter of the compressible cover 2 including balloon 4 therein.
摘要:
The present invention provides a column-and-beam join structure which absorbs energy caused by a large earthquake or the like by split tees surely yielding at a prescribed value, does not cause other members to fracture, and thus makes it possible to replace only the split tees which have become unusable, and, more specifically, a column-and-beam join structure constructed by attaching and connecting, using bolts 9, the ends 8a of both the upper and lower flanges 8 of a steel beam (H-shaped steel beam) 7 between the webs 6 of a pair of upper and lower split tees 4 the flanges 5 of which are connected to a steel column 1 using bolts 3. The upper limit of the yield stress of the steel material used for the split tees 4 is defined to be not more than twice the lower limit thereof. Further, in order for the web 6 extending from the flange 5 of a split tee 4 in the axial direction of an H-shaped steel beam 7 to absorb earthquake energy by its plasticization, the cross-sectional area of the web 6 is reduced partially and the base end portion 6a of the web 6 is divided from the tip portion 6b which is connected to the flange 8 of the H-shaped steel beam 7.
摘要:
A silicon substrate is prepared by furnishing a silicon substrate (10) having a step (11) of at least 5 &mgr;m high on one surface, forming by high pressure heat oxidation an oxide film (12) which is thinner than the step, and removing the oxide film on the higher surface region until the silicon surface is exposed in the higher surface region while leaving the oxide film on the lower surface region. Because of excellent electrical properties, minimized warpage, a substantially constant oxygen concentration, and a definitely ascertainable oxide-silicon boundary, the silicon substrate is suitable for use in optical waveguide devices.
摘要:
An organic substance can be separated or concentrated by pervaporation or vapor permeation with a selective separation membrane comprising a polyparabanic acid consisting of recurring units of the general formula: ##STR1## wherein R represents a divalent organic group, a blend of the polyparabanic acid with a polymer having sulfonic acid groups, or a polyparabanic acid having sulfonic acid groups and mainly comprising recurring units of the above general formula (I).
摘要:
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要:
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要:
A class D amplification device that prevents beats caused by switching operations of a switching power supply and a class D amplifier from causing noise within a voice band, enables easy control over power supply operations, and offers low power loss is provided. The amplification device includes a unit that generates a reference clock, a switching power supply that operates at a first frequency at which the frequency of the reference clock is divided, and a triangular wave generation unit that operates at a second frequency higher than the first frequency at which the frequency of the reference clock is divided. The amplification device further includes a class D amplifier that performs a switching operation with a pulse whose width has been modulated according to the input signal.
摘要:
A joint structure includes a splice plate and a gusset plate, which can prevent out-of-plane buckling of the gusset plate without the necessity of welding a stiffening rib plate thereon. The joint structure includes a gusset plate and at least one splice plate connected to the gusset plate. Each of the splice plates is constructed from section steel having a non-rectangular cross-section. The joint structure can be used in a building during assembly of the building or for reinforcement of the building.